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Electronic Transport Properties of Transpatent Conducting Amorphous materials

透明导电非晶材料的电子传输特性

基本信息

批准号：
10450241
负责人：
HOSONO Hideo
金额：
$ 8.58万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :(1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.(2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.(3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.(4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.

这项研究的主要目的是考察透明导电非晶态半导体材料的电子输运性质，我们发现了以下工作假设来探索候选材料。(1)利用德鲁德方法成功地分析了简并透明导电非晶态氧化物2CdOGeOィイD22ィエD2和CDO-PbOィイD22ィエD2中的自由载流子吸收，吸收可以用单一弛豫时间来描述。(2)非晶态2CdO-GeOィイD22ィエD2薄膜的X射线结构分析表明，CdィイD12+ィエD1或GeィイD14+ィエD1离子周围的局域结构与晶体CdィイD22ィエD2GeO4(具有橄榄型结构)的局域结构相似。(3)非晶态WOィイD23ィエD2通过HィイD1+ィエD1的离子注入转变为简并半导态，HeィイD_1+ィエD_1+或WィイD_1+ィエD_1。(4)通过扩展我们的工作假设，探索透明导电非晶氧化物，发现了一种N型高导非晶质半导体。Cd-In-S薄膜的电导率为10ィイD_1~(-1)ィエD_1，ィイD_1~(-1)ィエD_1，负的塞贝克系数和霍尔系数，这是首次证明了高度N型导电的非晶态半导体。