Doping of II-VI Semiconductors

II-VI 半导体的掺杂

• 批准号: 5259442
• 负责人: Professor Dr. Thomas Wichert
• 金额: --
• 依托单位: Naturwissenschaftlich-Technische Fakultät
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2000
• 资助国家: 德国
• 起止时间: 1999-12-31 至 2002-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5259442?language=en
• 关键词: Doping; II; VI; Semiconductors

The majority of II-VI semiconductors can only be doped with high efficiency either p- or n-type. The availability of both types of electrical carriers, however, is of fundamental importance to most electronic devices. Moreover, the doping procedure itself turns out to be more complicated in these materials than in Si; for example doping by ion implantation, a technique being central to Si technology, is very difficult to achieve. In this proposal, the incorporation of electrically active dopants in II-VI semiconductors will be studied: p-type doping of ZnSe and n-type doping of ZnTe; doping by ion implantation; dopant-hydrogen interactions; and influence of residual impurities. For investigating the incorporation of dopant atoms and their interactions with intrinsic and extrinsic defects, the perturbed gg angular correlation technique (PAC) and the photoluminescence spectroscopy (PL) using the following radioactive isotopes will be applied: 77Br, 111In, and 111Ag (PAC) and 67Cu, 67Ga, 71As, 77Br, 111Ag, and 131I (PL). Theoretical calculations of defect induced electric field gradients (efg) will support the interpretation of the efg measured by PAC. The implantation of the radioactive isotopes offers the control of purity, depth distribution, and dose, which is decisive for the interpretation of the obtained experimental information and, finally, offers access to the study of the implantation process itself.

大多数II-VI族半导体只能以高效率掺杂p型或n型。然而，这两种类型的电载体的可用性对于大多数电子设备是至关重要的。此外，掺杂过程本身在这些材料中比在Si中更复杂;例如，通过离子注入进行掺杂，这是Si技术的核心技术，非常难以实现。在这个建议中，将研究在II-VI族半导体中掺入电活性掺杂剂：ZnSe的p型掺杂和ZnTe的n型掺杂;通过离子注入进行掺杂;掺杂剂-氢相互作用;以及残余杂质的影响。为了研究掺杂剂原子的掺入及其与本征和非本征缺陷的相互作用，将应用微扰gg角相关技术（PAC）和光致发光光谱（PL），使用以下放射性同位素：77 Br，111 In和111 Ag（PAC）和67 Cu，67 Ga，71 As，77 Br，111 Ag和131 I（PL）。理论计算的缺陷感应电场梯度（efg）将支持解释的efg测量PAC。放射性同位素的注入提供了对纯度、深度分布和剂量的控制，这对于解释所获得的实验信息是决定性的，并且最终提供了对注入过程本身的研究。