课题基金 / 基金详情

Formation of High Corrosion Resistant Artificial Passivation Films by LP-MOCVD

Formation of High Corrosion Resistant Artificial Passivation Films by LP-MOCVD
LP-MOCVD 形成高耐蚀人工钝化膜
批准号:
03650565
负责人:
HARA Nobuyoshi
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992

项目摘要

项目成果

HARA Nobuyoshi的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Single oxide films of Al_2O_3, TiO_2, Ta_2O_5, ZrO_2 and SiO_2, and composite oxide Films of Fe_2O_3-Cr_2O_3-NiO and Ta_2O_5-ZrO_2 have been formed on Pt substrates by metal organic chemical vapor deposition (MOCVD) technique. The corrosion resistance of these films were examined in 5M-HCl and 5M-NaOH by the measurement of film thickness using ellipsometry and the chemical analysis of test solutions using inductively-coupled plasma-emission spectroscopy.It was found that the corrosion resistance of the single oxide films increased in the following order: Al_2O_3<TiO_2<SiO_2<ZrO_2<Ta_2O_5 in 5M-HCl, and Al_2O_3<SiO_2<TiO_2<Ta_2O_5<ZrO_2 in 5M-NaOH. Composite oxide films of Ta_2O_5-ZrO_2 having cationic mass fraction of Ta^<5+> ions between 0.3 and 0.5 showed the highest corrosion resistance against both the HCl and NaOH solutions. The dissolution rate of Fe_2O_3-Cr_2O_3 composite films in 5M-HCl decreased exponentially with an increase in the cationic mass fraction of Cr^<3+> ions, X_<cr>, of the films. The same type of changes in the dissolution rate with X_<cr> was also observed for the NiO-Cr_2O_3 composite films. On the other hand, the addition of NiO to Fe_2O_3-Cr_2O_3 composite films containing adequate amount of Cr_2O_3 did not bring an effective improvement in corrosion resistance. The corrosion resistance of SiO_2-coated SUS304 stainless steels increased with increasing thickness and formation temperature of the SiO_2 films.
期刊论文(4)
专著(0)
科研奖励(0)
会议论文
Shuji Kikkawa: "Tetsu Go, Nobuyoshi Hara, and Katsuhisa Sugimoto "Formation of SiO_2 Protective Coating on SUS304 Stainless Steel by Chemical Vapor DEposition Using TEOS-O_3 Gas System"" Zairyou-To-Kankyo (Corrosion Engineering). Vol.42, No.5. (1993)
Shuji Kikkawa:“Tetsu Go、Nobuyoshi Hara 和 Katsuhisa Sugimoto“使用 TEOS-O_3 气体系统通过化学气相沉积在 SUS304 不锈钢上形成 SiO_2 保护涂层”“Zairyou-To-Kankyo(腐蚀工程)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Katsuhisa Sugimoto,: "Mashahiro Seto, Shigeaki Tanaka, and Nobuyoshi Hara, "Corrosion Resistance of Artificial Passivation Films of Fe_2O_3-Cr_2O_3-NiO Formed by MOCVD"" Journal of the Electrochemical Society,. Vol.140. (1993)
Katsuhisa Sugimoto,:“Mashahiro Seto、Shigeaki Tanaka 和 Nobuyoshi Hara,“MOCVD 形成的 Fe_2O_3-Cr_2O_3-NiO 人工钝化膜的耐腐蚀性””《电化学学会杂志》,。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Katsuhisa SUGIMOTO: "Corrosion Resistance of Artificial Passivation Films of Fe_2O_3-Cr_2O_3-NiO Formed by MOCVD" Journal of the Electrochemical Society. 140. (1993)
Katsuhisa SUGIMOTO:“MOCVD形成的Fe_2O_3-Cr_2O_3-NiO人工钝化膜的耐腐蚀性”电化学学会杂志。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
吉川 周仁: "TEOS-O_3系CVDによるSUS304ステンレス鋼上へのSiO_2防食被覆の形成" 材料と環境. 42. (1993)
Shuhito Yoshikawa:“通过基于 TEOS-O_3 的 CVD 在 SUS304 不锈钢上形成 SiO_2 腐蚀保护涂层”,材料与环境,42。(1993)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Development of CWD process for surface treatment of magnesium
  • 批准号:
    22656159
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
  • 资助金额:
    $2.21万
  • 财政年份:
    2010
  • 负责人:
    HARA Nobuyoshi
  • 依托单位:
Development of green stainless steels by micro-and nano-scale surface design and control
  • 批准号:
    20246106
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 资助金额:
    $31.37万
  • 财政年份:
    2008
  • 负责人:
    HARA Nobuyoshi
  • 依托单位:
Development of an External Pressure Balance Reference Electrode for Use in Supercritical Water Systems
  • 批准号:
    14350377
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $10.94万
  • 财政年份:
    2002
  • 负责人:
    HARA Nobuyoshi
  • 依托单位:
Cathodic Degradation of Passive Films on Ti in High-Level Radioactive Waste Disposal Environments
  • 批准号:
    10450266
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
  • 资助金额:
    $9.02万
  • 财政年份:
    1998
  • 负责人:
    HARA Nobuyoshi
  • 依托单位:
国内基金
海外基金
面向高性能集成电路的晶圆级单晶二维半导体的MOCVD精准生长及智能优化
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2025
  • 负责人:
    王震宇
  • 依托单位:
MOCVD法制备用于微光夜视技术的GaSb红外光阴极及其激活技术研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    55万元
  • 批准年份:
    2022
  • 负责人:
    王连锴
  • 依托单位:
宽带宽InAs量子点MOCVD生长调控机理研究
高品质硅基立式InAs/GaSb异质结纳米线阵列MOCVD自催化生长研究
  • 批准号:
    61904074
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    26.0万元
  • 批准年份:
    2019
  • 负责人:
    王小耶
  • 依托单位: