Rapid Growth of Diamond Film by Combustion Plasma Coupled Inductively with Radio Frequency Power

有报道称，以乙炔氧为原料，采用简单的CVD技术，利用燃烧火焰在大气环境中沉积金刚石膜。在我们的实验中，射频电力与燃烧火焰电感耦合，以等离子体形式激发火焰。Mo， Cu或Ti衬底放置在燃烧火焰下的水冷铜台上，燃烧火焰由通过铜工作线圈提供的射频电源激发。在Mo或Cu衬底的抛光镜面上只沉积了金刚石颗粒，但稀土功率印模加速了成核密度和生长速度。在400℃高温下，用细小的金刚石颗粒划伤Mo衬底，快速形成高质量的金刚石薄膜。C（基板背面），射频功率为300W （13.56MHz）。在几乎相同的条件下，在较低的衬底温度下，在Cu衬底上也可以形成高质量的金刚石薄膜。高频率（27.12 MHz）或高功率压痕会使金刚石膜质量变差。在射频氮乙炔等离子体中碳氮化钛衬底可加快金刚石颗粒和金刚石膜的生长速度。因此，这种预处理与燃烧火焰等离子体的射频压印相结合，对于在某些衬底上快速生长金刚石是非常有效的。

It has been reported that diamond film can be deposited in the atmospheric ambient by a simple CVD technique using a combustion flame using acetyleneoxygen as starting materials. In our experiment, RF electric power was coupled with the combustion flame inductively to excite the flame as a plasma.Mo, Cu, or Ti substrate was placed on a water-cooled copper stage under the combustion flame which was excited with RF popwer supplied through a copper workcoil. Only diamond particles was deposited on the polished mirror surface of Mo or Cu substrate, but the nucleation density and the growth rate were accelerated with RE power impression. High quality diamond film was rapidly formed on Mo substrate scratched with fine diamond particles at 400。C (at the rear side of the substrate) with 300W RF power (13.56MHz). High quality diamond film was also formed on Cu substrate at almost same condition, but at lower substrate temperatures. The quality of diamond film was deteriorated with higher frequency (27.12 MHz) or higher power impression. The growth rates of diamond particles and diamond film were accelerated by using Ti substrate carbonitrided in RF nitrogen-acetylene plasma. Accordinly, a combination of such pretreatment and RF impression to combustion flame plasma must be very effective for rapid growth of diamond on some kinds of substrates.