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Trial Manufacturing of Integrated Type Optical Amplifiers Using Dielectric Crystal Thin Films

使用介质晶体薄膜的集成型光放大器的试制

基本信息

批准号：
07555120
负责人：
MIYAZAKI Yasumitsu
金额：
$ 5.18万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555120/
关键词：
Optical amplifier Optical waveguides Garnet thin films RF sputtering Rare earth doping Spectroscopic measurements X-ray diffraction analysis Dynamic characteristics RFスパッタリング法 Erイオン Prイオン蛍光分光特性光波信号の過度応答特性吸収スペクトル蛍光スペクトル信号

项目摘要

1. Fabrication and optical characteristics analysis of rate earth doped garnet filmsReferring to the fabrication conditions of Nd doped garnet crystal thin films using RF sputtering, we fabricated Er or Pr doped different garnet crystal thin films on YAG or GGG single crystal substrates. The quantitative and x-ray diffraction analyzes reveal good optical and crystalline quality of the fabricated films.2. Spectroscopic measurements of Er ions in garnet crystal thin films.Optimum wavelengths of operation were decided by detailed measurement of absorption and fluorescence spectra. The absorption peaks, which provide high pumping efficiency, were located at 966nm and 1467nm, respectively. The fluorescence spectrum in the 1.55mum region of the film was measured to obtain the best amplification wavelength, and the peak was located at 1530nm.3. Transient response amplification studies using Er doped garnet crystal thin filmsBased on experimentally determined parameters, we analyzed numerically the amplification characteristics. The slow dynamics of the amplifier were explored using long input signal pulses. The proposed amplifier is found to be suitable for amplification of nano and sub-nano second pulses. Further analysis of amplification in the femto-second pulse duration is under progress.4. Fabrication of Er doped garnet crystal thin films using LPEIn order to fabricate better crystal thin films, we set up LPE apparatus, and selected GGG and YIG as substrate material and film host material, respectively. Computer control of the fabrication conditions such as substrate rotation, temperature, etc.was set up. The actual fabrication of active ion doped crystal films is in progress.

1.掺稀土石榴石薄膜的制备及光学特性分析参照射频溅射法制备掺钕石榴石晶体薄膜的条件，在单晶基片上制备了掺Er或Pr不同掺杂的石榴石晶体薄膜。定量和X射线衍射分析表明，所制备的薄膜具有良好的光学和结晶质量。石榴石晶体薄膜中Er离子的光谱测量通过对吸收光谱和荧光光谱的详细测量，确定了最佳的工作波长。高泵浦效率的吸收峰分别位于966 nm和1467 nm。测量了薄膜1.55微米区域的荧光光谱，得到了最佳放大波长，峰值位于1530 nm处。掺Er石榴石晶体薄膜的瞬时响应放大研究在实验确定的参数的基础上，对其放大特性进行了数值分析。利用长输入信号脉冲研究了放大器的慢动态特性。结果表明，该放大器适用于纳、亚纳秒光脉冲的放大。对飞秒脉冲宽度放大的进一步分析正在进行中。利用LPE制备掺Er石榴石晶体薄膜为了制备更好的晶体薄膜，我们搭建了LPE装置，分别选择了GGG和YIG作为衬底材料和薄膜基质材料。建立了基片旋转、温度等工艺条件的计算机控制。活性离子掺杂晶体薄膜的实际制备正在进行中。