Study on Single-Electron Transistor controlled by Environmental Impedance

环境阻抗控制的单电子晶体管研究

• 批准号: 10305029
• 负责人: GAMO Kenji
• 金额: $ 18.94万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305029/
• 关键词: single-electron transistor; Coulomb blockade; environmental impedance; ultra-small tunnel junction; electromagnetic environment effect

In order to discuss the effects of environmental impedance on Coulomb blockade, we established a basic theory in which we can calculate transport properties of a single-electron transistor (SET) with arbitrary environmental impedance. We calculated numerically transport properties of SETs self-consistently and showed that SETs can be controlled by environmental impedance modulation. Moreover, we estimated the maximum parasitic capacitance, because environmental impedance becomes low due to parasitic capacitance in actual devices.We fabricated SETs controlled by environmental impedance modulation, using a GaAs/AlGaAs heterostructure and electron-beam lithography technique and measured transport properties at low temperature. We succeeded in controlling actually the transport properties by modulating the environmental impedance.We also fabricated SETs with different parasitic capacitance and showed that SET can not be controlled when the capacitance becomes large.We established a theory for three-terminal devices in which all charges and environmental impedances were treated quantum mechanically. Using the theory, we discussed charge fluctuations and asymmetric environment effects.Controlling charge fluctuations is quite important in single electronics because SETs are severely affected by charge fluctuation.

为了讨论环境阻抗对库仑阻塞的影响，我们建立了一个基本理论，可以计算具有任意环境阻抗的单电子晶体管（SET）的输运特性。我们自洽地计算了 SET 的输运特性，并表明 SET 可以通过环境阻抗调制进行控制。此外，我们估计了最大寄生电容，因为实际器件中的寄生电容导致环境阻抗变低。我们使用GaAs/AlGaAs异质结构和电子束光刻技术制造了受环境阻抗调制控制的SET，并测量了低温下的传输特性。我们成功地通过调制环境阻抗来实际控制传输特性。我们还制造了具有不同寄生电容的SET，并表明当电容变大时SET无法控制。我们建立了三端器件的理论，其中所有电荷和环境阻抗都被量子力学处理。利用该理论，我们讨论了电荷波动和不对称环境效应。控制电荷波动在单个电子器件中非常重要，因为SETs受到电荷波动的严重影响。

项目成果

F.Wakaya: "Control of Single-Electron Device Using Environmental Impedance Modulation"Jpn.J.Appl.Phys. 38. 2812-2815 (1999)

F.Wakaya：“使用环境阻抗调制控制单电子器件”Jpn.J.Appl.Phys。

F.Wakaya: "Transport Properties of a Resistively-Coupled Single-Electron Transistor"Jpn.J.Appl.Phys. 38. 2470-2472 (1999)

F.Wakaya：“电阻耦合单电子晶体管的传输特性”Jpn.J.Appl.Phys。

F.Wakaya,S.Iwabuchi,H.Higurashi,Y.Nagaoka and K.Gamo: "Possible control method for single-electron tunneling based on environmental-impedance modulation" Appl.Phys.Lett.74. 135-137 (1999)

F.Wakaya、S.Iwabuchi、H.Higurashi、Y.Nagaoka 和 K.Gamo：“基于环境阻抗调制的单电子隧道的可能控制方法”Appl.Phys.Lett.74。

F.Wakaya: "Capacitively-and resistively-coupled single-electron transistor"Microelectronic Engineering. (発行予定).

F. Wakaya：“电容和电阻耦合单电子晶体管”微电子工程（待出版）。

F.Wakaya: "Single-Electron Transistor Controlled by Environmental Impedance: Effects of Capacitive Environmental Impedance"Microelectronic Engineering. 46. 153-156 (1999)

F.Wakaya：“环境阻抗控制的单电子晶体管：电容性环境阻抗的影响”微电子工程。