Theoretical Study on Charge Fluctuation in Strongly Correlated Electrons
强相关电子电荷涨落的理论研究
基本信息
- 批准号:03640306
- 负责人:
- 金额:$ 1.15万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1991
- 资助国家:日本
- 起止时间:1991 至 1993
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The main aim of this research project is, as one of the clues to clarify the mechanism for obtaining the high-T_c superconductor, to investigate roles of charge fluctuation in the d-p model which is believed to describe the strongly correlated electrons in the CuO_2 2-dimensional electron systems well.1. Firstly we applyed the 1/N-expansion theory to study propertie of the impurity Anderson model and the lattice Anderson model which have been known to some extent, have clarified the roles of the charge fluctnation and confirmed the usefullness of the 1/N-expansion theory.2. Secondly we employed the 1/N-expansion theory to investigate properties of the d-p model and have found the charge fluctuation to play important roles for determining the properties of the high-T_c superconductors as follows :(a)At lower temperatures(T<T_0)where T_0 is the so-called coherence temperatute, hole doping creates some new stable quasiparticle states inside the charge transfer energy gap(called as ingap states)and the system behaves as a Fermi liquid. By denoting the band width of the ingap states omega_0, T_0 is given by T_0 (〕SY.simeq.〔) 0.1omega_0.(b)At intermediate temperatures, (T_0<T<omega), the system behaves as a marginal Fermi liquid, where the quasi-particle life time is proportional to 1/T and the magnetic susceptibility shows cross-over from the Pauli Paramagnetism to the Curie law.(c)The Coulomb repulsion between electrons at the nearest Cu and O sites enhances the charge fluctuation, the exchange interaction between electrons at the nearest Cu sites stabilizes the antiferromagnetic order in the ingap states and the direct transfer between electrons at the nearest O sites may modify the properties of the systems significantly.
本研究的主要目的是探讨电荷涨落在d-p模型中的作用,作为阐明获得高T_c超导体的机制的线索之一,d-p模型被认为能很好地描述CuO_2二维电子系统中的强关联电子.首先,我们应用1/N展开理论研究了杂质安德森模型和晶格安德森模型的性质,阐明了电荷涨落的作用,证实了1/N展开理论的有效性.其次,我们用1/N展开理论研究了d-p模型的性质,发现电荷涨落对决定高温超导体的性质起着重要作用:(a)在较低温度(T<T_0)(T_0是所谓的相干温度),空穴掺杂在电荷转移能隙内产生一些新的稳定的准粒子态(称为Inap态),系统表现为费米液体。通过表示ingap态的带宽ω_0,T_0由T_0()SY·simeq给出。()0.1 Ω_0。(b)At在中温(T_0<T<Ω),系统表现为临界费米液体,准粒子寿命与1/T成正比,磁化率表现为从泡利顺磁性到居里定律的交叉。(c)最近Cu位和O位电子间的库仑排斥增强了电荷涨落,最近Cu位电子间的交换相互作用稳定了Inap态的反铁磁有序,最近O位电子间的直接转移可能显著改变系统的性质。
项目成果
期刊论文数量(48)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
D.S.Hirashima: "Electronic state and superconductivity in the d-p model" Physica. C185-189. 1513-1514 (1991)
D.S.Hirashima:“d-p 模型中的电子态和超导性”Physica。
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- 影响因子:0
- 作者:
- 通讯作者:
K.Miura: "Electronic states in the d-p model with p-p direct transfer" Physica. C203. 431-435 (1992)
K.Miura:“具有 p-p 直接传递的 d-p 模型中的电子态”Physica。
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- 影响因子:0
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- 通讯作者:
Y.Ono: "Kondo insulator and charge transfer insulator in lattice Anderson model" J.Phys.Soc.Japan. 63. No.4 (1994)
Y.Ono:“晶格安德森模型中的近藤绝缘体和电荷转移绝缘体”J.Phys.Soc.Japan。
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- 影响因子:0
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Y.Ono: "Kondo Insulator and Charge Transfer Insulator in Lattice Anderson Model" J.Phys.Soc.Jpn.63. No.4 (1994)
Y.Ono:“晶格安德森模型中的近藤绝缘体和电荷转移绝缘体”J.Phys.Soc.Jpn.63。
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- 影响因子:0
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Y.Kuroda: "On the I/N-Expansion Studies of Infumite-U Anderson Models" Progr.Theor.Phys.Supplement. 108. 173-198 (1992)
Y.Kuroda:“关于 Infumite-U 安德森模型的 I/N 扩展研究”Progr.Theor.Phys.Suplement。
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KURODA Yoshihiro其他文献
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