Development of MOS Capacitor Dissolved Oxygen Sensor for Use in High-Temperature Solutions

开发用于高温解决方案的 MOS 电容器溶解氧传感器

• 批准号: 07555214
• 负责人: HARA Nobuyoshi
• 金额: $ 4.74万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555214/
• 关键词: Dissolved oxygen sensor; High temperature aqueous solution; MOS capacitor; EOS capacitor; Corrosion potential; 溶存酵素センサ; 貴金属

New dissolved oxygen sensors based on metal-oxide-semiconductor (MOS) and electrolyte-oxide-semiconductor (EOS) devices have been developed for the measurement of oxygen concentration in high-temperature and high-pressure aqueous solutions. The results are summarized as follows ;1. The system that can be served for the measurement of response characteristics of MOS and EOS capacitor sensors at elevated temperatures was designed and constructed.2. Pt-PtO_x electrodes displayd a rapid response to changes in O_2 concentration and had a high resistance against corrosion at elevated temperatures.3. The porous Pt-MOS capacitor sensor fabricated using a single crystal silicon as a semiconductor showed a linear relationship between the response voltage and log [DO concentration] at temperatures of 303-363K.However, this sensor suffered from cracking at temperatures above 423K.4. The Pt-EOS sensor combining a bulk Pt electrode with a semiconductor electrode of TiO_2 single crystal displayd the same DO response characteristics as the Pt-MOS sensor, and had a good stability even at temperatures above 423K.5. Calibration curves, which provide the relationships between the DO concentration and the response voltage of the Pt-EOS sensor, were obtained.

基于金属氧化物半导体（MOS）和电解质氧化物半导体（EOS）器件的新型溶解氧传感器已被开发用于测量高温高压水溶液中的氧浓度。研究结果如下：1.设计并搭建了MOS和EOS电容传感器高温响应特性测试系统. Pt-PtO_x电极对氧浓度变化的响应速度快，耐高温腐蚀性能好.以单晶硅为半导体的多孔Pt-MOS电容传感器在303- 363 K温度范围内，响应电压与溶解氧浓度对数呈线性关系，但在423 K以上温度下出现裂纹。将体Pt电极与TiO_2单晶半导体电极相结合的Pt-EOS传感器显示出与Pt-MOS传感器相同的DO响应特性，即使在423 K以上也具有良好的稳定性。标定曲线，提供了溶解氧浓度和Pt-EOS传感器的响应电压之间的关系，得到。

项目成果

Nobuyoshi Hara: "Dissolved Hydrogen and Oxygen Sensors Using Semiconductor Devices" Materia Japan. 34. 1221-1226 (1995)

Nobuyoshi Hara：“使用半导体器件的溶解氢和氧传感器”Materia Japan。

原 信義: "半導体デバイス型DHおよびDOセンサ" まてりあ. 34. 1221-1226 (1995)

Nobuyoshi Hara：“半导体器件类型 DH 和 DO 传感器”Materia。 34. 1221-1226 (1995)