权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

室温動作赤外半導体レーザの長波長化に関する研究

常温红外半导体激光器长波长化研究

基本信息

批准号：
10450141
负责人：
SUSAKI Wataru
金额：
$ 9.09万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450141/
关键词：
infrared semiconductor laser MBE with a water cooling System superlattice Type II GaSb InAs InGaSb doping TypeII GaSb based infrared laser AlGaAsSb InGaAsSb quantum well (InAs InGaSb)AlGaSb superlattice Type I band struc

项目摘要

The basic research for long wavelength of room temperature emission wavelength of Type II superlattice infrared laser was carried out. Water cooling type molecular beam epitaxitial growthmethod was used in the manufacture of the superlattice. By the basic study on device design, the growth of (AlGa) (AsSb) was done as cladding layer. Doping conditions of cladding layer of the n and p type and high-dense doping conditions for ohmic contact to GaSb were decided experimentally using Te and Be.Next, the research on design and growth, evaluation of the InAs/InGaSb/InAs superlattice active layer was carried out. The structure which reduced state density of positive hole by solving the degeneracy of light hole band in valence band and heavy positive hole band using compressive strain between (InGa)Sb quantum well and InAs quantum well, was designed by the computer simulation in the design of the superlattice, in order to reduce threshold current density. The structure which inserted (AlGa) (AsSb) between cladding layer and superlattice active layer was designed.Based on examination and computer simulation of these growth condition, the following were carried out : InAs/InGaSb/InAs superlattice active layer and growth of the superlattice composed of the (AlGa)(AsSb) strain compensated layer and evaluation. By the evaluation of the photo luminescence, the light emission of 3.1 μm wavelength was realized, and the result of becoming a base of the device manufacture for lengthening room temperature emission wavelength of the semiconductor laser was obtained.

开展了Ⅱ型超晶格红外激光器室温发射波长长波长的基础研究。超晶格的制备采用水冷式分子束外延生长方法。通过对器件设计的基础研究，选择生长（AlGa）（AsSb）作为包覆层。实验确定了n型和p型包层的掺杂条件以及与GaSb欧姆接触的高浓度掺杂条件。接下来，进行了InAs/InGaSb/InAs超晶格有源层的设计、生长和评价研究。在超晶格的设计中，通过计算机模拟，设计了利用（InGa）Sb量子阱和InAs量子阱之间的压应变来解决价带轻空穴带和重空穴带的简并，从而降低空穴态密度的结构，以降低阈值电流密度。设计了在包层和超晶格有源层之间插入（AlGa）（AsSb）的结构，在对这些生长条件进行考察和计算机模拟的基础上，进行了InAs/InGaSb/InAs超晶格有源层和（AlGa）（AsSb）应变补偿层组成的超晶格的生长和评价。通过光致发光的评价，实现了3.1 μm波长的发光，获得了成为延长半导体激光器的室温发光波长的器件制造基础的结果。