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Formation and patterning of tin oxide transparent

透明氧化锡的形成和图案化

基本信息

批准号：
03650264
负责人：
SAWADA Yutaka
金额：
$ 0.19万
依托单位：
Tokyo Institute of Polytechnics
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

Tin oxide films are widely used for transparent electrode for solar Cells etc. because of the advantage of low cost, frictional and chemical dubrability. However, tin oxide films cannot be applied to liquid crystal display etc. since the pattern formation by chemical etching with acids is impossible. The object of the present project is establishemnt of a novel production process of tin oxide transparent conductive films, particularly achievement of pattern formation of tin oxide films by a film formation technology originated by the present investigators, i.e. photochemical reaction of tin iodide evaporated film.The present project was prosecuted in two years. In the first year, (1992's), the parameters for the film deposition were experimentally optimized ; the main parameters were, temperature of the evaporation source, film thickness, substrate temperature and vacuum pressure. Precise temperature controle of the evaporation source was found to be particularly important to maintain the reproducibility of the product. In the second year (1993's), formation of tin oxide was investigated under various cnditions ; the main experimental parameters were, temperature, radiation of light, treating time and atmosphre. The presence of oxygen in the atmosphere was found to govern the reaction. The heating and light radiation was found to accelerate the reaction.One of the new knowledges obtained through the present project was detection of tin iodide (IV) SnI_4 as an intermediate compound by which the photochemical reaction from tin iodide (II) SnI_2 to tin oxide was elucidated so that universal industrial application technology was successfully established in the present project.

氧化锡薄膜因其成本低、摩擦和化学耐磨性等优点而被广泛用于太阳能电池等透明电极。然而，氧化锡膜不能应用于液晶显示器等，因为不可能通过酸的化学蚀刻来形成图案。本项目的目的是建立氧化锡透明导电薄膜的新型生产工艺，特别是通过本研究人员首创的成膜技术，即碘化锡蒸镀膜的光化学反应，实现氧化锡薄膜的图案形成。本项目历时两年进行。第一年（1992年），薄膜沉积参数经过实验优化；主要参数有：蒸发源温度、薄膜厚度、基板温度和真空压力。人们发现蒸发源的精确温度控制对于保持产品的再现性特别重要。第二年（1993年），在各种条件下研究了氧化锡的形成；主要实验参数为温度、光辐射、处理时间和气氛。人们发现大气中氧气的存在控制着反应。发现加热和光辐射可以加速反应。本项目获得的新知识之一是检测了碘化锡(IV) SnI_4作为中间体化合物，阐明了碘化锡(II) SnI_2到氧化锡的光化学反应，从而成功建立了通用的工业应用技术。