Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography

电子束光刻用新型透射导电氧化物薄膜的制备与评价

• 批准号: 07555668
• 负责人: HOSONO Hideo
• 金额: $ 1.28万
• 依托单位: Okazaki National Research Institutes
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555668/
• 关键词: transparent conductor; oxides; conductors; wide gap oxides; thin films; 薄膜; ワイドギャップ半導体

The purpose of the present project was to prepare novel transpatrent conducting oxide thin films for electron beam lithography and to evaluate their optical transport properties.The primary results obtained are summarized as follows :(1) Highly electriconducting beta-Ga_2O_3 single crystal with the band gap of 4.8eV was sucessfully prepared by floating zone technique under a controlled atmosphere. Anisotropy of conductivity and optical band gap was reasonablly explained by atomic arrangement. The maximum conductivity at 300 K was 40 Scm^<-1> along b-axis.(2) Rf-sputtered thin films of MgIn_2O_4 with spinel type structure could be converted from insulating into highly conducting by doping of carrier electrons utilizing ion implantation of Li+or H^+. Efficiency of carrier generation was -20% in as-implanted state but could be increased to -80% by appropriate post annealing heat treatment of the implanted specimens.(3) Transparent conducting amorphous oxides were found. DC conductivity of amorphous thin films of CdO-GeO<@D22@>D2 was drastically increased from 10<@D1-9@>D1 to 10<@D12@>D1 Scm<@D1-1@>D1 without accompanying a significant decrease in visible transmission at 300 K by implanting H<@D1(]SY.+-。[)@>D1 or Li+ to a fluence of 2 x10<@D116@>D1 cm<@D1-2@>D1 at 70 keV.

本课题的目的是制备用于电子束光刻的新型透明导电氧化物薄膜，并对其光学输运性质进行评价，取得的主要结果如下：（1）在可控气氛下，采用浮区法成功地制备了带隙为4.8eV的高导电β-Ga_2 O_3单晶。电导率和光学带隙的各向异性由原子排列合理地解释。在300 K下，沿沿着b轴的最大电导率为40 Scm^2<-1>。(2)利用离子注入Li+或H^+来掺杂载流子电子，可以使具有尖晶石结构的MgIn_2O_4薄膜由绝缘转变为高导电。载流子产生效率在注入状态下为~ 20%，但通过对注入样品进行适当的后退火热处理可以提高到~ 80%。(3)CdO-GeO&lt;@D22@&gt;D2非晶薄膜的直流电导率在300 K下由10&lt;@D1-9@&gt;D1大幅度提高到10&lt;@D12@&gt;D1 Scm&lt;@D1-1@&gt;D1，而不伴随可见光透过率的显著降低。[）@&gt;D1或Li+在70 keV下达到2 × 10 &lt;@D116@&gt;D1 cm&lt;@D1-2@&gt;D1的通量。

项目成果

H.Hosono et al.: "Amorphous transparent electroconductor 2CdO・GeO_2" Applied Physics Letters. 67. 2663-2665 (1995)

H.Hosono 等人：“非晶透明导电体 2CdO・GeO_2”《应用物理快报》67. 2663-2665 (1995)。

H.Hosono et al.: "Fast Proton Conducting Glasses" J.Applied Physics. 81. 1296-1301 (1997)

H.Hosono 等人：“快速质子传导玻璃”J.应用物理学。

H.Hosono et al.: "Conversion of insulating thin films of MgIn_2O_4 into transparent conductors by ion implantation" Nucl.Instr.Meth.B. 106. 517-521 (1995)

H.Hosono 等人：“通过离子注入将 MgIn_2O_4 绝缘薄膜转化为透明导体”Nucl.Instr.Meth.B。

H.Hosono: "Amorphous transpatent electrconductor 2CdO・GeO_2" Applied Physics Letters. 67. 2663-2665 (1995)

H.Hosono：“非晶透明电导体 2CdO・GeO_2”《应用物理快报》67. 2663-2665 (1995)。

N・Ueda et al.: "Novel transparent semiconductor : MgIn_2O_4" Solid State Phenomena. 51-52. 317-322 (1996)

N. Ueda 等人：“新型透明半导体：MgIn_2O_4”固态现象 51-52 (1996)。