Preparation of functionally graded optical filter

功能梯度滤光片的制备

基本信息

  • 批准号:
    07405029
  • 负责人:
  • 金额:
    $ 9.22万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

Dielectric multilayres are used for bandpass filters in optical communication and for antireflection coatings in solar cells. In these cases.optical losses should be lowered by smoothing interfaces and reducing defects in films. In a helicon sputtering method, high density plasma can be maintained under a low gas pressure. Sputtering ions keep their kinetic energy due to a long mean-free-pass, which enables one to elongate a target-substrate distance. Therefore less plasma-damaged films having a smooth surface can be obtained.In the present work, silica/titania multilayres or Rugert filter were prepared by helicon sputtering. The structure and optical properties of films were measured. Effect of helicon wave power was studied with a plasma-emission spectrometer.The plasma emission intensity increased with increasing radio frequency (RF) power, but plasma density was almost saturated at more than 100W.Thus the RF power was fixed at 100W.Refractive index of titania film decreased from 2.42 to 2.35 with decreasing total gas pressure, but that of silica film was constant (1.48). Both silica and titania films were amorphous. A silica-titania multilayr whose reflection peak is 800nm was designed. It was confirmed that the multilayr had almost the same transmittance spectrum as that of calculation. A transmission electron micrograph showed that the multilayred films had smooth interface.
介质多层用于光通信中的带通滤波器和太阳能电池中的减反射涂层。在这些情况下。应通过平滑界面和减少薄膜中的缺陷来降低光损耗。在螺旋溅射方法中,高密度等离子体可以在低气压下保持。溅射离子保持他们的动能由于一个很长的平均自由通过,这使得一个延长目标-衬底距离。因此,可以得到具有光滑表面的等离子体损伤较少的薄膜。本文采用螺旋溅射法制备了二氧化硅/二氧化钛多层或Rugert滤光片。测量了薄膜的结构和光学性能。利用等离子体发射光谱仪研究了螺旋波能的影响。等离子体发射强度随射频功率的增加而增加,但在100W以上等离子体密度基本饱和。因此射频功率固定为100W。随着总气压的降低,二氧化钛薄膜的折射率从2.42下降到2.35,而二氧化硅薄膜的折射率保持不变(1.48)。二氧化硅和二氧化钛薄膜都是无定形的。设计了一种反射峰为800nm的二氧化硅-二氧化钛多层膜。结果表明,该多层膜的透射光谱与计算值基本一致。透射电子显微照片显示多层膜具有光滑的界面。

项目成果

期刊论文数量(9)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A.Watazu: "Preparation of Ba_2NaNb_5O_<15> thin films by electro cyclotron resonance plasma sputter method and their properties" J.Jpn.Soc.powder and powder Met.44. 86-89 (1997)
A.Watazu:“电回旋共振等离子体溅射法制备Ba_2NaNb_5O_<15>薄膜及其性能”J.Jpn.Soc.powder和powder Met.44。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Goto: "High-Temperature oxidation of CVD silicon-based ceramics" Mass and Charge Transport in Ceramics Ed.by K.Koumoto,L.M.Sheppard and H.Matsubara. 71. 245-257 (1996)
T.Goto:“CVD 硅基陶瓷的高温氧化”《陶瓷中的质量和电荷传输》,作者:K.Koumoto、L.M.Sheppard 和 H.Matsubara。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Masuda: "Ferroelectric and Optical properties of Ba_2NaNb_5O_<15> thin films" Journal of Korean Physical Society. 29. S664-S667 (1996)
Y.Masuda:“Ba_2NaNb_5O_<15>薄膜的铁电和光学性质”韩国物理学会杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
渡津 章: "ECRプラズマスパッタ方によるBa_2NaNb_5O_<15>膜の製作と諸性質" 粉体および粉末冶金. 44. 86-89 (1997)
Akira Watatsu:“ECR等离子体溅射法制备Ba_2NaNb_5O_<15>薄膜及其性能”粉末与粉末冶金学44. 86-89 (1997)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Goto: "High-Temperature oxidation of CVD silicon-based ceramics" Mass and Charge Transport in Ceramics Ed.by K.Koumoto, L.M.Sheppard and H.Matsubara. 71. 245-257 (1997)
T.Goto:“CVD 硅基陶瓷的高温氧化”《陶瓷中的质量和电荷传输》,作者:K.Koumoto、L.M.Sheppard 和 H.Matsubara。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

HIRAI Toshio其他文献

HIRAI Toshio的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('HIRAI Toshio', 18)}}的其他基金

Design and preparation of ferroelectric-metal nano-FGM multi-layer films
铁电金属纳米FGM多层薄膜的设计与制备
  • 批准号:
    11355027
  • 财政年份:
    1999
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
Preparation of Fuctinally Graded Materials in high Energy Field of Plasma
等离子体高能场功能梯度材料的制备
  • 批准号:
    06555191
  • 财政年份:
    1994
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Structural controlling in nano-scale and high-functionalization for multi-component ferroelectric oxide films by chemical vapor deposition
化学气相沉积多组分铁电氧化物薄膜的纳米级和高功能化结构控制
  • 批准号:
    05403017
  • 财政年份:
    1993
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application
线材用高温超导体化学气相沉积研究
  • 批准号:
    02555146
  • 财政年份:
    1990
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
New processes on the structure-controls and property-evaluation of ceramics
陶瓷结构控制和性能评价的新工艺
  • 批准号:
    60303015
  • 财政年份:
    1985
  • 资助金额:
    $ 9.22万
  • 项目类别:
    Grant-in-Aid for Co-operative Research (A)
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了