Trial Manufacturing of Integrated Type Optical Amplifiers Using Dielectric Crystal Thin Films

1.稀土掺杂石榴石薄膜的制备及光学特性分析参照射频溅射法制备掺钕石榴石薄膜的工艺条件，我们在YAG或GGG单晶衬底上制备了掺铒或掺镨的不同石榴石薄膜。定量分析和x射线衍射分析表明，所制备的薄膜具有良好的光学和结晶质量.石榴石晶体薄膜中Er离子的光谱测量，通过吸收光谱和荧光光谱的详细测量，确定了最佳工作波长。吸收峰分别位于966nm和1467nm处，具有较高的抽运效率。测量了薄膜1.55 μ m区域的荧光光谱，得到最佳放大波长，峰值位于1530 nm.掺铒石榴石晶体薄膜的瞬态响应放大研究在实验确定的参数基础上，对放大特性进行了数值分析。使用长输入信号脉冲探索了放大器的缓慢动态特性。所提出的放大器被发现是适合于放大的纳秒和亚纳秒脉冲。飞秒脉冲宽度放大的进一步分析正在进行中。利用液相外延技术制备掺铒石榴石晶体薄膜为了制备出更好的晶体薄膜，我们建立了液相外延装置，并分别选择GGG和YIG作为衬底材料和薄膜基质材料。计算机控制的制造条件，如基板旋转，温度等。活性离子掺杂晶体薄膜的实际制备正在进行中。

1. Fabrication and optical characteristics analysis of rate earth doped garnet filmsReferring to the fabrication conditions of Nd doped garnet crystal thin films using RF sputtering, we fabricated Er or Pr doped different garnet crystal thin films on YAG or GGG single crystal substrates. The quantitative and x-ray diffraction analyzes reveal good optical and crystalline quality of the fabricated films.2. Spectroscopic measurements of Er ions in garnet crystal thin films.Optimum wavelengths of operation were decided by detailed measurement of absorption and fluorescence spectra. The absorption peaks, which provide high pumping efficiency, were located at 966nm and 1467nm, respectively. The fluorescence spectrum in the 1.55mum region of the film was measured to obtain the best amplification wavelength, and the peak was located at 1530nm.3. Transient response amplification studies using Er doped garnet crystal thin filmsBased on experimentally determined parameters, we analyzed numerically the amplification characteristics. The slow dynamics of the amplifier were explored using long input signal pulses. The proposed amplifier is found to be suitable for amplification of nano and sub-nano second pulses. Further analysis of amplification in the femto-second pulse duration is under progress.4. Fabrication of Er doped garnet crystal thin films using LPEIn order to fabricate better crystal thin films, we set up LPE apparatus, and selected GGG and YIG as substrate material and film host material, respectively. Computer control of the fabrication conditions such as substrate rotation, temperature, etc.was set up. The actual fabrication of active ion doped crystal films is in progress.