Construction of the Advanced Detectors for KEK B-factory.

为 KEK B 工厂建造先进探测器。

基本信息

项目摘要

National Laboratory for High Energy Physics, KEK,is building an asymmetric B-factory. The BELLE detector to study CP violation in B meson decays is under construction. It is expected that the BELLE experiment will provide a definitive test of CP violation in the B-meson system by measuring the three angles and the three sides of the CKM triangles. To realize this goal, a good measurement of B decay vertices and an excellent p/K identification up to 4 GeV/c are necessary. In this project, we studied the optimized design of a Silicon micro-Vertex Detector (SVD) at the B-factory and now build one made of Double-sided Silicon Strip Detectors (DSSD) with a Double-Metal Layr (DML) for the z-strip readout. We designed and tested successfully a large DSSD with DML of wide n-strip pitches, a new 128ch low-noise preamplifier chip (SMAASH chip) with 8 cell analog memory, a new bump-bonding assembly method of detector unit and DAQ-trigger modules. To make the SMAASH chip rediation-hard we test the Rapid Thermal Nitridation (RTN) process, a finer (0.6-0.8 micron) process with a low temperature oxidation. We also plan to try one of established radiation-hard processes DMILL process). As for the p/K separation at the BELLE experiment, we previously performed an intensive R&D study of the fast Ring Image Cherenkov (RICH) counter with a CsI hotocathode. It turned out unfortunately that the quantum efficiency of large CsI photocathodes was not high enough. In this project we made a R&D study of a hybrid phototube and, as a radiator of the Cherenkov light, we developed a new low-index, highly-transparent Silica Aerogel tile. This new aerogel is also higly hydrophobic and easy to handle. We currently prepare a test of a prototype RICH counter consists of the HPT ant the silica aerogel.
国家高能物理实验室KEK正在建立一个不对称的B基本。在B Meson衰减中研究CP违规的Belle探测器正在建设中。预计BELLE实验将通过测量CKM三角形的三个角度和三个侧面来对B-Meson系统中的CP违规进行确定的测试。为了实现这一目标,必须对B衰减顶点进行良好的测量和最多4 GEV/C的出色P/K识别。在这个项目中,我们研究了B-FARTORY在B-FARTORY的硅微vertex探测器(SVD)的优化设计,现在构建了一个由双面硅条探测器(DSSD)制成的,该硅条探测器(DSSD)用双倍的Layr(DML)进行Z-Strip读数。我们设计并成功测试了一个大型DSSD,它具有宽的N-Strip螺距DML,这是一种新的128ch低噪声前置放大器芯片(SMAASH芯片),该芯片(SMAASH芯片)带有8个模拟模拟存储器,一种新的检测器单元的颠簸组装方法和DAQ-Trigger模块。为了使SMAASH芯片重新修复,我们测试了快速的热硝化(RTN)过程,这是一种较低温度氧化的细胞(0.6-0.8微米)过程。我们还计划尝试一种既定的辐射过程DMILL工艺)。至于Belle实验中的P/K分离,我们以前对CSI热电话进行了对快速环图像Cherenkov(Rich)计数器进行深入的研发研究。不幸的是,大型CSI光疗的量子效率不够高。在这个项目中,我们对混合光电管进行了研发研究,作为Cherenkov Light的散热器,我们开发了一种新的低索引,高度透明的硅胶瓷砖。这个新的气凝胶也是疏水性的,易于处理。目前,我们准备了富含原型柜台的测试,由二氧化硅气凝胶组成。

项目成果

期刊论文数量(35)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Kawasaki et.al.: "MEASUREMENT OF THE SPATIAL RESOLUTION OF WIDE PITCH SILICON STRIP DETECTORS WITH LARGE IN CIDENT ANGLE." IEEE Trans.Nucl.Sci.
T.Kawasaki 等人:“大入射角宽间距硅条探测器空间分辨率的测量”。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Saitoh et.al.: "FABRICATION OF A DOUBLE SIDED SILICON MICROSTRIP DETECTOR WITH AN ONO CAPACITOR DIELECTRIC FILM." IEEE Trans.Nucl.Sci. (KEK-PREPRINT-95-147,Nov 1995.). (Submitted).
Y.Saitoh 等人:“带有小野电容介电膜的双面硅微带检测器的制造。”
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
By Hirokazu Ikeda et.al.: "RADIATION TOLERANCE FOR THE SMA2SH SERIES FRONTEND CHIPS FOR A SILICON MICROSTRIP DETECTOR." Nucl.Instrum.Meth.A 380:618-622,1996.A380. 618-622 (1996)
作者:Hirokazu Ikeda 等人:“硅微带检测器的 SMA2SH 系列前端芯片的辐射耐受性。”
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Saitoh et.al.: "PERFORMANCE OF A DOUBLE SIDED SILICON MICROSTRIP DETECTOR WITH A WIDE PTICHN SIDE READOUTUSING A FIELD PLATE AND A MULTIP-STOP STRUCTURE." IEEE Trans.Nucl.Sci.
Y.Saitoh 等人:“使用场板和多点结构进行宽间距侧读出的双面硅微带检测器的性能。”
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

MATSUDA Takeshi其他文献

MATSUDA Takeshi的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('MATSUDA Takeshi', 18)}}的其他基金

Development and Evaluation of Student-Centered Enrollment System: Data-Assisted Advising Functions
以学生为中心的招生系统的开发和评估:数据辅助咨询功能
  • 批准号:
    16H03082
  • 财政年份:
    2016
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Research on the International Criminal Law
国际刑法研究
  • 批准号:
    23530074
  • 财政年份:
    2011
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Analysis of real singularities and its application to mathematical information
实奇点分析及其在数学信息中的应用
  • 批准号:
    23740094
  • 财政年份:
    2011
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Comparative study on bargaining in the criminal procedure
刑事诉讼中讨价还价的比较研究
  • 批准号:
    19530055
  • 财政年份:
    2007
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Synthesis of transition metal oxides with nanopores and their catalytic properties for alkane isomerization
纳米孔过渡金属氧化物的合成及其烷烃异构化催化性能
  • 批准号:
    14550758
  • 财政年份:
    2002
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
The Construction of Global History and its Historiography
全球史的建构及其史学
  • 批准号:
    09309007
  • 财政年份:
    1997
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A Study of Silicon (PIN) Pixel detectors
硅 (PIN) 像素探测器的研究
  • 批准号:
    08554006
  • 财政年份:
    1996
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research & development on advanced detectors for B-factories.
研究
  • 批准号:
    05044063
  • 财政年份:
    1993
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for international Scientific Research

相似海外基金

Study of pixel vertex detector with SOI technology towards the first realization
SOI技术像素顶点检测器的研究迈向首次实现
  • 批准号:
    24740137
  • 财政年份:
    2012
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Research for the development of the vertex detector using fully-depleted fine-pixel CCD
全耗尽型精细像素CCD顶点探测器的研制研究
  • 批准号:
    17540282
  • 财政年份:
    2005
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
MRI: Development of a Silicon Vertex Detector for the Higgs Search at the Tevatron Collider
MRI:开发用于 Tevatron 对撞机希格斯粒子搜索的硅顶点探测器
  • 批准号:
    0116649
  • 财政年份:
    2001
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Continuing Grant
Study of B-meson decays at the KEKB-Factory
KEKB 工厂 B 介子衰变研究
  • 批准号:
    13440083
  • 财政年份:
    2001
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
R&D on Experimental Search Methods on Strange B-Meson Decoys
奇异B介子诱饵实验搜索方法研发
  • 批准号:
    12640268
  • 财政年份:
    2000
  • 资助金额:
    $ 3.97万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了