Research & development on advanced detectors for B-factories.
Research & development on advanced detectors for B-factories.
批准号:
05044063
负责人:
MATSUDA Takeshi
金额:
$2.88万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
National Laboratory for High Energy Physics, KEK,is building an asymmetricB-factory. The goal of the peak luminosity is 10^<34> cm^<-2> sec^<-1.> The BELLE collaboration builds a detector to study of CP violation in B meson decays. It is shown by Monte Carlo studies based on the current design of the BELLE detector that a definitive test of CP violation in the standard model may be possible by measuring the three angles and the three sides of the CKM triangles. To realize this goal, a good measurement of the B decay vertices and a excellent pi/K identification up to 4 GeV/c are necessary. We plan to build a Silicon micro Vertex Detector (SVD) made of Double-sided Silicon Strip Detectors (DSSD) with a Double-Metal Layr (DML) for the z-strip readout. In this project, we studied the optimized design of SVD at the KEK/B-factory and successfully performed R&D studies on large DSSD with DML,SVD readout electronics including new 128 channel low noise preamplifier VLSI's with analog memory, a new wireless bonding method for DSSD.As a candidate of the pi/K identification device of the BELLE experiment, in this project we assumed a fast Ring Image Cherenkov (RICH) counter and performed a intensive R&D on it. We obtained the 3sigmapi/K separation up to 2.86 GeV/c for a full size prototype of the fast RICH counter using the LiF radiator and a TEA/CH_4 gas mixture. We then tested two prototype RICH counters with different CsI photocathodes. Both detectors were operated successfully in beams observing expected Cherenkov rings. However the quantum efficiency of the CsI photocathode was found to be only about 10% in both cases while we need the value larger than 15%.
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Takashi Matsushita et,al.: "TOTAL DOSE EFFECTS OF GAMMA RAY IRRADIATION ON SOI MOS TRANSISTORS." KEK-PREPRINT-94-195,Feb 1995,19pp.Submitted to Nucl.Instrum.Meth.A.
Takashi Matsushita 等人:“伽玛射线辐照对 SOI MOS 晶体管的总剂量影响。”
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S.Okuno et,al.: "NEW INSULATOR FILM OF INTEGRATED CAPACTTOR FOR A SILICON STRIP DETECTOR." KEK-PREPRINT-93-169,Dec 1993,4pp.IEEE 1993 Nuclear Science Symposium and Medical Imaging Conference,San Francisco,CA,31 Oct-6 Nov 1993.
S.Okuno 等人:“用于硅条检测器的集成电容器的新型绝缘膜。”
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Takashi Matsushita et.al.: "RADIATION SUSCEPTIVITY OF A NONRAD-HARD 1.2-MICROMETER CMOS." KEK-PREPRINT-93-196A,Feb 1994.20pp.Submitted to Nucl.Instrum.Methods A. (1994)
Takashi Matsushita 等人:“非硬性 1.2 微米 CMOS 的辐射敏感度”。
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S.Okuno et.al.: "NEW INSULATOR FILM OF INTEGRATED CAPACITOR FOR A SILICON STRIP DETECTOR." KEK-PREPRINT-93-169,Dec 1993.4pp.IEEE 1993 Nuclear Science Symposium and Medical Imaging Conference,San Francisco,CA,31 Oct-6 Nov 1993.(1994)
S.Okuno 等人:“用于硅条检测器的新型集成电容器绝缘膜。”
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J.L.Guyonnet et al.: "OPERATION OF A FASTRICH PROTOTYPE WITH VLSI READOUT ELECTRONICS." Nucl.Instrum.Methods. A343. 178-191 (1994)
J.L.Guyonnet 等人:“使用 VLSI 读出电子设备操作 FASTRICH 原型。”
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共 44 条
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财政年份:1996
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Construction of the Advanced Detectors for KEK B-factory.
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负责人:MATSUDA Takeshi
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依托单位:
海外基金