Substrate surface modification by ion beam irradiation-Deposition of a polycrystalline silicon at a low temperature-

通过离子束照射进行的基板表面改性-多晶硅的低温沉积-

• 批准号: 07555040
• 负责人: YAMAUCHI Kazuto
• 金额: $ 3.01万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555040/
• 关键词: Ion gun; Surface modification; Silicon; Thin film; Low temperature deposition; 液体金属イオン源; 太陽電池; TFT; 表面改質; シリコンイオン

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1) The apparatus for substrate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vacuum chamber was found to have enough resolutions.2) To realize low temperature deposition of a polycrystalline silicon thin film on amorphous substrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3) On the glass surface covered with crystallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 260ﾟC by E.B.vacuum evaporation of silicon. In this way, low temperature (below 260ﾟC) deposition of polycrystalline silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.

本研究旨在借由离子束照射改善薄膜表面物理性质，以控制薄膜成长过程。主要研究结果如下：1）将离子枪与高真空室相结合，构建了离子枪基片表面改性装置。在离子枪和高真空室之间的质量分离系统具有足够的分辨率。2）为了实现在非晶衬底上低温沉积多晶硅薄膜，采用硅离子束辐照改善玻璃表面的物理性能。然后，发现在室温下在玻璃表面上产生结晶核。3）在上述过程之后覆盖有结晶核的玻璃表面上，通过硅的E.B.真空蒸发在低于260 ℃下获得多晶硅薄膜。通过离子束辐照，实现了在非晶衬底上低温（低于260 ℃）沉积多晶硅薄膜，改善了薄膜表面的物理性能。