Fabrication of miniature cathode-ray-tube for flat panel image display by using MIS tunnel emitter.

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MIS (Metal-Insulator-Semiconductor) type electron emitter was fabricated and, the applicability of the emitter to the miniature cathode-ray-tube was investigated. The results are as follows.(1)Si oxide films in the thickness range of 10-35 nm for the tunneling electron emitter were grown on the n-type Si(100) subtractes by an inductive coupled RF plasma oxidation system. The oxide surface morphology and the oxide stoichiometry of grown films were characterized by the AFM and the XPS, respectively. The grown films were relatively flat and consisted of SiO_2 and Si sub-oxide.(2)On the oxide film, a thin Au counter electrode, with the thickness of 10nm was deposited and the electron emitter was fabricated. The electrical properties of emitters, such as current-voltage and electron emission characteristics were measured in a high vacuum of 10^<-5>Pa The maximum emission current for the sample having 1 mm^2 emission area was 5.8 μA at the diode voltage of 18V and the transfer ratio (emission current/diode current) exceeded 2.4%.(3)A miniature cathode-ray-tube configuration was fabricated by using the emitter. The acceleration voltage was set to be 0.5kV-2.5kV, and the luminescence of ZnS ・ Cu ・Al fluorescent on an ITO glass was observed in the vacuum.