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Development of Low-Damage, Maskless 3-Dimensional microstructure Fabrication Technology

低损伤、无掩模3维微结构制造技术的开发

基本信息

批准号：
03555003
负责人：
GAMO Kenji
金额：
$ 11.01万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03555003/
关键词：
Focused ion beam technology Low-damage process Low-energy ion beams Retarding electron optics Ion beam assisted etching Ion beam irradiation damage 集束イオンビ-ム加工低エネルギイオンビ-ムイオンビ-ムデポジションイオンビ-ム支援エッチングイオン照射誘起欠陥

项目摘要

The present research aims to develop low damage maskless 3-dimensional microstructure fabrication technology. We first fabricated a low energy focused ion beam system which produces low energy (<100eV), submicron focused ion beams. The beam spot size was estimated to be <500nm from the resolution of observed metal mesh images at a current intensity of 100pA. This spot size is nearly in agreement with that estimated by optics simulation performed using Munro PROGRAM. Optics simulation was also performed to estimate the effect of space charge broadening. This predicts that the effect is almost negligible even at an energy of 100eV. FOr the development of processing technology, we investigated ion beam assisted etching(IBAE), vacuum lithography and ion beam assisted deposition(IBAD) techniques. For the etching, GaAs wafers were etched by IBAD. We observed by photoluminescence measurement that damage is significantly reduced by low energy IBAE. Very high etching rate(>500atoms/ion) was observed by pulse irradiation and the results was explained by a rate equation model. It was shown that vacuum lithography technique using low energy focused ion beams reduced required dose for patterning GaAs further and effective to reduce damage introduction. W metal deposition was performed on GaAs surface and damage in GaAs was estimated by Schottky characteristics of fabricated W/GaAs contacts. Contacts with a barrier height of 0.8eV and ideality factor of 1.2 was formed, All the observed results suggest that low energy focused ion beams are promising for low damage, maskless 3-dimensional microstructure fabrication.

本研究旨在发展低损伤无掩模三维微结构制造技术。我们首先制作了一个低能聚焦离子束系统，产生低能（<100 eV），亚微米聚焦离子束。根据在100 pA电流强度下观察到的金属网图像的分辨率，估计束斑尺寸<500 nm。该光斑尺寸与使用Munro光散射进行的光学模拟所估计的光斑尺寸几乎一致。光学模拟也被用来估计空间电荷展宽的影响。这预示着即使在100 eV的能量下，这种效应也几乎可以忽略不计。在加工技术的发展方面，我们研究了离子束辅助刻蚀（IBAE）、真空光刻和离子束辅助淀积（IBAD）技术。对于蚀刻，通过IBAD蚀刻GaAs晶片。我们观察到的光致发光测量的损伤显着降低低能IBAE。在脉冲辐照条件下，观察到了很高的刻蚀速率（> 500 atoms/ion），并用速率方程模型解释了实验结果。结果表明，采用低能聚焦离子束的真空光刻技术进一步降低了GaAs图形化所需的剂量，有效地减少了损伤的引入。在GaAs表面上进行W金属沉积，并通过制作的W/GaAs接触的肖特基特性来估计GaAs中的损伤。实验结果表明，低能聚焦离子束在低损伤、无掩模三维微结构制造中具有良好的应用前景。