Development of Simulation Codes of Plasma CVD Reactors for Composite Oxide Film Growth

复合氧化膜生长等离子体CVD反应器模拟代码的开发

• 批准号: 11555208
• 负责人: IMAISHI Nobuyuki
• 金额: $ 8.83万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555208/
• 关键词: Plasma CVD; LiNbO3; 複酸化物膜; アフターグロー型CVD; 酸化物膜; シミュレーション

1) Both for thermal and plasma CV processes, the surface rate process is the most important. In this research project, we have developed a series of Monte Calro simulation codes. These codes can predict the film shapes grown on micro-scale roughness if the surface reaction rate constant (reactive sticking coefficient), kinetic energy and incident angles of the are given. These codes are also applicable to analyze surface reaction rate constant (reactive sticking coefficient) through profile fitting of the experimentally obtained film shapes grown on micro scale trenches. The surface reaction may be either linear or non-linear function of gas phase concentration of the intermediate species.2) Experimental results on CVD of multi component oxide films.2-1) As a typical complex oxide, thin film of LiNbO3 was experimentally prepared by a thermal CVD in order to estimate the operation conditions (reaction temperature, inlet concentration ratio of Nb and Li precursors) to realize pure LiNbOS films over the whole surface area of substrate. As a result, we found a narrow window of concentration ratio and temperature range to prepare pure LiNbO3.2-2) Thin film of SiO2 was experimentally grown by means of an after-glow plasma CVD using TRIES and TEOS as source material. The experimental results indicated influences of the source materials on the step coverage of grown films over micro scale trenches.

1)对于热CV工艺和等离子CV工艺，表面速率工艺是最重要的。在本研究计画中，我们开发了一系列的蒙地卡罗模拟程式。在给定表面反应速率常数（反应粘附系数）、动能和入射角的条件下，这些程序可以预测微尺度粗糙度上生长的薄膜形状。这些代码也适用于分析表面反应速率常数（反应粘附系数），通过轮廓拟合的实验获得的薄膜形状生长在微尺度沟槽。2）多组分氧化物薄膜化学气相沉积的实验结果2 -1）作为一种典型的复合氧化物，LiNbO_3薄膜是用热化学气相沉积法制备的，以确定其操作条件（反应温度、Nb和Li前体的入口浓度比）以在衬底的整个表面积上实现纯LiNbOS膜。2）以正硅酸乙酯和TRIES为原料，采用余辉等离子体化学气相沉积法，制备了SiO_2薄膜。实验结果表明，源材料对生长的薄膜在微尺度沟槽上的台阶覆盖率的影响。