The clarification of the emission mechanism due to the energy transfer for the dye-doped electroluminescent devices

阐明染料掺杂电致发光器件的能量转移引起的发射机制

• 批准号: 13650352
• 负责人: NAGATOMO Takao
• 金额: $ 1.92万
• 依托单位: Shibaura Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650352/
• 关键词: organic electroluminescence device; dye-doped device; emission mechanism; emission due to energy transfer; assist; phosphorescence material; indium complex; dopant

In this study, the luminescence properties of electroluminescence devices which were doped dopant over two such as the organic dyes and the luminescence materials in the emitting layer and the hole transport layer were examined1. The improvement of the emitting layer. ITO/PVCz:DCM1+Be(PIP)_2/Alq_3/Al devices were made by using PVCz doped of DCM1 an Be(PIP)_2 as the emitting layer. Be(PIP)_2 is not directly radiated. But, Be(PIP)_2 assists the electroluminescence from another dopant2. The case in which irridium complex which is the phosphorescence material was doped in the luminous layer. ITO/PVCz:Ir(ppy)_3/Alq_3/Al devices were made by using PVCz doped irridium complex Ir(ppy)_3 which is the phosphorescence material was doped in the luminous layer. When iridium complex was doped, the luminous efficiency increases, and the luminous efficiency 1.8 Im/W at the drive voltage of 9.2V 1.8. The relationship between host material and guest material, and the contribution of the second dopant for the electroluminescence devices are not clarified sufficientlyITO/α-NPD/CPB:Ir(ppy)_3/BCP/Alq_3/MgAg devices were made by using CPB doped irri-dium complex of 17 wt.% as the emitting layer, α-NPD as the hole transport layer, BCP as the hole brooking layer, and Alq_3 as the electron transport layer. When the thickness of α-NPD is 40nm, the luminous efficiency was 36 Im/W at the applied voltage of 10V. It is necessary to study the energy confinement for the electroluminescence devicesIt is necessary to study the energy transfer process between triplet and singlet to clarify the emission mechanism

在本研究中，对在发光层和空穴传输层中掺杂两种以上的掺杂剂如有机染料和发光材料的电致发光器件的发光性能进行了研究1。发光层的改进。以DCM 1和Be（PIP）2掺杂的PVCz为发光层，制备了ITO/PVCz：DCM 1 +Be（PIP）2/Alq 3/Al器件。Be（PIP）_2不直接辐射。但是，Be（PIP）_2对另一种掺杂剂的电致发光起辅助作用。在发光层中掺杂作为磷光材料的铱络合物的情况。采用PVCz掺杂铱配合物Ir（ppy）_3作为发光材料，掺杂在发光层中，制成ITO/PVCz：Ir（ppy）_3/Alq_3/Al器件。当铱配合物掺杂时，发光效率增加，在9.2V 1.8的驱动电压下，发光效率为1.8Im/W。用CPB掺杂17wt%的铱配合物制备了ITO/α-NPD/CPB：Ir（ppy）_3/BCP/Alq_3/MgAg电致发光器件作为发光层，α-NPD作为空穴传输层，BCP作为空穴阻挡层，Alq_3作为电子传输层。当α-NPD的厚度为40 nm时，在10 V电压下的发光效率为36 Im/W。为了研究电致发光器件的能量限制问题，有必要研究三重态和单重态之间的能量转移过程，以阐明发光机理

项目成果

Tetsuya,Tanaka, Susumu,Nagashima, Masaki,Yamaguchi, Takao,Nagatomo: "Organic Light-Emitting Devices with Indium-Complex"The Meeting on Organic Molecular Electronics (The Institute of Electronics,Information and Communication Engineers). Vol.OME2002-10. 13

Tetsuya、Tanaka、Susumu、Nagashima、Masaki、Yamaguchi、Takao、Nagatomo：“具有铟络合物的有机发光器件”有机分子电子学会议（电子、信息和通信工程师学会）。

田中 哲也, 長島 奨, 山口 正樹, 長友 隆男: "イリジウム錯体を用いた有機EL素子"電子情報通信学会・有機エレクトロニクス研究会・資料(信学技報). Vol.OME2002-10. 13-18 (2002)

Tetsuya Tanaka、Sho Nagashima、Masaki Yamaguchi、Takao Nagatomo：“使用铱配合物的有机 EL 器件”IEICE/有机电子研究组/材料（IEICE 技术报告第 13-18 卷）。

長友 隆男: "有機EL"「新しい高効率光源材料・デバイス」電気学会技術報告. 第847号. 8-11 (2001)

Takao Nagatomo：“有机EL”“新型高效光源材料和器件”IEEJ技术报告第847. 8-11（2001）。

Tetsuya,TANAKA, Susumu,NAGASHIMA, Takao,NAGATOMO: "Organic Light-Emitting Devices with Fluorescent and Phosphorescent Dopants"Abstracts of Second International Conference on Molecular Electronics and Bioelectronics (M&BE2). 67 (2003)

Tetsuya，TANAKA，Susumu，NAGASHIMA，Takao，NAGATOMO：“具有荧光和磷光掺杂剂的有机发光器件”第二届国际分子电子学和生物电子学会议摘要（M）

田中 哲也, 長島 奨, 山口 正樹, 長友 隆男: "イリジウム錯体を用いた有機EL素子"電子情報通信学会・有機エレクトロニクス研究会・資料(信学技報). Vol.OME 2002-10. 13-18 (2002)

Tetsuya Tanaka、Sho Nagashima、Masaki Yamaguchi、Takao Nagatomo：“使用铱络合物的有机 EL 器件”IEICE/有机电子研究组/材料（IEICE 技术报告 Vol.OME 13-10（2002 年）。