OPTICAL STUDY OF NEW THERMAL DONORS IN SILICON

硅中新热供体的光学研究

• 批准号: 03650017
• 负责人: KAMIURA Yoichi
• 金额: $ 1.28万
• 依托单位: OKAYAMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03650017/
• 关键词: Silicon; Thermal Donor; Oxygen Donor; Infrared Absorption; Double Donor; Oxygen Cluster; Oxygen Diffusion; サ-マル・ドナ-; 酵素ドナ-; ダブル・ドナ-; 酵素クラスタ-

1. We have measured infrared absorption at 4K of phosphorus-doped CZ Si crystals annealed at 470ﾟC for long durations. We have observed many sharp absorption peaks arising from the electronic transitions from the ground states to excited states of the shallow levels of several species of thermal donor (TD). The present work has been made to investigate the relationship between the annihilation behavior of these TD peaks and the generation behavior of new thermal donor (NTD) during the prolonged annealing and the effects of carbon on this relationship and also to discuss the mechanism of the generaton and annihilation of TD and NTD and the mechanism of their electrical activation.2. The results obtained are as follows. The same infrared absorption peaks were observed regardless of the carbon density. This means that the same TD species were formed independently of the carbon density. However, the formation of TD was suppressed by the presence of carbon. More remarkably, the annihilation of TD occurred anomalously rapidly in carbon-rich crystals, accompanying the annihilation of substitutional carbon. An important feature is the close correlation of these annihilation with the formation of NTD.3. We propose the following hypothesis. Si self-interstitials created during the oxygen aggregation process eject substitutional carbon into an interstitial site and this interstitial carbon rapidly diffuses to TD to decorate them so as to form electrically inactive clusters, which act as the embryos of NTD.In other words, oxygen atoms diffuse to these neutral embryos to grow the clusters and cause the generation of electrically active donors, NTD.

1.我们测量了掺磷直拉硅单晶在470 ℃长时间退火后在4K下的红外吸收。我们观察到许多尖锐的吸收峰，这些吸收峰是由几种热施主的浅能级从基态到激发态的电子跃迁引起的。研究了这些TD峰的湮没行为与长时间退火过程中新热施主（NTD）的产生行为之间的关系以及碳对这种关系的影响，并讨论了TD和NTD的产生和湮没机制以及它们的电激活机制.所得结果如下。无论碳密度如何，都观察到相同的红外吸收峰。这意味着相同的TD物质独立于碳密度形成。然而，TD的形成被碳的存在抑制。更值得注意的是，TD的湮没在富碳晶体中异常迅速地发生，同时伴随着替代碳的湮没。一个重要的特征是这些湮灭与NTD的形成密切相关。我们提出以下假设。在氧聚集过程中产生的Si自发光体将替位碳喷射到间隙中，这些间隙碳迅速扩散到TD中并修饰它们，从而形成电惰性团簇，这些团簇作为NTD的胚，换句话说，氧原子扩散到这些中性胚中，使团簇生长并导致电活性施主NTD的产生。

项目成果

Y.KAMIURA: "OXYGEN-RELATED DONORS IN SILICON" PROC.OF SYMPOSIUM ON ADVANCED SCIENCE AND TECHNOLOGY OF SILICON MATERIALS. 442-448 (1991)

Y.KAMIURA：“硅中与氧相关的捐助者”硅材料先进科学技术研讨会议程。

上浦洋一: "Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy" Japanese Journal of Applied Physics,Part2. 32. L1715-L1717 (1993)

Yoichi Kamiura：“通过红外吸收光谱研究直拉硅中碳引起的热双供体的快速湮灭”《日本应用物理学杂志》，第 32 部分。L1715-L1717 (1993)

上浦 洋一: "Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy" Jpn.J.Appl.Phys.32. L1715-L1717 (1993)

Yoichi Kamiura：“通过红外吸收光谱研究直拉硅中碳诱导的热双供体的快速湮灭”Jpn.J.Appl.Phys.32 (1993)。

Y.KAMIURA: "CARBON-INDUCED RAPID ANNIHILATION OF THERMAL DOUBLE DONORS IN CZOCHRALSKI SILICON STUDIED BY INFRARED ABSORPTION SPECTROSCOPY" JAPANESE JOURNAL OF APPLIED PHYSICS. VOL.32, NO.12A. L1715-L1717 (1993)

Y.KAMIURA：“通过红外吸收光谱研究直拉硅中碳致热双供体的快速湮灭”日本应用物理学杂志。

上浦 洋一: "Oxygen-Related Donors in Silicon" Proc.of Symposium on Advanced Science and Technology of Silicon Materials. 442-448 (1991)

Yoichi Kamiura：“硅中的氧相关供体”硅材料先进科学与技术研讨会论文集442-448（1991）。