权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

MBE growth of a semiconductin gmaterial for blue light lasers

用于蓝光激光器的半导体材料的 MBE 生长

基本信息

批准号：
61460125
负责人：
SARAIE Junji
金额：
$ 3.9万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460125/
关键词：
ZnSSe mixed crystal Lattice-matching GaAs substrate Nitrogen doping MBE 短波長半導体レーザ材料

项目摘要

We present the optimum growth conditions of lattice-matched ZnSxSel-x by MBE on (100)GaAs substrates. Surface morphology, X-ray diffraction and photoluminescence were investgated, and the optimum growth conditions were revealed as follows: The molecular beam intensity ratio of the group VI to II element is around 2.0 and the substrate temperature is 340゜C. The molecular beam retio means that the surface coverage fraction of the group VI and group II atoms are the same during growth. It is shown by comparing the photoluminescence spectra that the quality of the ZnS_xSe_<l-x> epilayers was higher than that of ZnSe.Nitrogen doped ZnS_xSe_<l-x> epilayers were grown on GaAs substrates using NH_3 as a doping gas. These layers were characterized mainly by photoluminescence. Exciton emissions bound to a neutral acceptor(^1_) were strongly observed in N-doped ZnSe. The acceptor level was determined to be 110meV by using Haynes' rule. The same value was obtained from the FA emission energy. We also observed the I^S_ emissions in lattice-matched ZnS_xSe_<l-x> epilayers, slthough these emissions were not the main emissions in the exciton emission region. The acceptor level was determined to be about 117 meV from the FA emission energy of ZnS_xSe_<l-x>:N. The FA emission intensities at 60K were proportionaly increased with increasing the NH_3 source supply. We attempted to increase the doping efficiency by cracking the NH_3.gas. The efficiencies slightly increased at around the cracking temperature of 300゜C, but the drastic improvement was not achieved. Morphologies and crystallinities of both N-doped ZnSe and ZnS_xSe_<l-x> were excellent and no deterioration due to N-doping was found.

我们提出了MBE在（100）GaAs衬底上生长晶格匹配ZnSxSel-x的最佳条件。通过对表面形貌、x射线衍射和光致发光的研究，得出了最佳生长条件：VI族元素与II族元素的分子束强比约为2.0，衬底温度为340 C。分子束比意味着在生长过程中，VI族和II族原子的表面覆盖分数是相同的。光致发光光谱比较表明，ZnS_xSe_<l-x>薄膜的质量高于ZnSe薄膜。以NH_3为掺杂气体，在GaAs衬底上生长了氮掺杂ZnS_xSe_<l-x>薄膜。这些层的主要特征是光致发光。在n掺杂的ZnSe中，可以观察到与中性受体（^1_）结合的激子发射。采用Haynes规则确定受体能级为110meV。从FA发射能量得到了相同的值。我们还在晶格匹配的ZnS_xSe_<l-x>薄膜中观察到I^S_发射，尽管这些发射不是激子发射区的主要发射。由ZnS_xSe_<l-x>:N的FA发射能确定受体能级约为117 meV。在60K时，随着NH_3源供给的增加，FA的发射强度呈比例增加。我们试图通过裂解nh_3气体来提高掺杂效率。在300℃左右的裂解温度下，效率略有提高，但没有实现显著改善。n掺杂ZnSe和ZnS_xSe_<l-x>的形貌和结晶度都很好，没有发现n掺杂导致的劣化。