室温動作赤外半導体レーザの長波長化に関する研究

进行了II型超晶格红外激光器室温发射波长长波长的基础研究。采用水冷型分子束外延生长方法制备了超晶格。通过对器件设计的基础研究，将（AlGa） （AsSb）作为包层进行生长。用Te和Be实验确定了n和p型熔覆层的掺杂条件和与GaSb欧姆接触的高密度掺杂条件。其次，对InAs/InGaSb/InAs超晶格活性层的设计、生长、评价进行了研究。在超晶格设计中，利用（InGa）Sb量子阱与InAs量子阱之间的压缩应变，通过求解价带中的轻空穴带和重空穴带的简并，设计了降低正空穴态密度的结构，以降低阈值电流密度。设计了在包层和超晶格活性层之间插入（AlGa） （AsSb）的结构。基于对这些生长条件的考察和计算机模拟，对InAs/InGaSb/InAs超晶格活性层和由（AlGa）（AsSb）应变补偿层组成的超晶格生长进行了评价。通过光致发光评价，实现了3.1 μm波长的光发射，为延长半导体激光器室温发射波长的器件制造奠定了基础。

The basic research for long wavelength of room temperature emission wavelength of Type II superlattice infrared laser was carried out. Water cooling type molecular beam epitaxitial growthmethod was used in the manufacture of the superlattice. By the basic study on device design, the growth of (AlGa) (AsSb) was done as cladding layer. Doping conditions of cladding layer of the n and p type and high-dense doping conditions for ohmic contact to GaSb were decided experimentally using Te and Be.Next, the research on design and growth, evaluation of the InAs/InGaSb/InAs superlattice active layer was carried out. The structure which reduced state density of positive hole by solving the degeneracy of light hole band in valence band and heavy positive hole band using compressive strain between (InGa)Sb quantum well and InAs quantum well, was designed by the computer simulation in the design of the superlattice, in order to reduce threshold current density. The structure which inserted (AlGa) (AsSb) between cladding layer and superlattice active layer was designed.Based on examination and computer simulation of these growth condition, the following were carried out : InAs/InGaSb/InAs superlattice active layer and growth of the superlattice composed of the (AlGa)(AsSb) strain compensated layer and evaluation. By the evaluation of the photo luminescence, the light emission of 3.1 μm wavelength was realized, and the result of becoming a base of the device manufacture for lengthening room temperature emission wavelength of the semiconductor laser was obtained.