RESEARCH OF PARTICLE TYPE PRESSURE MICROSENSOR

颗粒式压力微传感器的研究

• 批准号: 07650306
• 负责人: KOTERA Hidetoshi
• 金额: $ 1.34万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650306/
• 关键词: PRESSUE SENSOR; MICROMASHINE; MEMS; PIEZOELECTICITY; ZnO THIN FILM; DIAMOND THIN FILM; 有限要素法解析; マイクロ圧力センサー; ダイヤモンド; ZnO

Diamond ; A pressure micro sensor made of p-type diamond film was developed. A boron-doped diamond film of 2mum thick was grown on a non-doped polycrystalline diamond substrate by a conventional microwave plasma chemical vapor deposition system. A strain gauge pattern (path size : 500mum*50mum) was produced by photolithography and reactive ion etching in oxygen plasma. A diaphragm structure was fabricated by mounting the diamond substrate on the base with a through hole. Relative change in the electrical resistance of the pressure sensor was proportional to the applied strain. Gauge factor of the sensorwas about 20 at room temperature.Zn0 ; Piezoelectric properties of a zinc-oxide (ZnO) thin film were investigated. The ZnO thin film was grown on a silicon substrate by a plasma-enhanced metal organic chemical vapor deposition (MOCVD) . In order to enhance its resistivity, lithium (Li) was doped. The Li-doped ZnO thin film had higher electrical resistivity than non Li-doped one. A diaphragm structure for a pressure sensor was fabricated with a diamond drilling and chemical etching. Resonant frequency test was carried out to measure piezoelectric properties of a pressure micro sensor.

钻石 ;研制了一种由p型金刚石薄膜制成的压力微型传感器。采用传统的微波等离子体化学气相沉积系统在非掺杂多晶金刚石基底上生长了2μm厚的硼掺杂金刚石薄膜。应变仪图案（路径尺寸：500mum*50mum）是通过光刻和氧等离子体中的反应离子蚀刻产生的。通过将金刚石基板安装在带有通孔的底座上来制造隔膜结构。压力传感器电阻的相对变化与施加的应变成正比。室温下传感器的应变系数约为20。Zn0;研究了氧化锌（ZnO）薄膜的压电特性。通过等离子体增强金属有机化学气相沉积（MOCVD）在硅衬底上生长ZnO薄膜。为了提高其电阻率，掺杂了锂（Li）。 Li掺杂ZnO薄膜比非Li掺杂ZnO薄膜具有更高的电阻率。通过金刚石钻孔和化学蚀刻制造了压力传感器的隔膜结构。进行谐振频率测试来测量压力微传感器的压电特性。

项目成果

H.Kotera: "Hi.Tanaka and S.Shima, Piezoelectric Property of CVD ZnO Film for Pressure Micro Sensor" Advancees in Information Storage Systems, Spetial Edition. (in printing). (1998)

H.Kotera：“Hi.Tanaka 和 S.Shima，用于压力微传感器的 CVD ZnO 薄膜的压电特性”信息存储系统进展，特别版。

H.Kotera: "Pressure Micro Sensor of p-type CVD Diamond Film" Advancees in Information Storage Systems, Spetial Edition. (in printing). (1998)

H.Kotera：“p 型 CVD 金刚石薄膜的压力微传感器”信息存储系统进展，特别版。

Hidetoshi Kotera: "Piezoresistive Properties of p_-Type CVD Diamond Films" Diamond Films and Technology. Vol.6,No2.77-85 (1996)

Hidetoshi Kotera：“p_型 CVD 金刚石薄膜的压阻特性”金刚石薄膜和技术。

Hidetoshi Kotera: "Pressure Micro Sensor of p-type CVD Diamond Film" Avdances in Information Storage System (AISS). Spetial Edition (in Printing). (1998)

Hidetoshi Kotera：“p 型 CVD 金刚石薄膜压力微型传感器”信息存储系统 (AISS) 领域的进步。

Hidetoshi Kotera: "Piezorelectric Property of CVD ZnO Film for Pressure Micro Sensor" Avdances in Information Storage System (AISS). Spetial Edition (in Printing). (1998)

Hidetoshi Kotera：“用于压力微传感器的 CVD ZnO 薄膜的压电特性”信息存储系统 (AISS) 的进步。