Development of velicity selector for metal atom and its application in thermal engineering

金属原子速度选择器的研制及其在热能工程中的应用

• 批准号: 08555051
• 负责人: INOUE Takayoshi
• 金额: $ 2.69万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555051/
• 关键词: Velocity Selector; Translational Energy; Metal atom; Deposition; Thin film

To study the control of the thin film condensation process with the translational energy of incident atom, crystalline structures of Bi_2Te_3 films and Bi, Te films, which are deposited on (001) NaCl, (001) MgO and glass by the vacuum deposition method with a Hostettler-Bernstien velocity selector, have been investigated by measurement thermoelectric power of film and the observation by a transmission electron microscopy. Thin films are affected by not only substrate temperature but also velocity of incident atoms greatly. We could obtain good thermoelectric element when we made films at a certain substrate temperature with velocity selector. However we could not clarify the effect of incident frequency on the deposition process, because it is difficult to conduct experiments at the high incident frequency with a velocity selector. Thus a molecular dynamics simulation has been performed to investigate the effects of incident velocity, substrate temperature and frequency of incident on the condensation phenomena in the deposition process of Kr atoms on Ar substrate. Substrate temperature and velocity of incident atom are affect the growth rate of nucleation and reevaporation of deposited atoms. Further those affect the structure of deposited film in the simulation. At high substrate temperature structure of thin film is broken, however at a certain substrate temperature, small incident velocity and low incident frequency, crystals grow with characteristic anisotropy on the substrate.

用Hostettler-Bernstien速度选择器真空沉积法在（001）NaCl、（001）MgO和玻璃衬底上制备了Bi_2Te_3和Bi，Te薄膜，研究了入射原子的平动能对薄膜凝聚过程的控制，薄膜的晶体结构，通过薄膜热电势的测量和透射电镜的观察，对薄膜的热电势进行了研究。薄膜不仅受衬底温度的影响，而且受入射原子速度的影响很大。在一定的基片温度下用速度选择器成膜，可以得到性能良好的热电元件。然而，我们不能明确的入射频率对沉积过程的影响，因为这是很难进行实验，在高入射频率与速度选择器。采用分子动力学模拟方法研究了入射速度、衬底温度和入射频率对Kr原子在Ar衬底上沉积过程中凝聚现象的影响。衬底温度和入射原子速度影响沉积原子的成核和再蒸发生长速率。在模拟过程中，这些因素对沉积膜的结构也有一定的影响。在较高的衬底温度下，薄膜结构被破坏，而在一定的衬底温度、较小的入射速度和较低的入射频率下，晶体在衬底上以特征各向异性生长。