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An Amplified Imaging Sensor using a-Si:H Supper-lattice Photoconductive Layer

使用 a-Si:H 超晶格光电导层的放大成像传感器

基本信息

批准号：
03650255
负责人：
ANDO Takao
金额：
$ 1.28万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

Realization of the solid-state imaging sensor having a superior sensitivity over the human vision is important problem for us. To satisfy the demand, following subjects must be solved. a) The device structure with the aperture ratio of 100%. b) Pixel structure which the photo-excited carrier can be amplified in the pixel. c) New photo-electron conversion concept by which quantum efficiency larger than unity can be realized. The important results from this study are following. 1) The amplified solid-state imager overlaid by a-Si:H photodiode layer was implemented and the aperture ratio of 100% was realized. It was shown that the proposed device structure is available to future high definition imager. 2) New device structure using an avalanche multiplication was proposed and the multiplication gain over 100 was obtained. The realization of the solid-state imager having the effective quantum efficiency exceeding unity became possible. 3) An a-Si:H photodiode layer structure, which two regions, the carrier multiplication and the photon absorption can be separated each other, was proposed and the current amplification due to the avalanche multiplication was observed. It was shown that the blocking structure using the a-Si_3N_4 layer is suitable to prevent the hole injection from the electrode. An a-Si:H/a-SiC:H supper-lattice avalanche photodiode layer was also designed and fabricated. High conversion efficiency over unity was confirmed. 4) Spindt field electron emissions with rim geometry was fabricated and the emission levels of up to 40 muA per tip with applied voltage in the 500V range. It was found that the emission levels were larger than that of cone geometry cathode made by same fabrication process. The rim type emission array is the optimum structure applicable to the future solid-state imager.

实现具有超过人类视觉的上级灵敏度的固态成像传感器对我们来说是重要的问题。为了满足这一需求，必须解决以下问题。a）开口率为100%的器件结构。B）像素结构，其中光激发载流子可以在像素中被放大。c）可以实现大于1的量子效率的新的光电子转换概念。这项研究的重要结果如下。1)实现了a-Si：H光电二极管层覆盖的放大型固体成像器，并实现了100%的孔径比。结果表明，所提出的器件结构可用于未来的高清晰度成像器。2)提出了一种新的雪崩倍增器件结构，并获得了超过100的倍增增益。实现具有超过1的有效量子效率的固态成像器成为可能。3)提出了一种载流子倍增区和光子吸收区相互分离的a-Si：H光电二极管层结构，并观察到雪崩倍增效应引起的电流放大。结果表明，采用a-Si_3 N_4层的阻挡结构可以有效地防止空穴从电极注入。设计并制作了a-Si：H/a-SiC：H超晶格雪崩光电二极管层。证实了高于1的高转化效率。4)Spindt场电子发射与边缘几何形状的制造和高达40 μ A的每个尖端的发射水平与施加的电压在500 V的范围内。结果表明，该阴极的发射水平高于相同工艺条件下的锥形阴极。边缘型发射阵列是适用于未来固态成像器的最佳结构。