Study on the Vapor-Phase Electrodeposition Utilizing Low Temperature Plasma

低温等离子体气相电沉积研究

• 批准号: 02650585
• 负责人: OGUMI Zempachi
• 金额: $ 1.02万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02650585/
• 关键词: Electrodeposition; Probe; Vapor-Phase Electrolysis; Glow Discharge; Plasma; Sheath; イオンシ-ス

Electrolysis in the vapor-phase has been carried out using low temperature plasma as the conductive fluid. This process is unique from other vapor-phase electrochemical processes in that a DC bias circuit, separate from the plasma generation circuit, is placed in the plasma, and is used for the electrodeposition processes.The vapor-phase electrodeposition process is demonstrated for the electrodeposition of Agl from I_2 from glow-discharge plasma at Ag^+ ion conductive glass/plasma interface. AF power of 50 W was applied to generate low temperature plasma. DC bias of 150 V was applied. Conductivity of the glow discharge plasma estimated by double probe I-V characteristics was 10^<-1>-10^<-2> S cm^<-1>. SEM, EPMA, ESCA and X-ray diffraction measurements confirmed the deposition by vapor-phase electrodeposition process of Agl film. The current efficiency for the deposition was 65%. Two possible reasons for relatively low current efficiency are etching of the growing Agl film by exposure to the plasma, and electronic conduction through the growing Agl layer.This new electrochemical system will open a new field in electrochemistry, not only because of its numerous probable applications, but also of its importance to the theoretical understanding of the electrified interface.

采用低温等离子体作为导电流体进行了气相电解。该方法与其他气相电化学方法不同之处在于，在等离子体中设置了独立于等离子体发生电路的直流偏压电路，并将其用于电沉积过程，在Ag^+离子导电玻璃/等离子体界面上从辉光放电等离子体中的I_2电沉积Agl。施加50 W的AF功率以产生低温等离子体。施加150 V的DC偏压。用双探针I-V特性曲线估算了辉光放电等离子体的电导率为10^<-1>-10 ^<-2>S cm^2<-1>。SEM、EPMA、ESCA和X射线衍射测试证实了Agl薄膜的气相电沉积过程。沉积的电流效率为65%。电流效率相对较低的两个可能原因是暴露在等离子体中的AgI膜的腐蚀和通过AgI层的电子传导，这种新的电化学系统将开辟电化学的新领域，不仅因为它的许多可能的应用，而且它对带电界面的理论理解的重要性。

项目成果

Zempachi Ogumi: "Preparation of Thin Yttria Stabilized Zirconia Films by VaporーPhase Electrolytic Deposition and its Application to SOFC" Proceedings of 2nd international Symposium on SOFC. 201-204 (1991)

Zempachi Ogumi：“通过气相电解沉积制备氧化钇稳定氧化锆薄膜及其在 SOFC 中的应用”第二届 SOFC 国际研讨会论文集 201-204（1991 年）。

小久見 善八: "Electrochemical Deposition of Oxides at Oxide/Plasma Interfaces" Jounal of Electrochemical Society.

Zenpachi Kokumi：“氧化物在氧化物/等离子体界面处的电化学沉积”电化学学会杂志。

Zempachi Ogumi: "Preparation of Thin Yttria Stabilized Zirconia Films by Vapor-Phase Electrolytic Deposition and its Application to SOFC" Proceedings of 2nd international Symposium on SOFC. 201-204 (1991)

Zempachi Ogumi：“气相电解沉积氧化钇稳定氧化锆薄膜的制备及其在 SOFC 中的应用”第二届 SOFC 国际研讨会论文集。

Zempachi Ogumi: "Electrodeposition of Thin Yttria Stabilized Zirconia Layers Using Glow Discharge Plasma" Journal of Applied Physics.

Zempachi Ogumi：“使用辉光放电等离子体电沉积薄氧化钇稳定氧化锆层”应用物理学杂志。