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Electronic Transport Properties of Transpatent Conducting Amorphous materials

透明导电非晶材料的电子传输特性

基本信息

批准号：
10450241
负责人：
HOSONO Hideo
金额：
$ 8.58万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :(1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.(2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.(3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.(4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.

本研究的主要目的是研究透明导电非晶半导体材料的电子输运性质，我们发现了以下我们的工作假设，以探索候选材料。（1）利用Drude公式成功地分析了简并透明导电非晶氧化物2CdOGeO非晶D22和CdO-PbO非晶D22的自由载流子吸收，其吸收可用单一的弛豫时间来描述。提取了与电子输运相关的基本参数，如平均自由程、有效质量和微观迁移率。(2)X射线结构分析表明，非晶2CdO-GeO双晶D22双晶D2薄膜中Cd双晶D12+ Ge双晶D1或Ge双晶D14+ Ge双晶D1离子的局域结构与n型半导体晶体Cd双晶D22双晶D2 GeO 4（具有橄榄型结构）中的局域结构相似。(3)非晶WO_（23）O_（23）O_（23）D_2经H_（23）D_1 + H_（23）D_1、He_（23）D_1 + H_（23）D_1或W_（23）D_1 + H_（23）D_1离子注入后转变为简并半导体态。(4)将我们的工作假设扩展到探索透明导电非晶氧化物，发现了一种N型高导电非晶chacogenide半导体。Cd-In-S薄膜的电导率为10 Ω D_（1 -1）Ω D_（1 -1）Scm Ω D_（1 -1）Ω D_（1 - 1），Seebeck系数和Hall系数为负值，这是高N型导电非晶半导体的首次证实。