PREPARATION OF SUPER PLASTICITY TITANIA BY CHEMICAL VAPOR DEPOSITION

化学气相沉积法制备超塑性二氧化钛

• 批准号: 04555228
• 负责人: KOMIYAMA Hiroshi
• 金额: $ 4.54万
• 依托单位: THE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555228/
• 关键词: Superplasticity; Titania; Chemical Vapor Deposition; Nanoceramics; ケミカル・ベイパー・デポジション法; ケミカル・ベーパー・デポジション; ナノ構造材料

It has been shown theoretically and experimentally that ceramic consisted of nanometer size grains (so-called nano-ceramic materials) overcame the characteristics of brittle which is the main drawback of the normal ceramics materials, and had high toughness. There has been a high expectation of its application for superior heat resistance and corrosion resistance, however, ceramic materials have not been put into practical materials because of the lower reliability as brittleness. We have been trying to do fundamental studies to create a novel mass-productive technology to make such nano-ceramic materials.The film growth of titania (TiO_2) series nano-ceramic material was tried by chemical vapor deposition (CVD) method in this research. Titanium tetra iso-propoxide (TTIP) is used in the conventional TiO_2-CVD process, however we found that replacement of TTIP with bis(dipivaloylmetanoto) diisopropoxide titanium (Ti(DPM)_2(O-iPr)_2) compound increases stability of reaction and controlla … More bility.In the second year, the new component materials such as Sr and Pb was added and its effect was examined. Our experimental results revealed that the added Pb compound reduced the secondary nucleation process. The recent greatest important issue is to control the grain size of the deposited film, it's also the aim of this research. It's said generally that the grain size of the deposited film was dominated the competition of the secondary nucleation rate and the film growth rate. However, these two rates were changed easily by various experimental conditions, so the control of the grain size has very difficulty. In the film forming process without secondary nucleation, it's known that the initial nucleation density as well as film thickness can dominate the grain size of the film. It's also shown that the fixed experimental condition which gives the most suitable initial nucleation density, and freely selectable deposition time provide us the controllability of the grain size. In conclusion, we have elucidated the novel way to control the grain size of the deposited films in CVD ceramics process. Less

理论和实验研究表明，由纳米晶粒组成的陶瓷（即所谓的纳米陶瓷材料）克服了普通陶瓷材料脆性大的缺点，具有很高的韧性。陶瓷材料因其上级的耐热性和耐腐蚀性而被广泛应用，但陶瓷材料脆性大、可靠性低，一直没有应用于实际材料中。本研究尝试用化学气相沉积法（CVD）制备二氧化钛（TiO_2）系纳米陶瓷材料薄膜。在传统的TiO_2-CVD工艺中使用的是四异丙醇钛（TTIP），但我们发现用双（二新戊酰间氨基）二异丙醇钛（Ti（NO_3）_2（O-iPr）_2）化合物代替TTIP，可以提高反应的稳定性和可控性 ...更多信息 在第二年，添加了新的组分材料如Sr和Pb，并检查其效果。实验结果表明，铅化合物的加入减少了二次成核过程。控制沉积薄膜的晶粒尺寸是目前最重要的课题，也是本课题研究的目的。一般认为，沉积膜的晶粒尺寸主要取决于二次形核速率和膜生长速率的竞争。但是，这两个比例很容易受各种实验条件的影响而变化，因此晶粒尺寸的控制非常困难。在无二次成核的成膜过程中，初始成核密度和膜厚对膜层晶粒尺寸起决定性作用。实验结果还表明，固定的实验条件，给出了最合适的初始形核密度，和自由选择的沉积时间提供了我们的晶粒尺寸的可控性。总之，我们已经阐明了新的方法来控制沉积膜的晶粒尺寸在CVD陶瓷工艺。少

项目成果

L.-S.Hong: "Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH_4 and C_3H_8" Proc.of the 12th International Symp.on CVD. 401-407 (1993)

L.-S.Hong：“SiH_4 和 C_3H_8 化学气相沉积法外延生长 SiC 薄膜中薄膜前驱体的粘着概率”第 12 届国际 CVD 研讨会论文集。

金 煕濱: "常圧熱CVDによるAlN膜合成における配向性の制御" 化学工学論文集. 18. 622-628 (1992)

Hee-bin Kim：“通过常压热 CVD 控制 AlN 薄膜合成中的取向”《化学工程杂志》18. 622-628 (1992)。

小宮山 宏: "CVDハンドブック" 朝倉書店, 800 (1991)

小宫山浩：《CVD手册》朝仓书店，800（1991）

L.-S.Hong: "Sticking Probability of the Film Precarsor in Epitaxial Growth of SiC Films by the mical Vapor Deposition from SiH_4 and C_3H_8." Proc.of the 12th International Symp.on CVD. 401-407 (1993)

L.-S.Hong：“通过 SiH_4 和 C_3H_8 的硅气相沉积外延生长 SiC 薄膜中薄膜前体的粘附概率”。

M.Ihara: "Low-Temperature Deposition of Diamond in a Temperature Range from 70* to 700*" Diamond and Related Materials. 1. 187-190 (1992)

M.Ihara：“70* 至 700* 温度范围内的金刚石低温沉积”金刚石及相关材料。