DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS

高效布拉格折射光栅玻璃的开发

• 批准号: 05555235
• 负责人: HOSONO Hideo
• 金额: $ 4.48万
• 依托单位: RESEARCH LABORATORY OF ENGINEERING MATERIALS
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555235/
• 关键词: Bragg gratings; GeO_2-SiO_2 glasses; defects in glass; glasses; photosensitivity; optical changes; 光化学反応; 光誘起反応; グレーティング; GeO_2; フォトリフラクティブ材料

(1) Origin of photo-induced refractive index changes(PIRC)in GeO_2-SiO_2 glasses were found to be due to photochemical conversion of an oxygen vacancy(neutral oxygen monovacancy, NOMV,)coordinated by two Ge^<4+> ions into a GeE'center which has an intense absorption band at around 6eV.Thus, we concluded that enhancement of the NOMV leads to that of photosensitivity in SiO_2 : Ge glasses.(2) Heat treatment of SiO_2 : Ge glasses in a H_2 atmosphere at 500 C,which is far below Tg, for 70 hincreased selectively the concentrations of the NOMV by an order of magnitude.(3) It was found that concentrations of the NOMV were enhanced by one or two orders of magnitude by rf-sputtered deposited thin glass films of SiO_2 : Ge by heating at 350C for 30 min in vacuum.(4) Concentrations of the NOMV were successfully enhanced over 3 to 4 orders of magnitude by implanting protons into SiO_2 : Ge glasses. Photobleachable optical band peaking at 5 eV were created in SiO_2 glasses implanted with implanted ions with electropositive nature such as P and B.These bands were simply bleached with illumination with 5 ev light and no formation of Si E' center was seen. The former and the latter gave positive and negative refractive index changes after uvbleaching.(5) Although various optical bands associated with Al ions were identified in synthetic SiO_2 : Alglasses irradiated with gamma and excimer lasers, none of the bands showed photobleaching nature.

(1)发现GeO_2-SiO_2玻璃中光致折射率变化（PIRC）的起因是由两个Ge^<4+>离子配位的氧空位（NOMV）光化学转化为在6 eV附近有强吸收带的GeE'中心，从而得出NOMV增强导致SiO_2：Ge玻璃光敏性增强的结论。(2)SiO_2：Ge玻璃在500 ℃（远低于玻璃的Tg）的H_2气氛中热处理70 h，选择性地使NOMV浓度增加一个数量级。(3)在350 ℃真空中加热30分钟，用射频溅射法沉积SiO_2：Ge玻璃薄膜，NOMV浓度可提高一至两个数量级。(4)质子注入SiO_2：Ge玻璃后，NOMV浓度提高了3 ~ 4个数量级。在注入P和B等正电性离子的SiO_2玻璃中产生了峰值为5 eV的可光漂白光学带。这些带在5 eV光照射下简单地漂白，没有观察到Si E'中心的形成。前者和后者在紫外漂白后均产生正折射率变化和负折射率变化。(5)在γ激光和准分子激光辐照下，合成SiO_2：Al玻璃中出现了各种与Al离子有关的光学带，但没有一个带显示出光漂白性质。

项目成果

細野秀雄: "Preferred Concentration Enhancement of Photobleachable Defects Responsible for 5eV Optical Band in SiO_2:GeO_2 Glass Preform by Heating in a H_2 Atmospheremosphere" Appl.Phys.Let.63. 479-481 (1993)

Hideo Hosono：“通过在 H_2 气氛中加热来增强 SiO_2:GeO_2 玻璃预制件中导致 5eV 光带的光漂白缺陷的首选浓度”Appl.Phys.Let.63 (1993)。

西井準治: "Photocbomical reactions in GeO_2-SiO_2 glasses : Comparison between Hg lamp and excimer lasers" Physical Review B. (印刷中). (1995)

Junji Nishii：“GeO_2-SiO_2 玻璃中的光化学反应：汞灯和准分子激光器之间的比较”物理评论 B.（出版中）。

細野秀雄、川副博司、大吉啓司: "Paramagnebe resonance of E^'-type ceitons in Si-implanted amorpbure SiO_2" Journal of Non-Crystalline Solids. 179. 39-50 (1994)

Hideo Hosono、Hiroshi Kawazoe、Keiji Daiyoshi：“Si-implanted amorpbure SiO_2 中 E^ 型硅石的 Paramagnebe 共振”非晶固体杂志 179. 39-50 (1994)。

細野秀雄、川副博司: "Radiation-induced coloryng and paramayetic centers in syniheyic SiO_2: A1 glasses" Nacleas Instraments and Methods B. 91. 395-399 (1994)

Hideo Hosono、Hiroshi Kawazoe：“同质 SiO_2: A1 玻璃中的辐射诱导着色和副中心”Nacleas 仪器和方法 B. 91. 395-399 (1994)

H.Hosono and K.Muta: "Preferred concentration enhancement of photobleachable defects responsible for 5eV band in SiO_2 : GeO_2 glass preform y heating in a H_2 atmosphere" Applied Physics Letters. 63. 479-481 (1993)

H.Hosono 和 K.Muta：“在 H_2 气氛中加热 SiO_2 中导致 5eV 波段的光漂白缺陷的首选浓度增强：GeO_2 玻璃预制件”《应用物理快报》。