Development of Cryogenic Electronics for High Sensitivity Sensors

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In order to achieve high sensitivity and high-energy resolution for infrared astronomical satellites as well as X-ray astronomical satellites, cryogenic cooling technique of sensors at 2 Kelvin or below is often employed. For these applications, it is highly required to install preamplifiers, multiplexers, and even A/D converters in the low temperature part so as to realize the maximum performance of large-scale astronomical satellites. However, standard electronics devices can operate only above -50 degrees C, and no devices operable at 2 Kelvin has been developed. The purpose of this research is to develop cryogenic preamplifiers, multiplexers, and A/D converters by using MOSFETs. As the result of this research, we have invented a new MOSFET structure that is operable at 2 Kelvin. This is the first result by using commercial silicon wafers. Next, we have made an operational amplifier at 2 Kelvin, as well as 60-channel preamplifier array for far-infrared array sensors. The final product of this research is used for the far-infrared array sensors of the first infrared astronomical satellite of Japan.