Study on Nanofabrication and Electron Wave Devices

纳米加工与电子波器件研究

• 批准号: 06044137
• 负责人: GAMO Kenji
• 金额: $ 7.49万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06044137/
• 关键词: nanofabrication; electron wave devices; focused ion beam; molecular beam epitaxy; total vacuum process; insitu fabrication process; buried structure; growth interruption; 電子波導波方向性結合器

The achievements of this year can be divided into the following three subjects.1. In-situ processWe succeded to form Si island by direct deposition on Au or GaAs substrate using low-energy focused ion beam (FIB). Buried two-demensional electron layrs were fabricated using selective-area doping by low-energy FIB and regrowth by MBE.The carrier profile was measured using C-V method with various anneal conditions. This technique is applicable to fabrication of electron-wave devices.Growth interruption causes many problems in the total-vacuum processing. Therefore, we investigated the effect growth interruption experimentally and theoretically. It was found that the amount of carrier depletion caused by growth interruption depended on the Si doping concentration. It was concluded by the self-consistent calculation of Schrodinger and Poisson equations that the dependence was due to the shallow interface states. The growth interruption thus causes sever effect in the fabrication process even … More in the ultra-high-vacuum chamber. Therefor we investigated the passivation effect using As and found that As passivation is effective to reduce the interface-state density.2. In-situ processing instrumentIn order to reduce the interface-state density caused by the growth interruption, an additional ion pump was added to the chamber for low-energy FIB.We improved the electronic circuit for retarding to achieve fine focus, and it was confirmed that the sub-micron diameter was realized.3. Electron-wave deviceWe investigated that the effects of asymmetric bias on the confinement potential in the quantum point contact of metal split gates. We successfully fabricated that an anti-dot superlattice using electron beam lithography (University of Cambridge), Ar ion etching (Osaka University) and reactive ion etching (University of Cambridge), which has the dots of 40-nm diameter and 100-nm pitch.We developed the selective-area oxidation process using electron beam. We applied the process technique to realize small tunneling barrier of Cr and Cr_2O_3. Less

这一年的成就可以分为以下三个主题。采用低能聚焦离子束（FIB）在Au或GaAs衬底上直接淀积硅岛。采用低能FIB选区掺杂和MBE再生长技术制备了二维电子埋层，用C-V方法测量了不同退火条件下的载流子分布。该技术适用于电子波器件的制作，但在全真空工艺中，生长中断会引起许多问题。因此，我们从实验和理论上研究了生长中断的效果。结果发现，生长中断引起的载流子耗尽量取决于Si掺杂浓度。通过对薛定谔方程和泊松方程的自洽计算，得出这种依赖性是由于浅界面态的存在。因此，生长中断对制造过程造成严重影响， ...更多信息 在超高真空室里因此，我们研究了As的钝化效果，发现As钝化能有效降低界面态密度.原位加工装置为了降低生长中断引起的界面态密度，在低能FIB腔室中增加了一个离子泵，改进了延迟电路，实现了细聚焦，证实了亚微米直径的实现.电子波器件我们研究了非对称偏压对金属分裂栅量子点接触中限制势的影响。我们采用电子束光刻（剑桥大学）、Ar离子刻蚀（大坂大学）和反应离子刻蚀（剑桥大学）的方法成功地制备了一个反点超晶格，其点直径为40 nm，间距为100 nm。我们应用该工艺技术实现了Cr和Cr_2O_3的小隧穿势垒。少

项目成果

J.Yanagisawa: "Formation of Buried Two-Dimensional Electron Gas in GaAs by Si Ion Doping Using MBE-FIB Combined System" Mat.Res.Soc.Symp.Proc.(出版予定).

J. Yanagisawa：“使用 MBE-FIB 组合系统通过 Si 离子掺杂在 GaAs 中形成埋藏二维电子气体”Mat.Res.Soc.Symp.Proc。

K.Kito: "Maskless Deposition of Au on GaAs by Low-Energy Focused Ion Beam" Jpn. J.Appl. Phys.12B. 6853-6856 (1995)

K.Kito：“通过低能聚焦离子束在 GaAs 上无掩模沉积 Au”Jpn。

J.Yanagisawa: "Low Energy Focused Ion Beam System and Direct Deposition of Au and Si" J.Vac. Sci Technol. B. 13. 2621-2624 (1995)

J.Yanagisawa：“低能量聚焦离子束系统和金和硅的直接沉积”J.Vac。

"Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation" Japanese Journal of Applied Physics. 33. 7184-7189 (1994)

“低能离子辐照制造的一维横向表面超晶格的制造和磁传输”日本应用物理学杂志。

F.Wakaya: "Transport Properties and Fabrication of Coupled Electron Waveguides" Jpn.J.Appl.Phys.34. 4446-4448 (1995)

F.Wakaya：“耦合电子波导的传输特性和制造”Jpn.J.Appl.Phys.34。