Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography

电子束光刻用新型透射导电氧化物薄膜的制备与评价

• 批准号: 07555668
• 负责人: HOSONO Hideo
• 金额: $ 1.28万
• 依托单位: Okazaki National Research Institutes
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555668/
• 关键词: transparent conductor; oxides; conductors; wide gap oxides; thin films; 薄膜; ワイドギャップ半導体

The purpose of the present project was to prepare novel transpatrent conducting oxide thin films for electron beam lithography and to evaluate their optical transport properties.The primary results obtained are summarized as follows :(1) Highly electriconducting beta-Ga_2O_3 single crystal with the band gap of 4.8eV was sucessfully prepared by floating zone technique under a controlled atmosphere. Anisotropy of conductivity and optical band gap was reasonablly explained by atomic arrangement. The maximum conductivity at 300 K was 40 Scm^<-1> along b-axis.(2) Rf-sputtered thin films of MgIn_2O_4 with spinel type structure could be converted from insulating into highly conducting by doping of carrier electrons utilizing ion implantation of Li+or H^+. Efficiency of carrier generation was -20% in as-implanted state but could be increased to -80% by appropriate post annealing heat treatment of the implanted specimens.(3) Transparent conducting amorphous oxides were found. DC conductivity of amorphous thin films of CdO-GeO<@D22@>D2 was drastically increased from 10<@D1-9@>D1 to 10<@D12@>D1 Scm<@D1-1@>D1 without accompanying a significant decrease in visible transmission at 300 K by implanting H<@D1(]SY.+-。[)@>D1 or Li+ to a fluence of 2 x10<@D116@>D1 cm<@D1-2@>D1 at 70 keV.

本项目的目的是准备用于电子束岩石摄影的新型转pation氧化膜薄膜并评估其光学传输性能。所获得的主要结果总结如下：（1）在浮动区域中，由4.8 ev成功制备了4.8EV的单晶体，从而使高度的电导beta-ga_2o_3单晶体在浮动区域中获得了控制。电导率和光条间隙的各向异性通过原子布置进行了合理的解释。沿B轴的300 K时的最大电导率为40 scm^<-1>。（2）MGIN_2O_4的RF输出的薄膜具有尖晶石类型结构，可以通过使用Li+或H^+的离子植入来转换为通过掺杂载体电子的掺杂来进行高度导电。在植入式状态下，载体的效率为-20％，但通过对植入的样品进行了适当的退火处理后，可以提高到-80％。（3）发现透明导电无定形的无定形氧化物。 CDO-GEO <@D22@> D2的无定形薄膜的DC电导率从10 <@d1-9@> D1急剧增加到10 <@d12@> d1@> d1，而无需植入H <@d1（]sy。d1@。+ - 。 cm <@d1-2@> d1在70 kev。

项目成果

H.Hosono et al.: "Amorphous transparent electroconductor 2CdO・GeO_2" Applied Physics Letters. 67. 2663-2665 (1995)

H.Hosono 等人：“非晶透明导电体 2CdO・GeO_2”《应用物理快报》67. 2663-2665 (1995)。

H.Hosono et al.: "Fast Proton Conducting Glasses" J.Applied Physics. 81. 1296-1301 (1997)

H.Hosono 等人：“快速质子传导玻璃”J.应用物理学。

H.Hosono: "Amorphous transpatent electrconductor 2CdO・GeO_2" Applied Physics Letters. 67. 2663-2665 (1995)

H.Hosono：“非晶透明电导体 2CdO・GeO_2”《应用物理快报》67. 2663-2665 (1995)。

H.Hosono et al.: "Conversion of insulating thin films of MgIn_2O_4 into transparent conductors by ion implantation" Nucl.Instr.Meth.B. 106. 517-521 (1995)

H.Hosono 等人：“通过离子注入将 MgIn_2O_4 绝缘薄膜转化为透明导体”Nucl.Instr.Meth.B。

H.Hosono: "New amorphous semiconductor:2CdO・PbO^x" Applied Physics Letters. 68. 661-663 (1996)

H.Hosono：“新型非晶半导体：2CdO・PbO^x”《应用物理快报》68. 661-663 (1996)。