Electronic Transport Properties of Transpatent Conducting Amorphous materials
透明导电非晶材料的电子传输特性
基本信息
- 批准号:10450241
- 负责人:
- 金额:$ 8.58万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1998
- 资助国家:日本
- 起止时间:1998 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :(1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.(2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.(3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.(4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.
这项研究的主要目的是考察透明导电非晶态半导体材料的电子输运性质,我们发现了以下工作假设来探索候选材料。(1)利用德鲁德方法成功地分析了简并透明导电非晶态氧化物2CdOGeOィイD22ィエD2和CDO-PbOィイD22ィエD2中的自由载流子吸收,吸收可以用单一弛豫时间来描述。(2)非晶态2CdO-GeOィイD22ィエD2薄膜的X射线结构分析表明,CdィイD12+ィエD1或GeィイD14+ィエD1离子周围的局域结构与晶体CdィイD22ィエD2GeO4(具有橄榄型结构)的局域结构相似。(3)非晶态WOィイD23ィエD2通过HィイD1+ィエD1的离子注入转变为简并半导态,HeィイD_1+ィエD_1+或WィイD_1+ィエD_1。(4)通过扩展我们的工作假设,探索透明导电非晶氧化物,发现了一种N型高导非晶质半导体。Cd-In-S薄膜的电导率为10ィイD_1~(-1)ィエD_1,ィイD_1~(-1)ィエD_1,负的塞贝克系数和霍尔系数,这是首次证明了高度N型导电的非晶态半导体。
项目成果
期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K. Tanaka and H. Hosono: "Photoconduction in Muticomponent Oxide Glasses"J. Non-Cryst. Sol.. 224. 43 (1998)
K. Tanaka 和 H. Hosono:“多组分氧化物玻璃中的光电导”J。
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- 影响因子:0
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- 通讯作者:
細野秀雄: "Formation of Electric Conducting Amorphous WO_3 Thin Films by Ion Implantation"J. Non-Cryst. Sol.. 241. 190 (1998)
Hideo Hosono:“通过离子注入形成导电非晶 WO_3 薄膜”J. 241. 190 (1998)
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- 影响因子:0
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H. Hosono, M. Miyakawa, H. Kawazoe: "Formation of Electric Conducting Amorphous WOィイD23ィエD2 Thin Films by Ion implantation"J. Non-Cryst. Sol.. 241. 190 (1998)
H. Hosono、M. Miyakawa、H. Kawazoe:“通过离子注入形成导电非晶 WO D23 薄膜”J. Non-Cryst.. 241. 190 (1998)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
細野秀雄: "N-type Conducting Amorphous Chalcogenide Cd-In-S"J. Non-Cryst. Sol.. 227. 804 (1998)
Hideo Hosono:“N 型导电非晶硫属化物 Cd-In-S”J. 227. 804 (1998)
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- 影响因子:0
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嶋川晃一: "Electronic Transport in Degenerate Amorphous Oxide Semiconductors"Philos. Mag. Lett.. 79. 755 (1999)
Koichi Shimakawa:“简并非晶氧化物半导体中的电子传输”Lett.. 79. 755 (1999)
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HOSONO Hideo其他文献
Ammonia Decomposition Mediated by Anion Vacancy at the Interface between CaNH with a Rock Salt Structure and Ni Nanoparticle
岩盐结构 CaNH 与 Ni 纳米粒子界面阴离子空位介导的氨分解
- DOI:
10.5940/jcrsj.64.160 - 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
OGASAWARA Kiya;KITANO Masaaki;HOSONO Hideo - 通讯作者:
HOSONO Hideo
HOSONO Hideo的其他文献
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{{ truncateString('HOSONO Hideo', 18)}}的其他基金
Function cultivation in abundant oxide utilizing nano-structures and active anion species
利用纳米结构和活性阴离子物种在丰富的氧化物中进行功能培养
- 批准号:
16GS0205 - 财政年份:2004
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Creative Scientific Research
DEVELOPMENT OF OPTICAL FIBERS FOR DEEP UV LIGHT
深紫外光光纤的开发
- 批准号:
13555240 - 财政年份:2001
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Transparent long lasting and photo-stimulating materiaals
透明、持久、光刺激材料
- 批准号:
11555234 - 财政年份:1999
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Development of Highly Photosensitive Silica-based Glasses by Doping and Application to Devices
通过掺杂开发高感光二氧化硅基玻璃及其在器件中的应用
- 批准号:
09555197 - 财政年份:1997
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography
电子束光刻用新型透射导电氧化物薄膜的制备与评价
- 批准号:
07555668 - 财政年份:1995
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Creation of Novel Quantum Dot embedded in Glasses by Ion Implantation and Their Optical Properties
通过离子注入制造嵌入玻璃的新型量子点及其光学特性
- 批准号:
06453120 - 财政年份:1994
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS
高效布拉格折射光栅玻璃的开发
- 批准号:
05555235 - 财政年份:1993
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Examination of Possibility of Formation of Aggregated Color Centers in Inorganic Glasses and Their Application to Photochemical Hole Burning
无机玻璃中聚集色心形成的可能性及其在光化学烧孔中的应用
- 批准号:
01550597 - 财政年份:1989
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)