RESEARCH OF PARTICLE TYPE PRESSURE MICROSENSOR

点击翻译按钮获取中文摘要

Diamond ; A pressure micro sensor made of p-type diamond film was developed. A boron-doped diamond film of 2mum thick was grown on a non-doped polycrystalline diamond substrate by a conventional microwave plasma chemical vapor deposition system. A strain gauge pattern (path size : 500mum*50mum) was produced by photolithography and reactive ion etching in oxygen plasma. A diaphragm structure was fabricated by mounting the diamond substrate on the base with a through hole. Relative change in the electrical resistance of the pressure sensor was proportional to the applied strain. Gauge factor of the sensorwas about 20 at room temperature.Zn0 ; Piezoelectric properties of a zinc-oxide (ZnO) thin film were investigated. The ZnO thin film was grown on a silicon substrate by a plasma-enhanced metal organic chemical vapor deposition (MOCVD) . In order to enhance its resistivity, lithium (Li) was doped. The Li-doped ZnO thin film had higher electrical resistivity than non Li-doped one. A diaphragm structure for a pressure sensor was fabricated with a diamond drilling and chemical etching. Resonant frequency test was carried out to measure piezoelectric properties of a pressure micro sensor.