Ultra-thin film Growth of the oxide ion conducting material on the porous substrate by thermal CVD

以下内容是本研究、未解决的问题和研究政策的主要补充.我们从化学反应工程的角度调查了如何为ZRO_2、Y_2O_3和YSZ模型CVD薄膜增长过程进行的研究（ZrO_2由Y_2O_3稳定）使用DPM复合体作为源材料使用低压力金属有机CVD （LPMOCVD）时，并确定反应速率常数是一个半微和宏观模拟的温度的函数.我们开发了三个维度简单的蒙特卡罗模拟代码来复制电影形状生长在和在一个接触孔的仲裁形式中。此代码提供了关于色情基础上电影增长的定量讨论。3.将此代码应用于不同的LPCVD系统（LiO_2、Nb_2O_3和ZnO） ，我们还确定了每个反应性粘滞的协同作用和激活能量的价值，从模拟步骤覆盖处。这些粘性协同作用对金属氧化物在高温下较大，并在戏剧性上降低温度。4.基于上面的发现，我们提出了一种新颖的方法，用一个经过修改的热CVD将一个孔封闭在一个多孔基底上的薄薄膜上。在第一阶段，电影的增长在较高的温度下被处理，以减少洞的打开，使大的过渡性膨胀的胶片靠近打开，而在洞的深度较低。在下一个阶段，操作温度迅速减少，以便打开时，这一方法被沉积实验证实是有效的。5.在目前，我们低估了这一过程的优化。我们打算从上面的方法制造一个测试样本，使用一种性能测量装置，并在补充中，测量了制造YSZ薄膜的实际氧化物离子作用。

The followings are main accomplishment of this research, problems unsolved and research policies from now on.1.We investigated from the view point of chemical reaction engineering how to model CVD film growth processes for ZrO_2, Y_2O_3 and YSZ (ZrO_2 stabilized by Y_2O_3) during a low pressure metal organic CVD (LPMOCVD) using DPM complex as source material, and determined the reaction rate constants as a function of the temperature by means of a semi-micro and a macro simulation.2.We developed a three dimensional simple Monte Carlo simulation code to reproduce the film shape grown on and in a contact hole of arbitrary form. This code provides a quantitative discussion about the film growth on porous substrates.3.Applying this code to different LPCVD systems (LiO_2, Nb_2O_3 and ZnO) , we also determined the value of each reactive sticking coefficient and activation energy from the simulated step coverage on a contact hole. The values of these sticking coefficients for the metal oxide are large at high temperature, and decrease dramatically with decreasing temperature.4.Based on the above findings, we proposed a novel method to occlude a hole on a porous substrate with thin film by a modified thermal CVD.・During the first stage, film growth is processed at higher temperature to reduce the hole opening by making large transversal bulges of grown film near the opening with less deposition depth in the hole. During the next stage, the operating temperature is reduced to occlude the opening quickly.This method was confirmed to be effective by the deposition experiments.5.At the present, we undertake the optimization of this process.We intend to perfrom the choke tests to the sample fabricated by the above method using a permeability measurement apparatus, and in addition, measure the actual oxide ion conductance of the fabricated YSZ film.