Analisys of CVD Process in Nano-Structured Ferro-Electric Thin Films

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In 1994, focused on the control ability of solid source, metal-organic complex compound, hot wall CVD rector with new source gas controller was designed and prepared. From In-suit measurement of solid source amount with micro-balance, high stability control of source gas were obtained.In 1995, analysis on the reaction mechanism and properties of high-dielectric films were performed. In PbTiO3 system, the self-designed stoichiometric composition controlled mechanism were observed under excess Pb source gas concentration condition. The kinetically analysis showed by the high vapor pressure of lead oxide deposition of stoikiometric reacted titanium and lead oxide caused this self-designed stoikiometric mechanism. From the growth rate distribution profile measurement in the reactor, ratelimiting processes of both PbTiO3 and TiO2 deposition systems were determined as mass-transfer processes. The film growth species size of each systems were estimated from mass-transfer coefficient. The difference of each film growth species size indicated the gas-phase reaction of Ti source and Pb source gas.These reaction mechanism analysis determined the reaction conditions.