III-V semiconductor nanowire solar cells without p-n junctions

无p-n结的III-V族半导体纳米线太阳能电池

• 批准号: DP150101107
• 负责人: Prof Chennupati Jagadish
• 金额: $ 47.94万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150101107
• 关键词: III; semiconductor; nanowire; solar; cells

This project proposes a new class of nanowire solar cells that do not rely on conventional electrical (p-n) junction for photo-generated charge carrier separation. Instead the band structure of the semiconductors is engineered to form a misalignment which leads to the spatial separation of carriers. This approach is expected to fundamentally change the design of solar cells, eliminating the technologically challenging need for forming good electrical junctions, while retaining all advantages inherent to III-V semiconductor nanowire solar cells. More importantly, the device concept proposed is expected to have implications for a wider class of solar cells based on exotic/novel materials or nanostructures where achieving both n- and p-doping may be challenging.

该项目提出了一类新的纳米线太阳能电池，不依赖于传统的电（p-n）结的光生电荷载流子分离。相反，半导体的能带结构被设计成形成导致载流子空间分离的未对准。这种方法有望从根本上改变太阳能电池的设计，消除形成良好电结的技术挑战性需求，同时保留III-V族半导体纳米线太阳能电池固有的所有优势。更重要的是，所提出的器件概念预计将对基于奇异/新型材料或纳米结构的更广泛类别的太阳能电池产生影响，其中实现n型和p型掺杂可能具有挑战性。