Study of p-n Junction Tunnel Emitter for Vacuum Integrated Circuits.

真空集成电路p-n结隧道发射极的研究。

• 批准号: 01550305
• 负责人: USAMI Kouichi
• 金额: $ 1.41万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550305/
• 关键词: Vacuum Integrated Circuits; Vacuum Microelectronic Tube; Cold Emitter; Tunnel Emitter; Tunnel Effect; Electron Emission; Semiconductor Thin Film; Bias Sputtering; 真空管; パイアススパッタリング

The tunnel emitter is expected to have very promising characteristics as a cathode of vacuum tubes ; because its higher emission density, lower noise temperature, higher reliability and so on, compared with those of usual thermal cathods. In this research, we have tried to fabricate p-n and MIS type micron size tunnel emitter array on Si substrate for the application to vacuum microelectronic tube. Design, fabrication and characterization of the tunnel emitter array were performed. The results were as follows ;(1) Semiconductor film deposition on Si substrate for p-n junction tunnel emitterSemiconductor (Ge) films were deposited by DC bias sputtering system. The electrical properties of the films were investigated as a function of target voltage and sputtering gas pressure. Film properties were improved with increasing ratio of Ar gas pressure to target voltage. From these results, it is considered that by increasing the Ar gas pressure to target voltage ratio i, e. decrease of sputter … More ing energy, the defects which are due to the hish energy particles from the target are decreased and the electrical properties of the films are improved. By using this system at low energy sputtering conditions, Ge films were deposited on Si (100) substrates. The RHEED patterns showed that the films were not single crystal but polycrystal.(2) Design and fabrication of MIS tunnel emitter arrayTunnel current distribution of a emitter element was calculated as a function of element size. From the results of calculation, maximum element size was decided. Experimental arrays including 10 X 10 elements (60mum dia. each) on Si (100) substrate have been prepared by using conventional photo-lithography. Electrical characteristics of the array were measured and the results were systematically related to the fabrication conditions.(3) Vacuum system for tunnel emission measurementVacuum system for the measurement of tunnel emission current and electron energy distribution was fabricated with a turbo molecular pump and a stainless steel chamber. The background pressure of this system was <1 10^<-5>Pa. Less

隧道发射极作为真空管阴极具有很好的应用前景。由于其发射密度高，噪声温度低，可靠性高等特点，与一般的热阴极相比。在本研究中，我们尝试在Si衬底上制作p-n和MIS型微米尺寸隧道发射极阵列，用于真空微电子管。对隧道发射极阵列进行了设计、制造和表征。实验结果如下：(1)在p-n结隧道发射器的Si衬底上沉积半导体薄膜采用直流偏压溅射系统沉积半导体（Ge）薄膜。研究了薄膜的电学性能随靶电压和溅射气体压力的变化规律。随着氩气压力与靶电压之比的增大，膜的性能得到改善。结果表明，提高氩气压力与靶电压之比i，即降低溅射能量，可以减少靶高能粒子产生的缺陷，提高薄膜的电性能。利用该系统在低能溅射条件下，在Si（100）衬底上沉积了Ge薄膜。RHEED图谱显示薄膜不是单晶而是多晶。(2) MIS隧道发射极阵列的设计与制作，计算了发射极单元的隧道电流分布随单元尺寸的变化规律。根据计算结果，确定了最大单元尺寸。实验阵列包括10 × 10个元素（60mum直径）。在Si（100）衬底上用传统的光刻技术制备了每一个)。对阵列的电特性进行了测量，结果与制作条件有系统的关系。(3)隧道发射测量真空系统采用涡轮分子泵和不锈钢腔体，制作了隧道发射电流和电子能量分布测量真空系统。该系统的背景压力<1 10^<-5>Pa。少

项目成果

宇佐美 興一: "バイアススパッタリング法によるSi基板上へのGe膜の形成" 真空協会誌「真空」.

宇佐美浩一：“通过偏压溅射法在硅基板上形成Ge膜”真空协会杂志“真空”。

Kouichi Usami,et.al: "Formation of Thin Si Oxide Films Prepared by Hollow Discharge Plasma Oxidation"

Kouichi Usami 等人：“通过空心放电等离子体氧化制备薄硅氧化物薄膜的形成”

宇佐美 興一: "低エネルギ-酸素イオンビ-ムを用いたn型Si(100)基板上への薄いSi酸化膜の形成" 「真空」. 第35巻. 8-14 (1992)

Koichi Usami：“使用低能氧离子束在 n 型 Si(100) 衬底上形成薄硅氧化物薄膜”，《真空》，第 35 卷，8-14 (1992)。

宇佐美 興一: "低エネルギ-酸素イオンビ-ム源を用いた薄いSi酸化膜の形成" 真空協会誌「真空」.

Koichi Usami：“使用低能氧离子束源形成薄硅氧化膜”真空协会期刊“真空”。

宇佐美興一: "低エネルギ-酸素イオン源とトンネルエミッタ用絶縁膜の形成" 真空協会誌「真空」.

宇佐美浩一：《低能量——隧道发射器用氧离子源和绝缘膜的形成》真空协会期刊《真空》。