CONTROL OF HYDROGEN DYNAMICS IN SEMICONDUCTORS USING ELECTRONIC

在本研究中，我们利用等温DLTS、IR、ESR和SR技术研究了Si中氢-铂（H-Pt）复合缺陷的电子态和原子构型、氢在Pt杂质周围的振动和旋转运动、氢向应变SiGe薄膜中的扩散以及氢对SiGe薄膜应变弛豫的影响，得到了以下结果。利用等温DLTS、ESR技术测定了H-Pt缺陷的对称性和结构。我们还研究了缺陷电子能级的应力依赖性，发现缺陷在单轴应力下会重新定向。我们确定了缺陷稳定态和亚稳态态之间能量差的应力系数。此外，我们还研究了电荷状态对氢在Pt周围局部运动活化能的影响，发现当缺陷的电子能级没有被电子占据时，氢的运动增强。我们实验研究了单轴应力下Si中H-Pt缺陷引起的红外吸收峰的分裂，观察到PtH缺陷的峰位于1880.7 cm^<-1>， PtH_2缺陷的峰位于1873.1和1891.9 cm^<-1>。在0.16 GPa的应力作用下，峰的分裂强度比与理论预测值基本一致。我们发现在Ge衬底上的压缩应变SiGe薄膜比在Si衬底上的拉伸应变SiGe薄膜更容易吸收氢原子。我们还发现，在随后的热处理过程中，预掺入的氢原子增强了Ge上SiGe薄膜的应变弛豫。晶格应变影响氢动力学的结果超出了第一个研究项目的预期。

In this research, we have studied the electronic state and atomic configuration of hydrogen-platinum (H-Pt) complex defects in Si, vibrational and rotational motion of hydrogen around the Pt impurity, hydrogen indiffusion into strained SiGe films and the influence of hydrogen on the strain relaxation of SiGe films using isothermal DLTS, IR, ESR and SR techniques, and have obtained the following results.1.We have determined the symmetry and structure of H-Pt defects by isothermal DLTS, ESR techniques. We have also studied the stress dependency of defect electronic levels, and have found that defects reorient under uniaxial stress. We have determined the stress coefficient of the energy difference between stable and metastable configurations of defects. In addition, we have studied the effect of charge state on the activation energy for hydrogen local motion around Pt, and have found that hydrogen motion is enhanced when the electronic level of defects is not occupied by an electron.2.We have experimentally studied the splitting of IR absorption peaks due to H-Pt defects in Si under uniaxial stress, and have observed a peak at 1880.7 cm^<-1> of the PtH defect and peaks at 1873.1 and 1891.9 cm^<-1> of the PtH_2 defect. The intensity ratios of peaks split under a stress of 0.16 GPa are nearly equal to those predicted by theory.3.We have found that hydrogen atoms incorporate more easily into the compressively strained SiGe film on Ge substrate than the tensile strained SiGe film on Si substrate. We have also found that the pre-incorporated hydrogen atoms enhanced the strain relaxation of the SiGe film on Ge during subsequent thermal treatment. Such a result that strain of lattice affects the dynamics of hydrogen is an accomplishment beyond the expectation in the first research project.