Construction of the Advanced Detectors for KEK B-factory.

为 KEK B 工厂建造先进探测器。

基本信息

项目摘要

National Laboratory for High Energy Physics, KEK,is building an asymmetric B-factory. The BELLE detector to study CP violation in B meson decays is under construction. It is expected that the BELLE experiment will provide a definitive test of CP violation in the B-meson system by measuring the three angles and the three sides of the CKM triangles. To realize this goal, a good measurement of B decay vertices and an excellent p/K identification up to 4 GeV/c are necessary. In this project, we studied the optimized design of a Silicon micro-Vertex Detector (SVD) at the B-factory and now build one made of Double-sided Silicon Strip Detectors (DSSD) with a Double-Metal Layr (DML) for the z-strip readout. We designed and tested successfully a large DSSD with DML of wide n-strip pitches, a new 128ch low-noise preamplifier chip (SMAASH chip) with 8 cell analog memory, a new bump-bonding assembly method of detector unit and DAQ-trigger modules. To make the SMAASH chip rediation-hard we test the Rapid Thermal Nitridation (RTN) process, a finer (0.6-0.8 micron) process with a low temperature oxidation. We also plan to try one of established radiation-hard processes DMILL process). As for the p/K separation at the BELLE experiment, we previously performed an intensive R&D study of the fast Ring Image Cherenkov (RICH) counter with a CsI hotocathode. It turned out unfortunately that the quantum efficiency of large CsI photocathodes was not high enough. In this project we made a R&D study of a hybrid phototube and, as a radiator of the Cherenkov light, we developed a new low-index, highly-transparent Silica Aerogel tile. This new aerogel is also higly hydrophobic and easy to handle. We currently prepare a test of a prototype RICH counter consists of the HPT ant the silica aerogel.
国家高能物理实验室(KEK)正在建造一个不对称的B工厂。研究B介子衰变CP破坏的贝儿探测器正在建设中。预计贝儿实验将通过测量CKM三角形的三个角和三条边来提供B介子系统CP破坏的确定性测试。为了实现这一目标,一个很好的测量B衰变顶点和一个优秀的p/K识别高达4 GeV/c是必要的。在这个项目中,我们研究了B工厂的硅微顶点探测器(SVD)的优化设计,现在构建了一个由双面硅条探测器(DSSD)和双金属层(DML)制成的z带读出。我们成功地设计和测试了一个具有宽n条间距DML的大容量固态硬盘、一个具有8单元模拟存储器的128通道低噪声存储器芯片(SMAASH芯片)、一种新的探测器单元和DAQ触发模块的凸点键合组装方法。为了使SMAASH芯片抗辐射,我们测试了快速热氮化(RTN)工艺,这是一种具有低温氧化的更精细(0.6-0.8微米)工艺。我们还计划尝试一种已建立的抗辐射工艺(DMILL工艺)。至于在贝儿实验的p/K分离,我们以前进行了密集的R&D研究的快速环图像切伦科夫(RICH)计数器与CsI的光阴极。不幸的是,大CsI光电阴极的量子效率不够高。在这个项目中,我们进行了混合光电管的研发研究,并作为切伦科夫光的辐射器,我们开发了一种新的低折射率,高透明的二氧化硅气凝胶瓦。这种新的气凝胶也是高度疏水的,易于处理。我们目前正在准备一个由HPT和二氧化硅气凝胶组成的原型RICH计数器的测试。

项目成果

期刊论文数量(35)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Hirokazu Ikeda,et al.: "FRONTEND INTERFACE OF THE SVD READOUT SYSTEM FOR BELLE." IEEE Trans.Nucl.Sci.
Hirokazu Ikeda 等人:“BELLE SVD 读出系统的前端界面”。
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T.Kawasaki et.al.: "MEASUREMENT OF THE SPATIAL RESOLUTION OF WIDE PITCH SILICON STRIP DETECTORS WITH LARGE IN CIDENT ANGLE." IEEE Trans.Nucl.Sci.
T.Kawasaki 等人:“大入射角宽间距硅条探测器空间分辨率的测量”。
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By Hirokazu Ikeda et.al.: "RADIATION TOLERANCE FOR THE SMA2SH SERIES FRONTEND CHIPS FOR A SILICON MICROSTRIP DETECTOR." Nucl.Instrum.Meth.A 380:618-622,1996.A380. 618-622 (1996)
作者:Hirokazu Ikeda 等人:“硅微带检测器的 SMA2SH 系列前端芯片的辐射耐受性。”
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Y.Saitoh et.al.: "FABRICATION OF A DOUBLE SIDED SILICON MICROSTRIP DETECTOR WITH AN ONO CAPACITOR DIELECTRIC FILM." IEEE Trans.Nucl.Sci. (KEK-PREPRINT-95-147,Nov 1995.). (Submitted).
Y.Saitoh 等人:“带有小野电容介电膜的双面硅微带检测器的制造。”
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BELLE Collaboration: "BELLE PROGRESS REPORT : APRIL 1995-MARCH 1996." KEK-PROGRESS-REPORT-96-1-H,.
BELLE 合作:“BELLE 进展报告:1995 年 4 月至 1996 年 3 月。”
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MATSUDA Takeshi其他文献

MATSUDA Takeshi的其他文献

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{{ truncateString('MATSUDA Takeshi', 18)}}的其他基金

Development and Evaluation of Student-Centered Enrollment System: Data-Assisted Advising Functions
以学生为中心的招生系统的开发和评估:数据辅助咨询功能
  • 批准号:
    16H03082
  • 财政年份:
    2016
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Research on the International Criminal Law
国际刑法研究
  • 批准号:
    23530074
  • 财政年份:
    2011
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Analysis of real singularities and its application to mathematical information
实奇点分析及其在数学信息中的应用
  • 批准号:
    23740094
  • 财政年份:
    2011
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Comparative study on bargaining in the criminal procedure
刑事诉讼中讨价还价的比较研究
  • 批准号:
    19530055
  • 财政年份:
    2007
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Synthesis of transition metal oxides with nanopores and their catalytic properties for alkane isomerization
纳米孔过渡金属氧化物的合成及其烷烃异构化催化性能
  • 批准号:
    14550758
  • 财政年份:
    2002
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
The Construction of Global History and its Historiography
全球史的建构及其史学
  • 批准号:
    09309007
  • 财政年份:
    1997
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A Study of Silicon (PIN) Pixel detectors
硅 (PIN) 像素探测器的研究
  • 批准号:
    08554006
  • 财政年份:
    1996
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research & development on advanced detectors for B-factories.
研究
  • 批准号:
    05044063
  • 财政年份:
    1993
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for international Scientific Research

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Study of pixel vertex detector with SOI technology towards the first realization
SOI技术像素顶点检测器的研究迈向首次实现
  • 批准号:
    24740137
  • 财政年份:
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MRI: Development of a Silicon Vertex Detector for the Higgs Search at the Tevatron Collider
MRI:开发用于 Tevatron 对撞机希格斯粒子搜索的硅顶点探测器
  • 批准号:
    0116649
  • 财政年份:
    2001
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    $ 3.97万
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    Continuing Grant
Development of thin CCD vertex detector
薄型CCD顶点探测器的研制
  • 批准号:
    11640295
  • 财政年份:
    1999
  • 资助金额:
    $ 3.97万
  • 项目类别:
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Research for Radiation Damage of CCD Vertex Detector
CCD顶点探测器辐射损伤研究
  • 批准号:
    11640247
  • 财政年份:
    1999
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Zeus experiment: silicon vertex detector
宙斯实验:硅顶点探测器
  • 批准号:
    206707-1998
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    1998
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    $ 3.97万
  • 项目类别:
    Subatomic Physics Envelope - Research Tools and Instruments
Presidential Young Investigator Award: High Energy Physics Vertex Detector Development Laboratory (Physics)
总统青年研究员奖:高能物理顶点探测器开发实验室(物理)
  • 批准号:
    8451274
  • 财政年份:
    1985
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