Improvement of electron emission efficiency for MIS type tunnel emitter using crystalline insulator film.
Improvement of electron emission efficiency for MIS type tunnel emitter using crystalline insulator film.
批准号:
06650387
负责人:
USAMI Kouichi
金额:
$1.15万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Tunnel emitter is expected as a miniature cold cathode in a micron scale vacuum tube integrated circuit. Then, many researchers have been studied the fabrication and operation of MIM or MIS tunnel emitter so far. But in these cases, amorphous oxide insulator films have been commonly used as the tunnel barrier layr. On the other hand, alkaline-earth fluoride films can be hetero-epitaxially grown on Si substrate and they have superior electrical properties as insulator film. In this experiment, in order to improve the efficiency of MIS tunnel emitter, BaF_2 film on a n-type Si (111) substrate was used as a crystalline tunnel barrier insulator. The experimental results of this study are as follows,(1) The BaF_2 films were deposited on the chemically cleaned n-type Si (111) substrates for various substrate temperature by vacuum evaporation technique. The crystallographic quality and surface morphology of the films were investigated by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively. The crystallinity of the BaF_2 film improed as a increase of deposition temperature T_S in the range from room temperature tp 700゚C.The (111) oriented crystal growth were observed above 400゚C by XRD measurement.(2) A 10nm thick and 1mm width Au counter electrode was deposited across the 1mm width BaF_2 insulator strip which was trimmed by SiO_2 insulator, and hence a cross type MIS diode which have 1mm*1mm emission area was fabricated. The I-V characteristics of MIS diodes for various BaF_2 deposition temperature were measured. Diode current break voltage increased with increasing BaF_2 deposition temperature T_S.(3) The electron emission of the tunnel emitter which was fabricated on the smooth and having good crystallinity BaF_2 film deposited at T_S=700゚C was measured. Pico-Ampere/mm^2 order electron emission current density into the vacuum (where, BaF_2 thickness was 120nm and diode voltage V_d=5V) was obtained.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
K.Usami: "Preparation of BaF_2 thin films for the application to MIS tunnel emitter" Synthetic Metals. 71. 2267-2268 (1995)
K.Usami:“用于 MIS 隧道发射极应用的 BaF_2 薄膜的制备”合成金属。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K. Usami: "Preparation of BaF_2 thin films for the application to MIS tunnel emitter" Synthetic Metals. Vol.71. 2267-2268 (1985)
K. Usami:“用于 MIS 隧道发射极应用的 BaF_2 薄膜的制备”合成金属。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Usami: "Preparation of BaF_2 thin films for the application to MIS tunnel emitter" Synthetic Merals. Vol.71. 2267-2268 (1995)
K.Usami:“用于 MIS 隧道发射器应用的 BaF_2 薄膜的制备”合成金属。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Fabrication of miniature cathode-ray-tube for flat panel image display by using MIS tunnel emitter.
-
批准号:13650372
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.3万
-
财政年份:2001
-
负责人:USAMI Kouichi
-
依托单位:
Study of p-n Junction Tunnel Emitter for Vacuum Integrated Circuits.
-
批准号:01550305
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.41万
-
财政年份:1989
-
负责人:USAMI Kouichi
-
依托单位:
海外基金