Fabrication and monolithic integration of III-V semiconductor photonic devices using impurity-free interdiffusion

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Fabrication and monolithic integration of III-V semiconductor photonic devices using impurity-free interdiffusion. The objective of this project is to achieve the integration of GaAs- and InP-based photonic devices using the atomic interdiffusion technique. The project will use the key understanding of the atomic relocation process in the GaAs-based system, with novel laser designs. Furthermore, elucidating the more complicated interdiffusion mechanism in the InP-based system will be a precursor to device integration. This project also aims to understand the interdiffusion mechanism in quantum dot structures, which are important for high performance optoelectronic devices. The fabrication of novel photonic integrated circuits (PICs) will generate patentable technology, and enhance Australia's semiconductor optoelectronic and photonic industry.