Study on Degradation Mechanism of II-VI based blue-Green Laser Diodes

II-VI基蓝绿激光二极管的退化机理研究

• 批准号: 10650011
• 负责人: ANDO Koshi
• 金额: $ 2.18万
• 依托单位: TOTTORI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650011/
• 关键词: blue-Green Laser; ZnSe based semiconductors; LD degradation; Microdefect Enhancement; Transient Capacitance Spectroscopy; DLTS; ICTS; Deep defect levels in p-type ZnMgSSe; 素子劣化機構; 欠陥増殖; 電子-正孔再結合促進反応

We have performed this research project with focusing our attention onto microdefect behavior or ZnSe based II-VI compound LEDs or LDs in the real device-operation condition. Microdefects are detected mainly by Deep Level Transient Spectroscopy (DLTS/ICTS) techniques, coupled with I-V(Current-Voltage) and C-V(Capacitance Voltage) characteristics.It is demonstrated that two different microdefects (labeled as HL0 and HL1-centers) are strongly enhanced in the defect densities during laser operation at 300K. Initial densities of these defects, related to nitrogen-complex, are smaller than 10ィイD115ィエD1cmィイD1-3ィエD1, but increase upto 10ィイD116ィエD1cmィイD1-3ィエD1 after 90 hours CW-operation.A driving force of this microdefect-enhancement is found to be due to a REDR effect (e-h Recombination Enhanced Defect Reaction), which can be promoted by high density minority carrier injection in the quantum well active layer or p-type cladding layer(p ZnMgSSe). One possible degradation mechanism of the II-VI based LEDs and LDs is presented using carrier0-removaleffect by the microdefect-enhancement.

我们进行了这项研究项目，把我们的注意力集中在微观缺陷行为或ZnSe基II-VI族化合物LED或LD在真实的设备操作条件。利用深能级瞬态谱（DLTS/ICTS）技术，结合I-V（电流-电压）和C-V（电容-电压）特性，研究了300 K激光工作时两种不同的微缺陷（HL 0和HL 1心）的缺陷密度的增强。这些与氮络合物有关的缺陷的初始密度小于10 μ m D115 μ m D1cm D1-3 μ m D1，但在90小时连续操作后增加到10 μ m D116 μ m D1cm D1-3 μ m D1，发现这种微缺陷增强的驱动力是由于REDR效应这可以通过量子阱有源层或p型包覆层（p ZnMgSSe）中的高密度少数载流子注入来促进。利用微缺陷增强的载流子去除效应，提出了II-VI族LED和LD的一种可能的退化机理。

项目成果

K.Yoshino, K.Ando et al.: "Nontadiative Electron-Hole Recombination in p-and n-type ZnSe Epitaxial Layer Examined by Piezoelectric Photo-Acoustic-Spectroscopy"Proceedings of the 9th Int. Conf. on II-VI Compounds, Kyoto Japan 1999, Nov. 1-5. (to be publish

K.Yoshino、K.Ando 等人：“通过压电光声光谱检查 p 型和 n 型 ZnSe 外延层中的非放射性电子空穴复合”第九届国际会议论文集。

H.C. Lee, K. Ando, et al.: "Efficient Blue-Green Light Emitting Diodes of ZnSSe ; Te/ZnMgSSe DH Grown by Molecular-Beam-Epitaxy"Proceedings of the 9th Int. Conf. on II-VI Compounds, Kyoto, Japan 1999, Nov. 1-5. 125-125 (1999)

H.C.

K.Ando, T.Yamaguchi et al.: "Defect Center Characteristics of Wide-bandgap II-VI and III-V Blue-laser Materials"Proceedings of the SPIE Conf. on Physics and Simulation of Optoelectronic Deviceses, Sa Jonose, Ca, USA. 60-68 (1998)

K.Ando、T.Yamaguchi 等人：“宽带隙 II-VI 和 III-V 蓝色激光材料的缺陷中心特性”SPIE 会议论文集。

H.C.Lee, K.Ando et al.: "Efficient Blue-Green Light Emitting Diodes of ZnSSe ; Te/ZnMgSSe DH Structure Grown by Molecular-Beam-Epitaxy"Proceedings of the 9th Int. Conf. on II-VI Compounds, Kyoto Japan 1999, Nov. 1-5. (to be published in J. Crystal Growth

H.C.Lee、K.Ando 等人：“ZnSSe 的高效蓝绿光发光二极管；通过分子束外延生长的 Te/ZnMgSSe DH 结构”第九届国际会议论文集。

K.Ando, T.Yamaguchi,et al.: "Deepdetect center characteristics of wide-band gap II-VI and III-V blue laser materials" Proceedings of the SPIE Conf.on physics and Simulation of Optoelectronic Device,San Jose,CA,Jan.1998. 3283. 60-68 (1998)

K.Ando、T.Yamaguchi 等人：“深度检测宽带隙 II-VI 和 III-V 蓝色激光材料的中心特性”SPIE Con​​f.on 物理与光电器件模拟会议论文集，加利福尼亚州圣何塞