Fabrication of miniature cathode-ray-tube for flat panel image display by using MIS tunnel emitter.

使用 MIS 隧道发射器制造用于平板图像显示的微型阴极射​​线管。

• 批准号: 13650372
• 负责人: USAMI Kouichi
• 金额: $ 2.3万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650372/
• 关键词: cold cathode; miniature electron source; tunnel emitter; electron emission; emission array; image display; plasma oxidation; Si oxide; 発光素子; トンネルエミツッタ; S_i酸化膜

MIS (Metal-Insulator-Semiconductor) type electron emitter was fabricated and, the applicability of the emitter to the miniature cathode-ray-tube was investigated. The results are as follows.(1)Si oxide films in the thickness range of 10-35 nm for the tunneling electron emitter were grown on the n-type Si(100) subtractes by an inductive coupled RF plasma oxidation system. The oxide surface morphology and the oxide stoichiometry of grown films were characterized by the AFM and the XPS, respectively. The grown films were relatively flat and consisted of SiO_2 and Si sub-oxide.(2)On the oxide film, a thin Au counter electrode, with the thickness of 10nm was deposited and the electron emitter was fabricated. The electrical properties of emitters, such as current-voltage and electron emission characteristics were measured in a high vacuum of 10^<-5>Pa The maximum emission current for the sample having 1 mm^2 emission area was 5.8 μA at the diode voltage of 18V and the transfer ratio (emission current/diode current) exceeded 2.4%.(3)A miniature cathode-ray-tube configuration was fabricated by using the emitter. The acceleration voltage was set to be 0.5kV-2.5kV, and the luminescence of ZnS ・ Cu ・Al fluorescent on an ITO glass was observed in the vacuum.

制作了MIS（金属-绝缘体-半导体）型电子发射器，并研究了该发射器在微型阴极射​​线管中的适用性。主要研究结果如下：(1)采用电感耦合射频等离子体氧化系统在n型Si(100)衬底上生长了厚度为10-35 nm的隧道电子发射体Si氧化膜。生长薄膜的氧化物表面形貌和氧化物化学计量分别通过 AFM 和 XPS 进行表征。生长的薄膜较平坦,由SiO_2和Si低氧化物组成。(2)在氧化膜上沉积厚度为10nm的薄Au对电极并制作电子发射器。在10^-5Pa的高真空中测量了发射器的电特性，如电流-电压和电子发射特性。对于具有1mm^2发射面积的样品，在二极管电压为18V时最大发射电流为5.8μA，传输比(发射电流/二极管电流)超过2.4%。(3)使用 发射器。将加速电压设定为0.5kV～2.5kV，在真空中观察ITO玻璃上的ZnS·Cu·Al荧光体的发光。