Preparation and Diclectric Properties of Ferroelectric BaTiO_3 Thin Films by Sol-Gel Method
Preparation and Diclectric Properties of Ferroelectric BaTiO_3 Thin Films by Sol-Gel Method
批准号:
07651020
负责人:
HAYASHI Takashi
金额:
$1.34万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
BaTiO_3 thin films have been intensively investigated for application to multilayr capacitors, ferroelectric memories, pyroelectric detectors and electrooptic devices. A number of techniques such as sputtering, vacuum evaporation, metalorganic decomposition and sol-gel methods have been used to prepare BaTiO_3 thin films. Recently, BaTiO_3 thin films that exhibit P-E hysteresis loops have been prepared by activated reactive evaporation, , pulsed laser decomposition and sol-gel methods. However, in the dielectric constant -temperaturecharacteristic curves of BaTiO_3 thim films prepared by sol-gel method, a curie peak was not observed at a temperature around 120゚C.In this work, BaTiO_3 thin films were prepared by sol-gel method. In order to prepare BaTiO_3 thin films with relatively large grains, the processing temperature as high as 850゚C was utilized, facilitating the use of Pt plate. Their crystallinity, surface morphology and electrical properties of BaTiO_3 thin films prepared on Pt … More substrate at 850゚C were examined.The BaTiO_3 thin films on Pt substrate exhibited a slightly coares grain microstructure with grain sizes of about 50nm. And, the microstructure of single-layr films showed inhomogeneous texture with large isolated grains of about 450nm. Increasing with the cycles of coating/heating process, fine grains as small as about 100nm seemed to grow from the surfaces of large isolated grains and, finally, thin films prepared by multiple coating/heating processes were strongly textured with fine grains. That is, the grain sizes of the top layr of the multilayr thin films were always much finer than those of the first coating.P-E hysteresis loops of BaTiO_3 thin films prepared on Pt indicated well-saturated hysteresis loops. And, these thin films prepared exhibited Pr of 3.8 and Ec of 20kV/cm at room temperature. The thin films on Pt substrate exhibited epsilonr of about 830 and tan delta of 0.04 at room temperature. And, inthese films, the curie peak was not seen at about 120゚C.However, broad curie peaks were observed at around 70゚C.The difference of the curie temperatures may be due to the effect of BaTiO_3 sizes and the microstructure. Less
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Takashi HAYASHI: "Preparation and Dielectric Properties of SrTiO_3/BaTiO_3 Multilayer Thin Films by Sol-Gel Method" Jpn. J. Appl. Phys.34. 5100-5104 (1995)
Takashi HAYASHI:“溶胶-凝胶法制备SrTiO_3/BaTiO_3多层薄膜及其介电性能”Jpn。
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通讯作者:
Takashi HAYASHI: "Chemical Frocessing and Dielectric Properties of Ferroelectric SrBi_2Ta_2O_9 Thin Films," Jpn.J.Appl.Phys.35. 4952-4955 (1996)
Takashi HAYASHI:“铁电 SrBi_2Ta_2O_9 薄膜的化学处理和介电性能”,Jpn.J.Appl.Phys.35。
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Hisao SUZUKI: "Low-Temperatare Prcessing of Ferroelctric Pb (Zr0.53 Ti0.47) O_3 Thin Films from Molecular-Desigued AIRoxide Procusor Solution" Jpn.J.Appl.Phys.35. 4896-4899 (1996)
Hisao SUZUKI:“从分子设计的空气氧化物前体溶液中低温处理铁电 Pb (Zr0.53 Ti0.47) O_3 薄膜”Jpn.J.Appl.Phys.35。
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Takashi HAYASHI: "ドクターブレ-ド法によるBaTiO_3繊維からの異方性BaTiO_3の合成と評価" 材料. 45. 620-623 (1996)
Takashi HAYASHI:“通过刮刀法从 BaTiO_3 纤维合成和评价各向异性 BaTiO_3”材料 45. 620-623 (1996)。
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Hisao Suzuki: "Low-Temperature Processing of Ferroelectric Pb (Zr_<0.53>, Ti_<0.47>)O_3 Thin Films from Molecular-Designed Alkoxide Precursor Solution" Jpn.J.Appl.Phys.35. 4896-4899 (1996)
Hisao Suzuki:“从分子设计的醇盐前体溶液中低温加工铁电 Pb (Zr_<0.53>, Ti_<0.47>)O_3 薄膜”Jpn.J.Appl.Phys.35。
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