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Control of local surface strain by using EB process

使用 EB 工艺控制局部表面应变

基本信息

批准号：
08455153
负责人：
OZASA Kazunari
金额：
$ 4.8万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455153/
关键词：
Gallium flouride Indium flouride Electron beam irradiation Surface strain Replacement of arsenic phosphorus Self-organization of dots CBE その場歪量子ドット

项目摘要

In situ composition change of self-organized InGaAs dots has been investigated by means of the control of arsenic/phosphorus supply in chemical beam epitaxy. Due to the replacement of arsenic/phosphorus atoms in the dots by ambient phosphorus/arsenic, surface structure changes from the InGaAs dots to an InGaAsP flat surface and vice versa according to the arsenic/phosphorus exposure. Transitional surfaces between the dot structure and a flat surface were metastabilized and observed ex situ to figure out the dot formation process. It was found that the density of well-developed dots (not the size of dense dots) was increasing during the dot formation. Two new approaches to modifying the dot strucure in situ by using the arsenic/phosphorus replacement technique were demonstrated. For InAs dot reformation, smaller InAs dots disappeared and larger InAs dots were formed instead. In the examination of additional suppy of indium or gallium during step-by-step dot reformation with pulse AsH_3 exposure, the coalescence of dots occurred due to excess strain only in the case of indium addition. Thin films of gallium flouride or indium flouride were fabricated by exposuring GaAs or InP to electron cyclotron plasma of flourine. The flouride films were found to be electron beam (EB) sensetive, that the decomposition reaction occurs by EB irradiation.

通过控制化学束外延中砷/磷的供应，研究了自组织InGaAs点的原位成分变化。由于点中的砷/磷原子被周围的磷/砷取代，表面结构根据砷/磷暴露从InGaAs点变为InGaAsP平坦表面，反之亦然。点结构和平坦表面之间的过渡表面被亚稳定并异位观察，以弄清楚点的形成过程。发现在点形成过程中，发达点的密度（不是密集点的尺寸）不断增加。展示了两种使用砷/磷替代技术原位修改点结构的新方法。对于InAs点重组，较小的InAs点消失，取而代之的是形成较大的InAs点。在脉冲AsH_3曝光的逐步点重组过程中对铟或镓的额外供应的检查中，仅在添加铟的情况下由于过度应变而发生点的合并。通过将 GaAs 或 InP 暴露于氟电子回旋等离子体来制备氟化镓或氟化铟薄膜。发现氟化物薄膜对电子束（EB）敏感，在EB照射下发生分解反应。