Development of MOS Capacitor Dissolved Oxygen Sensor for Use in High-Temperature Solutions

开发用于高温解决方案的 MOS 电容器溶解氧传感器

• 批准号: 07555214
• 负责人: HARA Nobuyoshi
• 金额: $ 4.74万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555214/
• 关键词: Dissolved oxygen sensor; High temperature aqueous solution; MOS capacitor; EOS capacitor; Corrosion potential; 溶存酵素センサ; 貴金属

New dissolved oxygen sensors based on metal-oxide-semiconductor (MOS) and electrolyte-oxide-semiconductor (EOS) devices have been developed for the measurement of oxygen concentration in high-temperature and high-pressure aqueous solutions. The results are summarized as follows ;1. The system that can be served for the measurement of response characteristics of MOS and EOS capacitor sensors at elevated temperatures was designed and constructed.2. Pt-PtO_x electrodes displayd a rapid response to changes in O_2 concentration and had a high resistance against corrosion at elevated temperatures.3. The porous Pt-MOS capacitor sensor fabricated using a single crystal silicon as a semiconductor showed a linear relationship between the response voltage and log [DO concentration] at temperatures of 303-363K.However, this sensor suffered from cracking at temperatures above 423K.4. The Pt-EOS sensor combining a bulk Pt electrode with a semiconductor electrode of TiO_2 single crystal displayd the same DO response characteristics as the Pt-MOS sensor, and had a good stability even at temperatures above 423K.5. Calibration curves, which provide the relationships between the DO concentration and the response voltage of the Pt-EOS sensor, were obtained.

基于金属氧化物半导体（MOS）和电解质氧化物半导体（EOS）器件的新型溶解氧传感器已被开发出来，用于测量高温高压水溶液中的氧浓度。研究结果总结如下： 1．设计并构建了可用于MOS和EOS电容传感器高温响应特性测量的系统。 2． Pt-PtO_x电极对O_2浓度的变化具有快速的响应能力，并且在高温下具有较高的耐腐蚀性。 3．使用单晶硅作为半导体制造的多孔Pt-MOS电容器传感器在303-363K的温度下表现出响应电压与log[DO浓度]之间的线性关系。然而，该传感器在423K以上的温度下出现破裂。4。将块体Pt电极与TiO_2单晶半导体电极相结合的Pt-EOS传感器表现出与Pt-MOS传感器相同的DO响应特性，并且即使在423K.5以上的温度下也具有良好的稳定性。获得了校准曲线，该曲线提供了 Pt-EOS 传感器的 DO 浓度和响应电压之间的关系。

项目成果

Nobuyoshi Hara: "Dissolved Hydrogen and Oxygen Sensors Using Semiconductor Devices" Materia Japan. 34. 1221-1226 (1995)

Nobuyoshi Hara：“使用半导体器件的溶解氢和氧传感器”Materia Japan。

原 信義: "半導体デバイス型DHおよびDOセンサ" まてりあ. 34. 1221-1226 (1995)

Nobuyoshi Hara：“半导体器件类型 DH 和 DO 传感器”Materia。 34. 1221-1226 (1995)