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Analysis of Materials in Random System by Quantitative High-Resolution Transmission Electron Microscopy and Electron Diffraction

通过定量高分辨率透射电子显微镜和电子衍射分析随机系统中的材料

基本信息

批准号：
08404019
负责人：
SHIOJIRI Makoto
金额：
$ 2.18万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

项目摘要

Materials in random systems exhibit characteristic properties which are ascribed to their structure, and thereby allow us to produce new functional devices. The structure analysis of materials in topological or cellular random system is the key point to understand their properties. The object of this project is to analyze the crystallographic structure of various materials in topological or cellular random system using quantitative high-resolution electron microscopy (HRTEM) and electron diffraction (ED) method. The results obtained in this project have been reported in literatures shown in the next section. The main subjects and results are as follows :1. The crystal and magnetic structure of BaSn_<2-x>Ti_xFe_4O_<11>, BiFeO_3, CaMn7O_<12> and Ba_3Ca1_<+x>Nb_<2-x>O_<9-8>, which are in cellular random system, have been analyzed using neutron and synchrotron X-ray diffraction method, and discussed taking account of the results of quantitative HRTEM.2. Ferromagnetism and structural distor … More tions induced in atomized Fe_<1-x>Al_x (x=0.35-0.42) powder particles by cold milling have been investigated using cross-sectional HRTEM.3. Random phenomena such as the distribution of oxygen vacancies and additive atoms in semiconducting SrTiO_3-based ceramics, the distribution of O, N, and P atoms in DRAM, the atom diffusion and precipitation in GaAs/AlGaAs multilayer heterostructure and the adsorption of photosensitive dye molecules on the AgBr surface have been disclosed using HRTEM, ED and high angle annular dark field STEM method with the aid of cathodoluminescence scanning electron microscopy, energy dispersive X-ray spectroscopy, electron energy loss spectroscopy.4. ED intensity of Se, Sb, and C amorphous films has been measured on imaging plates in a high-resolution electron microscope with an energy filter, to elucidate the structure of these amorphous films. The quantitative intensity measurements of equal thickness fringes appearing in wedge-shaped crystals, which are correlated with ED intensity, have been performed. Less

随机系统中的材料表现出归因于其结构的特性，从而使我们能够生产新的功能器件。材料在拓扑或胞腔随机系统中的结构分析是理解其性质的关键。本计画的目的是利用定量高解析电子显微术（HRTEM）与电子绕射（艾德）分析各种材料在拓扑或胞状随机系统中的晶体结构。在本项目中获得的结果已在下一节所示的文献中报告。主要研究内容和结果如下：1.本文用中子和同步辐射X射线衍射方法分析了胞状无规体系BaSn_<2-x>Ti_xFe_4O_<11>，BiFeO_3，CaMn_7O_<12>，Ba_3Ca_（1 +x）Nb_<2-x>O_<9-8>的晶体结构和磁结构，并结合高分辨电子显微镜的定量结果进行了讨论.铁磁性与结构畸变 ...更多信息利用<1-x>截面高分辨透射电子显微镜（HRTEM）研究了冷磨雾化Fe_ Al_x（x=0.35-0.42）粉末颗粒中诱发的离子。3.用高分辨透射电镜（HRTEM）研究了SrTiO_3基半导陶瓷中氧空位和添加原子的分布，DRAM中O、N、P原子的分布，GaAs/AlGaAs多层异质结构中原子的扩散和沉淀，AgBr表面光敏染料分子的吸附等随机现象。艾德和高角度环形暗场STEM方法，借助阴极发光扫描电子显微镜、X射线能量色散谱、电子能量损失谱.在带有能量过滤器的高分辨电子显微镜中的成像板上测量了Se、Sb和C非晶膜的艾德强度，以阐明这些非晶膜的结构。对楔形晶体中出现的等厚条纹进行了强度定量测量，并与艾德强度进行了关联。少