DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS

高效布拉格折射光栅玻璃的开发

• 批准号: 05555235
• 负责人: HOSONO Hideo
• 金额: $ 4.48万
• 依托单位: RESEARCH LABORATORY OF ENGINEERING MATERIALS
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555235/
• 关键词: Bragg gratings; GeO_2-SiO_2 glasses; defects in glass; glasses; photosensitivity; optical changes; 光化学反応; 光誘起反応; グレーティング; GeO_2; フォトリフラクティブ材料

(1) Origin of photo-induced refractive index changes(PIRC)in GeO_2-SiO_2 glasses were found to be due to photochemical conversion of an oxygen vacancy(neutral oxygen monovacancy, NOMV,)coordinated by two Ge^<4+> ions into a GeE'center which has an intense absorption band at around 6eV.Thus, we concluded that enhancement of the NOMV leads to that of photosensitivity in SiO_2 : Ge glasses.(2) Heat treatment of SiO_2 : Ge glasses in a H_2 atmosphere at 500 C,which is far below Tg, for 70 hincreased selectively the concentrations of the NOMV by an order of magnitude.(3) It was found that concentrations of the NOMV were enhanced by one or two orders of magnitude by rf-sputtered deposited thin glass films of SiO_2 : Ge by heating at 350C for 30 min in vacuum.(4) Concentrations of the NOMV were successfully enhanced over 3 to 4 orders of magnitude by implanting protons into SiO_2 : Ge glasses. Photobleachable optical band peaking at 5 eV were created in SiO_2 glasses implanted with implanted ions with electropositive nature such as P and B.These bands were simply bleached with illumination with 5 ev light and no formation of Si E' center was seen. The former and the latter gave positive and negative refractive index changes after uvbleaching.(5) Although various optical bands associated with Al ions were identified in synthetic SiO_2 : Alglasses irradiated with gamma and excimer lasers, none of the bands showed photobleaching nature.

（1）发现GEO_2-SIO_2玻璃杯中光诱导的折射率变化（PIRC）的起源是由于光化学空位的光化学转化（中性氧单影，nomv，nomv）由两个GE^<4+>离子协调到gee'smenter中，该中心具有激烈的吸收。 SIO_2：GE眼镜中的光敏性。（2）SIO_2：在500°C下的H_2氛围中的GE玻璃的热处理（远低于Tg），对于70个振奋人数，选择性地降低了Nomv的浓度，该命名的浓度是通过一个或两种尺寸的尺寸来提高imv的浓度。 （4）NOMV的浓度在350℃下加热30分钟。通过将质子植入SIO_2：GE玻璃杯，在3至4个数量级上成功增强了3至4个数量级。在5 eV处的可将光波带峰值在植入具有电阳性性质的植入离子（例如P和B）的SiO_2玻璃杯中创建，这些带有5 eV光的照明且没有形成Si e'中心。前者和后者在紫红色后产生了正和负折射率的变化。（5）尽管在合成的SIO_2：用伽玛和先例激光器照射的alglasses中鉴定出了与Al离子相关的各种光带，但频段都没有显示出光泽的性质。

项目成果

細野秀雄: "Preferred Concentration Enhancement of Photobleachable Defects Responsible for 5eV Optical Band in SiO_2:GeO_2 Glass Preform by Heating in a H_2 Atmospheremosphere" Appl.Phys.Let.63. 479-481 (1993)

Hideo Hosono：“通过在 H_2 气氛中加热来增强 SiO_2:GeO_2 玻璃预制件中导致 5eV 光带的光漂白缺陷的首选浓度”Appl.Phys.Let.63 (1993)。

細野秀雄、川副博司、大吉啓司: "Paramagnebe resonance of E^'-type ceitons in Si-implanted amorpbure SiO_2" Journal of Non-Crystalline Solids. 179. 39-50 (1994)

Hideo Hosono、Hiroshi Kawazoe、Keiji Daiyoshi：“Si-implanted amorpbure SiO_2 中 E^ 型硅石的 Paramagnebe 共振”非晶固体杂志 179. 39-50 (1994)。

西井準治: "Photocbomical reactions in GeO_2-SiO_2 glasses : Comparison between Hg lamp and excimer lasers" Physical Review B. (印刷中). (1995)

Junji Nishii：“GeO_2-SiO_2 玻璃中的光化学反应：汞灯和准分子激光器之间的比较”物理评论 B.（出版中）。

K.Awazu, H.Hosono and H.Kawazoe: "Chemical reactions of Ge-related species in SiO_2 : Ge optical fibers" SPIE proceedings. vo1.2044. 78-87 (1993)

K.Awazu、H.Hosono 和 H.Kawazoe：“SiO_2 中与 Ge 相关的物质的化学反应：Ge 光纤”SPIE 论文集。

H.Hosono and K.Muta: "Preferred concentration enhancement of photobleachable defects responsible for 5eV band in SiO_2 : GeO_2 glass preform y heating in a H_2 atmosphere" Applied Physics Letters. 63. 479-481 (1993)

H.Hosono 和 K.Muta：“在 H_2 气氛中加热 SiO_2 中导致 5eV 波段的光漂白缺陷的首选浓度增强：GeO_2 玻璃预制件”《应用物理快报》。