Electronic Transport Properties of Transpatent Conducting Amorphous materials

本研究的主要目标是对透明导电非导电材料的实验电子传输性能的研究，我们在哪里找到了以下我们的工作假说来探索候选材料。以下获得的结果被归纳为：（1）脱基因透明反应中的自由载体吸收，2CdOGeOy D22 y D2和CdO-PbO y D22 y D2，成功地分析了使用药物形成和吸收可以通过单一放松时间来描述。与电子传输相关的基本参数，即平均自由路径、有效质量和微观移动性被提取。（2） X-ray structural analysis of amorphous 2 CdO-GeOイD22イD2 thin films revealed that local structure around CdイD12+イD1 or GeイD14+イD1 ion were similar to that in the crystalline CdイD22イD2GeO4 （with olive type structure） which is a n-type semiconductor。（3） Amorphous WOイイD23イイD2 was converted into degenerate semi-conducting state by ion implantation of HイイD1+イイD1， HeイD1+イイD1+ or WイD1+イイD1。（4）一种N型高导电性非正氯代化合物半导体被发现是通过扩展我们的工作hypothesis来探索透明导电非正氧化物。Thin films of Cd-In-S展示了10型D1-1型D1 Scm型D1-1型D1 and negative Seebeck and Hall coefficients，这是高N型导电非正半导体的第一个演示。

The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :(1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.(2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.(3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.(4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.