Super-Parallel Analog Sensor Device for 3D Imaging

根据研究方案和财务方案，建立了实现硅芯片传感器的基本设计，该硅芯片传感器实时测量三维图像以用于三维物体的图像识别。一个基本的电路设计是通过使用一个模拟-数字电路仿真器，Miscosim PSpice的苹果MacIIci购买了这个援助，并通过建立一个原型与离散的电子部件。原型传感器系统由A）10 mW 670 nm激光二极管B）检流镜组成（普通扫描）C）16*16光电二极管阵列（滨松光子）D）几个CMOS DIP IC E）个人计算机（NEC PC 8901），和F）专用接口卡。由于每个像素使用一对光电二极管，因此系统具有16*8像素。从项目中获得了以下结果。1）一对光电二极管可以消除温度-暗电流效应、光电二极管灵敏度变化等不良影响。2）设计了一个由CMOS反相器、模拟开关和二极管组成的实验电路。实验结果表明，该电路可以采用普通的数字CMOS工艺，两片多晶硅和两片金属制作。3）原型传感器每秒可以测量120幅以上的三维图像，表明了超高速距离成像硅芯片传感器的可行性。其可行性对现场计算机视觉、机器人视觉和自动视觉检测具有重要影响。所获得的技术思路可为同类实用传感器的研制提供参考。

According to the research proposal and the financial proposal, a basic design for implementing a silicon chip sensor which measures three dimensional images in realtime for image recognition of 3D objects is established. A basic circuit design is confirmed by using a analog-digital circuit simulator, Miscosim PSpice on Apple MacIIci bought by this aid, and by building a prototype with discrete electronic parts. The prototype sensor system consists ofA) 10mW 670nm laser diodeB) galvan mirror (General Scanning)C) 16*16 photo diode array (Hamamatsu Photonics)D) Several CMOS DIP ICsE) personal computer (NEC PC8901), andF) special interface card.The system has 16*8 pixels because each pixel uses a pair of photo diodes.The following results are obtained from the project.1) A pair of photo diodes can be cancel several ill effects, such as temperature-dark current effect, sensibility variation among photo diode.2) An experimental circuit design can consists of CMOS inverters, analog switches and diodes. It shows that the circuit can be fabricated in normal digital CMOS process, two polysilicon and two metal.3) The prototype sensor can measure more than 120 3D-images in a second.Finally, the project can show a feasibility of very high-speed range imaging silicon chip-sensor. The feasibility makes an important influence for the field computer vision, roboto vision and automatic visual inspection. The obtained technical ideas must be refered for building same kind of practical sensors.