Study on GaN and Pelated Compound Crystal Growth By ECR-MBE for Blue Lase

蓝色激光ECR-MBE生长GaN和板状化合物晶体的研究

• 批准号: 07650385
• 负责人: NANISHI Yasushi
• 金额: $ 1.47万
• 依托单位: Ritsumeikan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650385/
• 关键词: Blue Laser; ECR-MBE; Optical emission spectroscopy; Low temperature Growth; lon; Radical; GaN; cubic; GaN; 原子レベル制御

Fundamental studies on GaN and related compound crystal growth were carried out by using electron-cyclotron-resonance molecular-beam-epitaxy (ECR-MBE) for semiconductor laser diode emitting in blue to ultra-violet light. ECR-MBE,which can effectively utilize excited species including atomic and molecular radicals and ions even in ultra high vacuum atmosphere, has several advantages over conventional epitaxial growth methods, which include 1)low temperature growth 2)on need for hydrogen gas 3)capability forin-situ observation by optical emission spectroscopy and 4)precise thickness control in atomic scale.Several useful experimental results are obtained from these studies. These include1)From optical emission spectroscopy, dominant excited species for GaN MBE growht were found to be atomic nitrogen. It was further found that hydrogen and helium gas addition to nitrogen gas is effective in obtaining excited species and as aresults in increasing growth rate. 2)Cubic and hexagonal crystal structure control was successfully realized by both III to V ratio and electric bias voltage. Both mechanism can be equally explained by effective III to V ratio control on the growing surface during growth. 3)LigaO_2 was found to be a suitable substrate for GaN MBE growth with is small lattice mismatch of around 1% to GaN.4)Growth mechanism explaining ECR-MBE growth should include desorption process induced by impinging ionic species.

利用电子-回旋共振分子束外延（ECR-MBE）技术，对蓝-紫外光半导体激光二极管进行了氮化镓及相关化合物晶体生长的基础研究。ECR-MBE即使在超高真空环境下也能有效利用原子、分子自由基和离子等激发态，与传统外延生长方法相比，具有低温生长、不需要氢气、可进行发射光谱原位观测、原子尺度上精确厚度控制等优点。从这些研究中获得了几个有用的实验结果。这包括：1)从发射光谱上发现，GaN MBE生长的优势激发态是原子氮。进一步发现，在氮气中加入氢气和氦气可以有效地获得激发态，从而提高生长速度。2)通过III / V比和偏置电压成功地实现了立方和六方晶体结构的控制。两种机理都可以用生长过程中生长表面有效的III / V比控制来解释。3)LigaO_2是生长GaN MBE的合适底物，与GaN的晶格失配较小，约为1%。4) ECR-MBE的生长机制应该包括离子碰撞引起的脱附过程。

项目成果

Y.Chiba, Y.Nanishi 他: "Optical Emission Spectroscopy as the Monitoring Tool in ECR-MBE Growth of GaN" Proc.of the Second ICNS'97. P2-43. 322 (1997)

Y.Chiba, Y.Nanishi 等人：“光学发射光谱作为 GaN ECR-MBE 生长的监测工具”，第二届 ICNS97 (1997)。

名西やす之: "ECRプラズマ励起MBE法による化合物半導体の結晶成長機構" 日本結晶成長学会誌. 23,3. 179- (1996)

Yasuyuki Nanishi：“ECR等离子体增强MBE方法的化合物半导体的晶体生长机制”日本晶体生长学会杂志23,3-（1996）。

Y.Chiba, Y.Nanishi et al.: "Optical Emission Spectroscopy as the Monitoring Tool in ECR-MBE Growth of GaN" Journal of Crystal Growth. (Accepted for Publication).

Y.Chiba、Y.Nanishi 等人：“发射光谱作为 GaN ECR-MBE 生长的监测工具”《晶体生长杂志》。

千葉、名西: "ECR窒素プラズマの発光分光分析" 平成8年 電気関係学会連合大会講演論文集. G-261- (1996)

千叶美史：《ECR氮等离子体的发射光谱分析》1996年电气相关学会联合会会议论文集G-261-（1996）。

M.Okada, Y.Nanishi et al.: "ECR-MBE Growth of GaN on LiGaO_3" Journal of Crystal Growth. (Accepted for Publication).

M.Okada、Y.Nanishi 等人：“LiGaO_3 上 GaN 的 ECR-MBE 生长”晶体生长杂志。