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Investigation for Synthesis of Transplutonium Arsenic Compounds

跨钚砷化合物的合成研究

基本信息

批准号：
03680189
负责人：
SHIOKAWA Yoshinobu
金额：
$ 1.28万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

A new microtechnique for synthesis of transplutonium compounds is desirable,because the scarcity,radioactivity,toxicity and chemical activity of actinide materials must be taken into account in their preparation and handling.For this purpose the synthesis of transplutonium arsenic compounds with a small quantity was investigated by chemical vapor deposition using beta-diketone chelates of lanthanides(III),thorium(IV)and uranium(IV)instead of transplutonium elements(III). Much attention was paid to prepare the starting material with a small quantity for arsenic compounds.This work consists of four parts,i.e.preparation of oxide films,preparation of sulfide films,preparation of fluoride films and reactivity of a new chelate compound of thallium.(1)Preparation of oxide films: Highly crystalline thin film of lanthanide,thorium and uranium oxides was prepared at atmospheric pressure and temperatures as low as 400-600ﾟC by chemical vapor deposition using their dipivaloylmethane(2,2,6,6-tetra … More methy1-3,5-heptanato)chelates and reactant gas(O_2, H_2O).(2)Preparation of sulfide films. Preparation of thin film of lanthanide sulfides was studied by the similar technique using reactant gas H_2S.Two kinds of sulfide,Ln_2O_2S oxysulfides and EuS monosulfide,were obtained at temperatures as low as 390-570ﾟC.(3)Preparation of fluoride films. Preparation of thin film of lanthanide fluoride was studied by the similar technique using reactant gas mixture of CF_2Cl_2 and O_2. Two kinds of fluorides, oxyfluoride LnOF and trifluoride LnF3,were obtained along a deposition tube at temperatures as low as 300-600ﾟC.(4)A new thallium chelate. A new volatile chelate,(2,2,6,6-tetramethy1-3,5-heptane dionato)Tl(I)were prepared and analyzed by chemical analysis,thermal analysis and mass spectrometry.The reactivities were investigated by chemical vapor deposition.Since thin film can be deposited in intricate patterns and on a restricted surface area,the chemical vapor deposition opened up a new area of application for a variety of actinide compounds as a new microscale preparation technique. Less

本文采用化学气相沉积法，以镧系元素（III）、钍（IV）和铀（IV）的β-二酮螯合物代替超钚元素（III），合成了少量的超钚砷化合物。本工作着重于制备少量砷化合物的起始原料，包括氧化物膜的制备、硫化物膜的制备、氟化物膜的制备和一种新的铊螯合物的反应性。（1）氧化物薄膜的制备：在常压和低至400-600 ℃的温度下，通过化学气相沉积，使用镧系元素、钍和铀氧化物的二特戊酰甲烷（2，2，6，6-四乙酰基甲烷），制备了它们的高度结晶的薄膜。 ...更多信息甲基-3，5-庚基）螯合物和反应气体（O_2、H_2O）。（2）硫化物薄膜的制备。用类似的方法，以H_2S为反应气体，在390-570 ℃的低温下，制备了两种稀土硫化物薄膜：Ln_2O_2S氧硫化物和EuS单硫化物。（3）氟化物薄膜的制备。采用类似的方法，以CF_2Cl_2和O_2为反应气体，研究了镧系氟化物薄膜的制备。在低至300-600摄氏度的温度下，沿着沉积管获得了两种氟化物：氧氟化物LnOF和三氟化物LnF 3。(4)A新的铊螯合物。一种新的挥发性螯合物，制备了（2，2，6，6-四甲基-3，5-庚二酮）铊（I），并通过化学分析、热分析和质谱进行了分析。通过化学气相沉积研究了反应性。由于薄膜可以以复杂的图案和有限的表面积沉积，化学气相沉积作为一种新的微尺度制备技术，为各种锕系化合物开辟了新的应用领域。少