The clarification of the emission mechanism due to the energy transfer for the dye-doped electroluminescent devices

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In this study, the luminescence properties of electroluminescence devices which were doped dopant over two such as the organic dyes and the luminescence materials in the emitting layer and the hole transport layer were examined1. The improvement of the emitting layer. ITO/PVCz:DCM1+Be(PIP)_2/Alq_3/Al devices were made by using PVCz doped of DCM1 an Be(PIP)_2 as the emitting layer. Be(PIP)_2 is not directly radiated. But, Be(PIP)_2 assists the electroluminescence from another dopant2. The case in which irridium complex which is the phosphorescence material was doped in the luminous layer. ITO/PVCz:Ir(ppy)_3/Alq_3/Al devices were made by using PVCz doped irridium complex Ir(ppy)_3 which is the phosphorescence material was doped in the luminous layer. When iridium complex was doped, the luminous efficiency increases, and the luminous efficiency 1.8 Im/W at the drive voltage of 9.2V 1.8. The relationship between host material and guest material, and the contribution of the second dopant for the electroluminescence devices are not clarified sufficientlyITO/α-NPD/CPB:Ir(ppy)_3/BCP/Alq_3/MgAg devices were made by using CPB doped irri-dium complex of 17 wt.% as the emitting layer, α-NPD as the hole transport layer, BCP as the hole brooking layer, and Alq_3 as the electron transport layer. When the thickness of α-NPD is 40nm, the luminous efficiency was 36 Im/W at the applied voltage of 10V. It is necessary to study the energy confinement for the electroluminescence devicesIt is necessary to study the energy transfer process between triplet and singlet to clarify the emission mechanism