Electronic Transport Properties of Transpatent Conducting Amorphous materials

透明导电非晶材料的电子传输特性

基本信息

  • 批准号:
    10450241
  • 负责人:
  • 金额:
    $ 8.58万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 1999
  • 项目状态:
    已结题

项目摘要

The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :(1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.(2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.(3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.(4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.
本研究的主要目的是研究透明导电非晶半导体材料的电子输运性质,我们发现了以下我们的工作假设,以探索候选材料。(1)利用Drude公式成功地分析了简并透明导电非晶氧化物2CdOGeO非晶D22和CdO-PbO非晶D22的自由载流子吸收,其吸收可用单一的弛豫时间来描述。提取了与电子输运相关的基本参数,如平均自由程、有效质量和微观迁移率。(2)X射线结构分析表明,非晶2CdO-GeO双晶D22双晶D2薄膜中Cd双晶D12+ Ge双晶D1或Ge双晶D14+ Ge双晶D1离子的局域结构与n型半导体晶体Cd双晶D22双晶D2 GeO 4(具有橄榄型结构)中的局域结构相似。(3)非晶WO_(23)O_(23)O_(23)D_2经H_(23)D_1 + H_(23)D_1、He_(23)D_1 + H_(23)D_1或W_(23)D_1 + H_(23)D_1离子注入后转变为简并半导体态。(4)将我们的工作假设扩展到探索透明导电非晶氧化物,发现了一种N型高导电非晶chacogenide半导体。Cd-In-S薄膜的电导率为10 Ω D_(1 -1)Ω D_(1 -1)Scm Ω D_(1 -1)Ω D_(1 - 1),Seebeck系数和Hall系数为负值,这是高N型导电非晶半导体的首次证实。

项目成果

期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K. Tanaka and H. Hosono: "Photoconduction in Muticomponent Oxide Glasses"J. Non-Cryst. Sol.. 224. 43 (1998)
K. Tanaka 和 H. Hosono:“多组分氧化物玻璃中的光电导”J。
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    0
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細野秀雄: "Formation of Electric Conducting Amorphous WO_3 Thin Films by Ion Implantation"J. Non-Cryst. Sol.. 241. 190 (1998)
Hideo Hosono:“通过离子注入形成导电​​非晶 WO_3 薄膜”J. 241. 190 (1998)
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    0
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H. Hosono, M. Miyakawa, H. Kawazoe: "Formation of Electric Conducting Amorphous WOィイD23ィエD2 Thin Films by Ion implantation"J. Non-Cryst. Sol.. 241. 190 (1998)
H. Hosono、M. Miyakawa、H. Kawazoe:“通过离子注入形成导电​​非晶 WO D23 薄膜”J. Non-Cryst.. 241. 190 (1998)
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    0
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細野秀雄: "N-type Conducting Amorphous Chalcogenide Cd-In-S"J. Non-Cryst. Sol.. 227. 804 (1998)
Hideo Hosono:“N 型导电非晶硫属化物 Cd-In-S”J. 227. 804 (1998)
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  • 影响因子:
    0
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嶋川晃一: "Electronic Transport in Degenerate Amorphous Oxide Semiconductors"Philos. Mag. Lett.. 79. 755 (1999)
Koichi Shimakawa:“简并非晶氧化物半导体中的电子传输”Lett.. 79. 755 (1999)
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    0
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HOSONO Hideo其他文献

Ammonia Decomposition Mediated by Anion Vacancy at the Interface between CaNH with a Rock Salt Structure and Ni Nanoparticle
岩盐结构 CaNH 与 Ni 纳米粒子界面阴离子空位介导的氨分解
  • DOI:
    10.5940/jcrsj.64.160
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    OGASAWARA Kiya;KITANO Masaaki;HOSONO Hideo
  • 通讯作者:
    HOSONO Hideo

HOSONO Hideo的其他文献

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{{ truncateString('HOSONO Hideo', 18)}}的其他基金

Function cultivation in abundant oxide utilizing nano-structures and active anion species
利用纳米结构和活性阴离子物种在丰富的氧化物中进行功能培养
  • 批准号:
    16GS0205
  • 财政年份:
    2004
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Creative Scientific Research
DEVELOPMENT OF OPTICAL FIBERS FOR DEEP UV LIGHT
深紫外光光纤的开发
  • 批准号:
    13555240
  • 财政年份:
    2001
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Transparent long lasting and photo-stimulating materiaals
透明、持久、光刺激材料
  • 批准号:
    11555234
  • 财政年份:
    1999
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Development of Highly Photosensitive Silica-based Glasses by Doping and Application to Devices
通过掺杂开发高感光二氧化硅基玻璃及其在器件中的应用
  • 批准号:
    09555197
  • 财政年份:
    1997
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography
电子束光刻用新型透射导电氧化物薄膜的制备与评价
  • 批准号:
    07555668
  • 财政年份:
    1995
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Creation of Novel Quantum Dot embedded in Glasses by Ion Implantation and Their Optical Properties
通过离子注入制造嵌入玻璃的新型量子点及其光学特性
  • 批准号:
    06453120
  • 财政年份:
    1994
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS
高效布拉格折射光栅玻璃的开发
  • 批准号:
    05555235
  • 财政年份:
    1993
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Examination of Possibility of Formation of Aggregated Color Centers in Inorganic Glasses and Their Application to Photochemical Hole Burning
无机玻璃中聚集色心形成的可能性及其在光化学烧孔中的应用
  • 批准号:
    01550597
  • 财政年份:
    1989
  • 资助金额:
    $ 8.58万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
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