Analisys of CVD Process in Nano-Structured Ferro-Electric Thin Films

纳米结构铁电薄膜 CVD 工艺分析

• 批准号: 06555232
• 负责人: KOMIYAMA Hiroshi
• 金额: $ 9.15万
• 依托单位: The Univ.of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555232/
• 关键词: CVD; Nanostructure; Ferro-electric thin film; Organo-metalic; ナノ構造

In 1994, focused on the control ability of solid source, metal-organic complex compound, hot wall CVD rector with new source gas controller was designed and prepared. From In-suit measurement of solid source amount with micro-balance, high stability control of source gas were obtained.In 1995, analysis on the reaction mechanism and properties of high-dielectric films were performed. In PbTiO3 system, the self-designed stoichiometric composition controlled mechanism were observed under excess Pb source gas concentration condition. The kinetically analysis showed by the high vapor pressure of lead oxide deposition of stoikiometric reacted titanium and lead oxide caused this self-designed stoikiometric mechanism. From the growth rate distribution profile measurement in the reactor, ratelimiting processes of both PbTiO3 and TiO2 deposition systems were determined as mass-transfer processes. The film growth species size of each systems were estimated from mass-transfer coefficient. The difference of each film growth species size indicated the gas-phase reaction of Ti source and Pb source gas.These reaction mechanism analysis determined the reaction conditions.

1994年，针对固体源、金属有机络合物的控制能力，设计并研制了具有新型源气控制器的热壁CVD反应器。1995年，对高介电薄膜的反应机理和性能进行了分析。在PbTiO3体系中，在过量Pb源气浓度条件下，观察到了自设计的化学计量比控制机制。动力学分析表明，这种化学计量机理是由钛和氧化铅化学计量反应后的高蒸气压导致的。从生长速率分布曲线的测量在反应器中，速率限制过程的PbTiO 3和TiO 2沉积系统被确定为传质过程。根据传质系数估算了各体系的膜生长物种尺寸。薄膜生长过程中各组分尺寸的差异表明Ti源和Pb源气体发生了气相反应，反应机理分析确定了反应条件。

项目成果

Y.J.Liu: ""Using simultaneous deposition and rapid growth to produre nano-structured composite films of AlN/TiN by Chemical Vapor Deposition"" J.Am.Ceram.Soc. (in press).

Y.J.Liu：“通过化学气相沉积同时沉积和快速生长制备 AlN/TiN 纳米结构复合薄膜”J.Am.Ceram.Soc。

S.Murayama: ""Reaction Mechanism of Preperation Ferro-Electric Material Film by Chemical Vapor Deposition"" Proc.of the 61st conf.of SCEJ,G307 Nagoya, (Apr.1996).

S.Murayama：“通过化学气相沉积制备铁电材料薄膜的反应机理”，第 61 届 SCEJ 会议论文集，G307 名古屋，（1996 年 4 月）。

Y. J. Liu.: "Suppressing the formation of cone structures in Chemical-Vapor-Deposit AlN/TiN films" J. Am, Ceram Soc.79(印刷中). (1996)

Y. J. Liu.：“抑制化学气相沉积 AlN/TiN 薄膜中锥体结构的形成”J. Am，Ceram Soc.79（出版中）。

H.Komiyama: ""Chemical Reaction Engineering as a Fundamental Engineering"" KAGAKU KOGAKU. 59, (7). 504-507 (1995)

H.Komiyama：“化学反应工程作为基础工程”KAGAKU KOGAKU。

小宮山宏: "反応工学-反応装置から地球まで-" 培風館, 145 (1995)

小宫山浩：“反应工程 - 从反应堆到地球 -”Baifukan，145（1995）