Formation and patterning of tin oxide transparent

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Tin oxide films are widely used for transparent electrode for solar Cells etc. because of the advantage of low cost, frictional and chemical dubrability. However, tin oxide films cannot be applied to liquid crystal display etc. since the pattern formation by chemical etching with acids is impossible. The object of the present project is establishemnt of a novel production process of tin oxide transparent conductive films, particularly achievement of pattern formation of tin oxide films by a film formation technology originated by the present investigators, i.e. photochemical reaction of tin iodide evaporated film.The present project was prosecuted in two years. In the first year, (1992's), the parameters for the film deposition were experimentally optimized ; the main parameters were, temperature of the evaporation source, film thickness, substrate temperature and vacuum pressure. Precise temperature controle of the evaporation source was found to be particularly important to maintain the reproducibility of the product. In the second year (1993's), formation of tin oxide was investigated under various cnditions ; the main experimental parameters were, temperature, radiation of light, treating time and atmosphre. The presence of oxygen in the atmosphere was found to govern the reaction. The heating and light radiation was found to accelerate the reaction.One of the new knowledges obtained through the present project was detection of tin iodide (IV) SnI_4 as an intermediate compound by which the photochemical reaction from tin iodide (II) SnI_2 to tin oxide was elucidated so that universal industrial application technology was successfully established in the present project.