Research on the Semiconductor Based Optical Detector for the Short-Wavelength Visible and Ultra-Violet Region.

短波长可见光和紫外区半导体光学探测器的研究。

• 批准号: 08650015
• 负责人: ANDO Koshi
• 金额: $ 1.15万
• 依托单位: TOTTORI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650015/
• 关键词: wide bandgap semiconductor; ZnSe based Compound semiconductor; MBE growth; blue-ultra-violet detector; photo-voltaic detector; PiN detector; hetero PiN detector; conduction control

We have performed this reserch project with focussing our attentions onto four fundamental key-technologies : (i) precise controling of hetero-interfaces (ZnSe-ZnSe, ZnSeZnMgSSe systems) in MBE growth, (ii) p and n type conduction control, (iii) high quality semi-insulating ZnSe layr (active layr in device), and (iv) perfect ohmic contact layr of ZnTe-Zn-Se super lattice (SLS). Concerning the MBE growth techniques, following high quality film growth conditions are established : (1) High resistive active layr (i-layr) of ZnSe : this active layr plays a role of active layr in PiN structure optical detectors and we have established the high quality i-layr with defect density of less than 10^<13>cm^<-3>. (2) SLS contact layr : almost perfect SLS ohmic contact layr (ZnTe-ZnSe superl-lattice) with the contact resistance of less than 0.1 (ohm cm^2) is realized by adjusting the N-doping conditions in MBE growth.Based on these techniques established here, we have fabricated Heter-Structure PiN optical detectors (SLS-pZnSSe-iZnSe-nZnSe on nGaAs). Tentative performance of the PiN photo-diodes are followings : (a) Quantum Efficiency=50-60% (for light wavelength region of 460-400nm), (b) dark current=0.9-0.1 nA/cm^2 at V=20 V (this value is about one order smaller in magnitudes than the cace of Si PiN diode). As described above, this research has demonstrated a very high potential of the II-VI (ZnSe) based PiN photo-diode by MBE growth for the future short wavelength visible and ultra-violet optical regions.

本课题主要围绕四个关键技术展开：（i）分子束外延生长中异质界面（ZnSe-ZnSe、ZnSeZnMgSSe系统）的精确控制，（ii）p型和n型导电控制，（iii）高质量半绝缘ZnSe层（器件中的有源层），（iv）ZnTe-Zn-Se超晶格（SLS）的理想欧姆接触层。（1）ZnSe的高阻有源层（i-layr）：该有源层在PiN结构光探测器中起有源层的作用，我们已经建立了缺陷密度小于10 μ cm-3的高质量i-layr<13><-3>。(2)SLS接触层：通过调整分子束外延（MBE）生长中的N掺杂条件，获得了接近理想的SLS欧姆接触层（ZnTe-ZnSe超晶格），其接触电阻小于0.1（ohm cm ~ 2），并在此基础上制备了异质结PiN光探测器（SLS-pZnSSe-iZnSe-nZnSe on nGaAs）。PiN光电二极管的初步性能如下：（a）量子效率=50-60%（对于460- 400 nm的光波长区域），（B）暗电流=0.9-0.1 nA/cm ^2（在V=20 V时，该值比Si PiN二极管的暗电流小一个数量级）。如上所述，本研究已经证明了通过MBE生长的基于II-VI（ZnSe）的PiN光电二极管对于未来短波长可见光和紫外光区域的非常高的潜力。

项目成果

Koshi Ando: "Deep Level Characteristics of II-VI and III-V Wide Bandgap Laser Materials" International Symposium on Blue Laser and Light Emitting Diodes Chiba,Japan,March 5-7(1996). L1-L3 (1996)

Koshi Ando：“II-VI 和 III-V 宽带隙激光材料的深层次特性”蓝色激光和发光二极管国际研讨会，日本千叶，3 月 5-7 日（1996 年）。

K.Ando 他: "Deep befect center characteristics of wide-dandgap II-VI and III-V blue laser materials" Proceedings of SPIE (1998,Jan.26-29 ; San Jonse Ca.U.S.A). (印刷中). (1998)

K.Ando 等人：“宽间隙 II-VI 和 III-V 蓝色激光材料的深部缺陷中心特性”SPIE 会议记录（1998 年，1 月 26-29 日；San Jonse Ca.U.S.A）（出版中）。 1998）

K.Ando, T.Yamaguchi, K.Koizumi, T.Abe H.Kasada, A.Ishibashi, K.Nakano and S.Nakamura: "Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials" Proceedings of SPIE Int.Symp.on Optoelectronics. (in press). (1998)

K.Ando、T.Yamaguchi、K.Koizumi、T.Abe H.Kasada、A.Ishibashi、K.Nakano 和 S.Nakamura：“宽带隙 II-VI 和 III-V 蓝色激光材料的深缺陷中心特性

T.Yamaguchi, K.Ando 他: "Shallow-Deep Transition of Nitrogen Acceptor in Blue Semiconductor Laser Material ZnMgSSe" Extended Abstracts,1997 Int.Conf.on Solide State Devices and Materials(SSDM).C-5-8. 202-203 (1997)

T.Yamaguchi、K.Ando 等人：“蓝色半导体激光材料 ZnMgSSe 中氮受体的浅-深转变”扩展摘要，1997 Int.Conf.on Solide State Devices and Materials (SSDM).C-5-8。 202-203（1997）

安東 孝止: "II-VI及びIII-V青色レーザー結晶中の深い欠陥準位" 電子情報通信学会(信学技法)OPE96-131 LQE96-129. 1997-01. 13-18 (1997)

Takashi Ando：“II-VI 和 III-V 蓝色激光晶体中的深层缺陷水平”，电子、信息和通信工程师协会 (IEICE) OPE96-131 LQE96-129。