Study on Degradation Mechanism of II-VI based blue-Green Laser Diodes

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We have performed this research project with focusing our attention onto microdefect behavior or ZnSe based II-VI compound LEDs or LDs in the real device-operation condition. Microdefects are detected mainly by Deep Level Transient Spectroscopy (DLTS/ICTS) techniques, coupled with I-V(Current-Voltage) and C-V(Capacitance Voltage) characteristics.It is demonstrated that two different microdefects (labeled as HL0 and HL1-centers) are strongly enhanced in the defect densities during laser operation at 300K. Initial densities of these defects, related to nitrogen-complex, are smaller than 10ィイD115ィエD1cmィイD1-3ィエD1, but increase upto 10ィイD116ィエD1cmィイD1-3ィエD1 after 90 hours CW-operation.A driving force of this microdefect-enhancement is found to be due to a REDR effect (e-h Recombination Enhanced Defect Reaction), which can be promoted by high density minority carrier injection in the quantum well active layer or p-type cladding layer(p ZnMgSSe). One possible degradation mechanism of the II-VI based LEDs and LDs is presented using carrier0-removaleffect by the microdefect-enhancement.