Substrate surface modification by ion beam irradiation-Deposition of a polycrystalline silicon at a low temperature-

本研究旨在利用离子束辐照改善表面物理性能，以控制薄膜的生长过程。结果如下：1)构建了离子枪基板表面改性装置，将离子枪与高真空室相结合。发现位于离子枪和高真空室之间的质量分离系统具有足够的分辨率。2)为了在非晶基板上低温沉积多晶硅薄膜，采用硅离子束辐照改善玻璃表面物理性能。然后，在室温下，在玻璃表面产生了结晶核。3)在结晶核覆盖的玻璃表面，以低于260°C的温度对硅进行e - b真空蒸发，得到了多晶硅薄膜。通过离子束辐照，实现了多晶硅薄膜在非晶基片上的低温（260℃以下）沉积，并改善了表面物理性能。

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1) The apparatus for substrate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vacuum chamber was found to have enough resolutions.2) To realize low temperature deposition of a polycrystalline silicon thin film on amorphous substrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3) On the glass surface covered with crystallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 260ﾟC by E.B.vacuum evaporation of silicon. In this way, low temperature (below 260ﾟC) deposition of polycrystalline silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.