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Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices

Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices
水蒸气等离子体处理GaN基半导体发光增强机理及其在发光器件中的应用研究
批准号:
21560330
负责人:
KAMIURA Yoichi
金额:
$3.0万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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中文摘要
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英文摘要
In the present study, we have investigated how to enhance the efficiency of blue emission from GaN-based semiconductors, which make the base of white light emission, through an materials approach to aim the application to the highly efficient white-light emitting diodes for lighting. We have attained 10 to 20 times enhancement of blue emission by optimizing the conditions of plasma treatments using various gas species(water vapor, hydrogen, oxygen). We have found that this enhancement is due to the effects of atomic hydrogen, and have presented a new technical trend to develop highly efficient white-light emitting diodes. The present results may contribute to the carbon reduction and preservation of ecological environment of the earth.
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水蒸气等离子体处理对AlGaN发光的影响
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [松田洋平, 上浦洋一, 石山武, 山下善文]
通讯作者: 山下善文
水蒸気プラズマ処理を用いたInGaN発光の増大
使用水蒸气等离子体处理增强 InGaN 发光
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [竹中俊明, 上浦洋一, 石山武, 山下善文]
通讯作者: 山下善文
Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote Plasma Treatment
通过水蒸气远程等离子体处理增强 InGaN 和 ZnO 的发光
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [Y. Kamiura, T. Takenaka, T. Ishiyama, Y. Murakami, C. Takenaka, Y. Yamashita]
通讯作者: Y. Yamashita
In0.1Ga0.9Nの発光に対するプラズマ処理とアニールの効果
等离子体处理和退火对In0.1Ga0.9N发光的影响
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [藤原翔太, 竹中俊明, 上浦洋一, 石山武, 山下善文]
通讯作者: 山下善文
10
    CONTROL OF HYDROGEN DYNAMICS IN SEMICONDUCTORS USING ELECTRONIC
    • 批准号:
      15340099
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.51万
    • 财政年份:
      2003
    • 负责人:
      KAMIURA Yoichi
    • 依托单位:
    OPTICAL STUDY OF NEW THERMAL DONORS IN SILICON
    • 批准号:
      03650017
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.28万
    • 财政年份:
      1991
    • 负责人:
      KAMIURA Yoichi
    • 依托单位: