Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography

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The purpose of the present project was to prepare novel transpatrent conducting oxide thin films for electron beam lithography and to evaluate their optical transport properties.The primary results obtained are summarized as follows :(1) Highly electriconducting beta-Ga_2O_3 single crystal with the band gap of 4.8eV was sucessfully prepared by floating zone technique under a controlled atmosphere. Anisotropy of conductivity and optical band gap was reasonablly explained by atomic arrangement. The maximum conductivity at 300 K was 40 Scm^<-1> along b-axis.(2) Rf-sputtered thin films of MgIn_2O_4 with spinel type structure could be converted from insulating into highly conducting by doping of carrier electrons utilizing ion implantation of Li+or H^+. Efficiency of carrier generation was -20% in as-implanted state but could be increased to -80% by appropriate post annealing heat treatment of the implanted specimens.(3) Transparent conducting amorphous oxides were found. DC conductivity of amorphous thin films of CdO-GeO<@D22@>D2 was drastically increased from 10<@D1-9@>D1 to 10<@D12@>D1 Scm<@D1-1@>D1 without accompanying a significant decrease in visible transmission at 300 K by implanting H<@D1(]SY.+-。[)@>D1 or Li+ to a fluence of 2 x10<@D116@>D1 cm<@D1-2@>D1 at 70 keV.