CHEMICAL ENGINEERING ANALYSIS AND CONTROL OF GROWTH PROCESS OF BULK SINGLE CRYSTALS FOR OPTO-ELECTRONICS DEVICES

光电器件用大块单晶生长过程的化学工程分析与控制

• 批准号: 07305060
• 负责人: IMAISHI Nobuyuki
• 金额: $ 1.66万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07305060/
• 关键词: Single Crystal Growth; Numerical Analysis; Transport Phenomena; Melt Convection; Flow Control; Thermal Stress; Thermo-Physical Properties of Melts; Marangoni Convection; 移動現象論; バルク単結晶; 移動現象; 結晶育成工学; 気相内対流; シミュレーション; 光・電子材料用バルク単結晶

This project aimed to establish scientific fundamentals of bulk single crystal growth for opto-electronics devices. Czochralski process for semiconductor and oxide crystals have been analyzed experimentally and numerically.Gas phase transport phenomena was numerically investigated and a device was proposed to increase mass transfer rate of SiO.Fluid flow and heat transfer in melt pool was numerically analyzed and the application of magnetic field was revealed effective to control the oscillatory melt flows. Effect of buoyancy and thermocapillary forces on melt flow of compound semiconductors was analyzed experimentally and numerically. Thermal stress analysis and dislocation kinetic model was combined to predict dislocation density in semiconductor single crystals.Global analysis code was developed for a RF heated Czochralski furnace for oxide crystal growth. The code has been effectively used to optimize the structure and operation of the furnace. The temperature distributions thus obtained was used to thermal-stress and crack formation analyzes. Thermo-physical properties of some oxide melts have been measured.

该项目旨在建立光电子器件大块单晶生长的科学基础。对半导体和氧化物晶体的直拉法生长过程进行了实验和数值分析。对气相输运现象进行了数值研究，提出了一种提高SiO传质速率的装置。对熔池中的流体流动和传热进行了数值分析，揭示了施加磁场对控制振荡熔体流动的有效性。通过实验和数值模拟研究了浮力和热毛细力对化合物半导体熔体流动的影响。将热应力分析与位错动力学模型相结合，对半导体单晶中的位错密度进行了预测，开发了用于射频加热直拉法生长氧化物晶体的全局分析程序。该程序已有效地用于炉体结构和操作的优化。由此获得的温度分布用于热应力和裂纹形成分析。测量了几种氧化物熔体的热物理性质。

项目成果

今石 宣之: "新編 伝熱工学の進展" 養賢堂, 227-338 (1995)

Nobuyuki Imaishi：“新版：传热工程的进展” Yokendo，227-338 (1995)

H. Ozoe: "The study on the natural convection of liquid metal in various directions of external magnetic field with an application on the Czochralski crystal growth" Proc. 1st Int. Joint Symp. 43-48 (1995)

H. Ozoe：“液态金属在外部磁场各个方向上的自然对流研究及其在直拉晶体生长中的应用”Proc。

T. Tsukada: "Effect of internal radiation within crystal and melt on Cz crystal growth of oxide" Int. J. Heat Mass Transfer. 38. 2707-2714

T. Tsukada：“晶体和熔体内的内部辐射对氧化物 Cz 晶体生长的影响”Int。

A.Ikari: "Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon" J.Materials Science and Engineering. Vol.B36. 42-45 (1996)

A.Ikari：“氢和氧对硅熔体特性和晶体生长的影响”J.材料科学与工程。

Keigo Hoshikawa: "Control of oxygen concentration in Czochralski silicon crystal growyh by a cusp magnetic field" Pro.2nd Int.Symp.Advanced Sci.Techn.Silicon Materials(Kona,Hamaii,USA). 85-94 (1996)

Keigo Hoshikawa：“通过尖点磁场控制直拉硅晶体生长中的氧浓度”Pro.2nd Int.Symp.Advanced Sci.Techn.Silicon Materials（Kona，Hamaii，美国）。