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Ultra-thin film Growth of the oxide ion conducting material on the porous substrate by thermal CVD

热CVD在多孔基底上超薄膜生长氧离子传导材料

基本信息

批准号：
05555215
负责人：
IMAISHI Nobuyuki
金额：
$ 3.46万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

The followings are main accomplishment of this research, problems unsolved and research policies from now on.1.We investigated from the view point of chemical reaction engineering how to model CVD film growth processes for ZrO_2, Y_2O_3 and YSZ (ZrO_2 stabilized by Y_2O_3) during a low pressure metal organic CVD (LPMOCVD) using DPM complex as source material, and determined the reaction rate constants as a function of the temperature by means of a semi-micro and a macro simulation.2.We developed a three dimensional simple Monte Carlo simulation code to reproduce the film shape grown on and in a contact hole of arbitrary form. This code provides a quantitative discussion about the film growth on porous substrates.3.Applying this code to different LPCVD systems (LiO_2, Nb_2O_3 and ZnO) , we also determined the value of each reactive sticking coefficient and activation energy from the simulated step coverage on a contact hole. The values of these sticking coefficients for the metal oxide are large at high temperature, and decrease dramatically with decreasing temperature.4.Based on the above findings, we proposed a novel method to occlude a hole on a porous substrate with thin film by a modified thermal CVD.・During the first stage, film growth is processed at higher temperature to reduce the hole opening by making large transversal bulges of grown film near the opening with less deposition depth in the hole. During the next stage, the operating temperature is reduced to occlude the opening quickly.This method was confirmed to be effective by the deposition experiments.5.At the present, we undertake the optimization of this process.We intend to perfrom the choke tests to the sample fabricated by the above method using a permeability measurement apparatus, and in addition, measure the actual oxide ion conductance of the fabricated YSZ film.

1.从化学反应工程的角度，研究了如何模拟以DPM络合物为原料的低压金属有机CVD(LPMOCVD)过程中，生长出的ZrO_2、Y_2O_3和YSZ(由Y_2O_3稳定的ZrO_2)的生长过程，并通过半微观和宏观模拟确定了反应速率常数随温度的变化关系。2.我们开发了一个简单的三维蒙特卡罗模拟程序来再现在任意形状的接触孔上生长的薄膜的形状。3.将该程序应用于不同的LPCVD系统(LiO_2、Nb_2O_3和ZnO)，通过模拟接触孔上的台阶覆盖，确定了各反应粘着系数和活化能的值。在上述研究结果的基础上，我们提出了一种改进的热化学气相沉积方法来封闭多孔衬底上的孔洞。在第一阶段，薄膜生长在较高的温度下进行，通过使生长的薄膜在孔内沉积深度较小的开口附近产生较大的横向凸起来减少孔的开口。在下一阶段，降低工作温度以快速封闭开口。沉积实验证实了该方法的有效性。5.目前，我们对该工艺进行了优化，我们打算用磁导率测试仪对采用上述方法制备的样品进行扼流测试，并测量所制备的YSZ薄膜的实际氧离子电导。