III-V semiconductor nanowire solar cells without p-n junctions

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This project proposes a new class of nanowire solar cells that do not rely on conventional electrical (p-n) junction for photo-generated charge carrier separation. Instead the band structure of the semiconductors is engineered to form a misalignment which leads to the spatial separation of carriers. This approach is expected to fundamentally change the design of solar cells, eliminating the technologically challenging need for forming good electrical junctions, while retaining all advantages inherent to III-V semiconductor nanowire solar cells. More importantly, the device concept proposed is expected to have implications for a wider class of solar cells based on exotic/novel materials or nanostructures where achieving both n- and p-doping may be challenging.