Control of mechanical properties of micro-material
Control of mechanical properties of micro-material
批准号:
10650258
负责人:
KOTERA Hidetoshi
金额:
$2.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
1) We measure the thickness of the diffusion layer and the distribution of atoms by Auger electron spectroscopy (AES) and investigate the effect of fabrication process on the diffusion layer。We chose Al and SiO-D22-D2 thin films deposited on a silicon wafer, since SiO-D22-D2 and Al thin films are commonly used for the MEMS。In practice,Sio-D22 thin film is used as a dielectric layer, that is,Sio-D22-D2 is sandwiched between an electrode or?ing and the other material。SiO-D22-D2电影也被用作屏蔽或停止层的材料,因此,它作为一种结构起作用,它是诊断或半导体的基础。在另一手上, Al被用作电子或布线。在MEMS的制造过程中,薄薄膜可能被提交热处理:退火将导致减少薄膜中的永久压力;当附加材料被沉积,该基底应该被加热。在这项研究中,我们考察了原子的分布。 ... More in films of Al and SiO-D22-D2 and silicon wafer by AES, and we discuss the effect of heat treatment on the distribution of the atoms. 2) We propose a new tensile test method。在一部薄薄的电影上建立了一个预先制作的测试基础,已经开发了。我们的方法的概念就像遵循一样。第一,在硅基底上,间隙部分被表面微加工作为光子学和湿加工而成。在制造测试基底之后,张力测试被证明是为了衡量年轻人的测试基底的模块。第二,我们所关注的薄电影是建立在预先制作的测试基础上的。最后,张力测试又开始了。Young's modulus of the thin film可以通过抵消Young's modulus of the prefabricated test substrate来衡量。由于这一目标,我们还开发了一个新的张力测试设备和一个测试基础持有人。我们讨论这个方法的可行性,以衡量沉积的薄膜的机械属性(3)我们清除了内部机械约束对薄膜属性的影响。通过控制薄膜的紧张关系,我们可以控制薄膜的机电性能.(4)提出了一种优化微机电设备和系统(MEMS)动态的模拟方法。一系列的电静态场、流体动力学和微膜薄膜是偶联和解决的,同样地。自从遗传算法能够减少寻找解决方案的空间以来,遗传算法已经被用来优化微膜的厚度分布。作为所开发方法的应用,微型空气泵的微型薄膜的厚度分布是最佳的。这表明,厚度分布与微薄膜中弯曲应变的分布有关。Less(低)
英文摘要
1) We measure the thickness of the diffusion layer and the distribution of atoms by Auger electron spectroscopy (AES) and investigate the effect of fabrication process on the diffusion layer. We chose Al and SiOィイD22ィエD2 thin films deposited on a silicon wafer, since SiOィイD22ィエD2 and Al thin films are commonly used for the MEMS. In practice, SiOィイD22ィエD2 thin film is used as a dielectric layer, that is, SiOィイD22ィエD2 is sandwiched between an electrode or wiring and the other material. The SiOィイD22ィエD2 film is also employed as the material for masking or etch-stop layer, and therefore, it works as a structure, that is, substrate for diaphragms or cantilevers. On the other hand, Al is used as an electrode or wiring.In the fabrication process of MEMS, the thin films may be subjected to heat treatment : annealing is carried out to reduce residual stress in the films; when additional material is deposited, the substrate should be heated. In this study, we examine the distribution of atoms th … More in films of Al and SiOィイD22ィエD2 and silicon wafer by AES, and we discuss the effect of heat treatment on the distribution of the atoms.2) We propose a new tensile test method. A prefabricated test substrate on which a thin film is deposited is developed. The concept of our method is as follows. First, on a silicon substrate, gage portion is prefabricated by the surface micro-machining such as a photolithography and wet etching. After fabricating the test substrate, tensile test is performed to measure Young's modulus of the test substrate. Second, the thin film we are concerned is deposited on the prefabricated test substrate. Finally, the tensile test is again carried out. Young's modulus of the thin film can be measured by subtracting the effect of Young's modulus of the prefabricated test substrate. For the purpose of this, we also develop a new tensile test equipment and a test substrate holder. We discuss the viability of this method for measuring the mechanical properties of deposited thin film.3) We make clear the effect of internal mechanical strain on the thin film properties. By controlling the strain of thin film, we can control the electromechanical properties of thin film for MEMS.4) A simulation method for optimizing dynamic of micro-electro-mechanical devices and systems (MEMS) is proposed. A series of equations of electrostatic field, fluid dynamics and deflection of micro-membrane are coupled and solved simultaneously. Since the genetic algorithm is appropriate to reduce the searching space of solution, the genetic algorithm is used to optimize the thickness distribution of a micro-membrane. As an application of the developed method, the thickness distribution of the micro-membrane of a micro air pump is optimized. It is shown that the thickness distribution relates to the distribution of bending strain of the micro-membrane. Less
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Hidetoshi Kotera: "A study of the effect of the fabrication process on diffusion in a layered thin film"Microsystim Technologies. Vol.5, No.4.. 169-172 (1999)
Hidetoshi Kotera:“制造工艺对层状薄膜扩散影响的研究”Microsysstim Technologies。
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Hidetoshi Kotera: "A study of the effect of the fabrication process on diffusion in a layered thin film"Microsystem Technologies. Vol.5, No4. 169-172 (1999)
Hidetoshi Kotera:“制造工艺对层状薄膜扩散影响的研究”Microsystem Technologies。
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H.Kotera: "Dynamic Simulation Method of MEMS Coupling Electrostatic Field,Fluid Dynamics and Membrane Deflection" Microsystem Technologies 98. 491-496 (1998)
H.Kotera:“MEMS耦合静电场、流体动力学和膜偏转的动态模拟方法” Microsystem Technologies 98. 491-496 (1998)
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Hidetoshi Kotera: "Shape Optimization for Dynamic Response of Micro-Membrane By Genetic Algorithm"ASME PVP. Vol.397-2. 227-232 (1999)
Hidetoshi Kotera:“通过遗传算法优化微膜动态响应”ASME PVP。
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通讯作者:
Hidetoshi Kotera: "A study of the effect of the fabrication process on diffusion in a layered thin film"Microsystem Technologies. Vol.5,No.4. 169-172 (1999)
Hidetoshi Kotera:“制造工艺对层状薄膜扩散影响的研究”Microsystem Technologies。
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共 6 条
Research work of reconfigurable millimeter wave antenna
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批准号:15201033
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.03万
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财政年份:2003
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负责人:KOTERA Hidetoshi
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依托单位:
High performance Micro-Materials and micro-TAS by controlling high ordered Nano-Structures
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批准号:12450102
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.66万
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财政年份:2000
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负责人:KOTERA Hidetoshi
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依托单位:
RESEARCH OF PARTICLE TYPE PRESSURE MICROSENSOR
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批准号:07650306
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1995
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负责人:KOTERA Hidetoshi
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依托单位:
海外基金