Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices

在本研究中，我们已经研究了如何提高从GaN基半导体，这使得基础的白色光发射的蓝色发射的效率，通过材料的方法，旨在应用于高效率的白色发光二极管照明。我们已经实现了10至20倍的蓝色发光增强，通过优化使用各种气体物种（水蒸气，氢，氧）的等离子体处理的条件。我们发现这种增强是由于原子氢的影响，并提出了一个新的技术趋势，开发高效的白光发光二极管。本研究结果可为碳减排和保护地球生态环境做出贡献。

In the present study, we have investigated how to enhance the efficiency of blue emission from GaN-based semiconductors, which make the base of white light emission, through an materials approach to aim the application to the highly efficient white-light emitting diodes for lighting. We have attained 10 to 20 times enhancement of blue emission by optimizing the conditions of plasma treatments using various gas species(water vapor, hydrogen, oxygen). We have found that this enhancement is due to the effects of atomic hydrogen, and have presented a new technical trend to develop highly efficient white-light emitting diodes. The present results may contribute to the carbon reduction and preservation of ecological environment of the earth.