Doping of II-VI Semiconductors

大多数II-VI半导体只能高效掺杂p型或n型半导体。然而，这两种类型的电载流子的可用性对大多数电子设备来说是至关重要的。此外，事实证明，在这些材料中，掺杂过程本身比在硅中更复杂；例如，通过离子注入进行掺杂，这是硅技术的核心技术，很难实现。在这个方案中，将研究在II-VI半导体中掺入电活性掺杂：P型掺杂和n型掺杂；离子注入掺杂；掺杂剂-氢相互作用；以及残留杂质的影响。为了研究掺杂原子的掺入及其与本征和非本征缺陷的相互作用，将使用以下放射性同位素的微扰GG角相关技术(PAC)和光致发光光谱(PL)：77Br、111In和111Ag(PAC)和67Cu、67Ga、71As、77Br、111Ag和131I(PL)。缺陷感生电场梯度(EFG)的理论计算将支持对PAC测量的EFG的解释。放射性同位素的注入提供了对纯度、深度分布和剂量的控制，这对于解释所获得的实验信息是决定性的，并最终提供了研究注入过程本身的途径。

The majority of II-VI semiconductors can only be doped with high efficiency either p- or n-type. The availability of both types of electrical carriers, however, is of fundamental importance to most electronic devices. Moreover, the doping procedure itself turns out to be more complicated in these materials than in Si; for example doping by ion implantation, a technique being central to Si technology, is very difficult to achieve. In this proposal, the incorporation of electrically active dopants in II-VI semiconductors will be studied: p-type doping of ZnSe and n-type doping of ZnTe; doping by ion implantation; dopant-hydrogen interactions; and influence of residual impurities. For investigating the incorporation of dopant atoms and their interactions with intrinsic and extrinsic defects, the perturbed gg angular correlation technique (PAC) and the photoluminescence spectroscopy (PL) using the following radioactive isotopes will be applied: 77Br, 111In, and 111Ag (PAC) and 67Cu, 67Ga, 71As, 77Br, 111Ag, and 131I (PL). Theoretical calculations of defect induced electric field gradients (efg) will support the interpretation of the efg measured by PAC. The implantation of the radioactive isotopes offers the control of purity, depth distribution, and dose, which is decisive for the interpretation of the obtained experimental information and, finally, offers access to the study of the implantation process itself.