Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro Lasers

常规表面发射激光器通常是由网格蚀刻到降低阈值电流的，而电极形成在光发射表面的一部分。这些差异可以集成电子元件，如FETs，也可以减少激光器的区域，但不可能用于高密度集成OEIC和2个尺寸激光阵列单片芯片。在研究中，一个基于TJS平面激光形成半绝缘基底的新颖结构被提议用于发射平面微表面的激光制造在超晶格中的渗透性紊乱。获得的主要结果都是按以下方式进行的。（1）一种用于行星微表面发射激光器的新型结构：激光器结构具有横向结构n和p层，其中插入了GaAs/InGaAs/GaAs约束的量子井层和AlAs/GaAs DBR多反射器层之间的TJS激光器结构。载体注入是量子井中的统一，因为它导致了木星的热度达到了高潮。 ... More 通过在传统结构中发现的AlGaAs/GaAs多个反射器的异构屏障来确定耐药性。（2）用MBE水冷却方法制造激光器的层结构：激光器的层结构是用24个AlAs/GaAs四分之一波浪长度DBRs制成的，其中激光器的层结构是用计算机控制的MBE系统与水冷却制成的（在常规中不使用液体氮冷却作为液体氮冷却）。一个高效率0.98毫米的光光度，用于8 nm厚的In_<0.2>Ga_<0.8>As可以在房间温度上观察到与MOCVD增长的那些相比。（3） Diffusion of Si and Zn under As pressure ： Zn and Si are chosen as the impurities for disordering of the superlattices。用于扩散的薄膜被沉积在含有SiO_2的锌或纯硅的电子束上。沉积后，晶圆片在锌的600 C和硅的850 C被淘汰。它发现硅扩散在蒸发的石英管中具有增强的压力，而扩散深度在850 ℃时为4毫米，可持续20小时。（4） Doping of conducting p and n GaAs layrs ： n type conducting layrs by Si dopant and p type consuction layrs by Be doping are grown by the MBE，and the electron mobility exceed 2000 cm^2/V·s for typical donor conncenntration of 7 x10 <17>^ cm^\-3&gt; with the background other impurities less than 1 x10 ^<17>cm^\-3&gt;。Hole mobilities of Be-doping wafers are almost coincident with those of p-doping level between 10^<18>and 5 x10 ^<18>cm^\-3\。这些结果显示，包装袋将用于激光器与10^<18>cm^&lt;-3&gt;或更多的载体注射水平。（5）超晶格紊乱：具有（24 AlAs/GaAs DBR） / （p-GaAs导电层） / （GaAs/InGaAs/GaAs约束双量子井） / （n导电GaAs层） / （5- 10AlAs/GaAs DBR）的晶圆片，由于微激光结构是由带有计算机受控系统的MBE生长的。硅总线在850 C的压力下被加压为20小时在一个蒸发的石英管中，跟随Zn扩散在600 C的压力下使用SiN薄膜用于扩散面具。硅和锌的干扰都被SEM观察到，它被认为是为了制造具有低阈值的平面微表面发射激光器而被应用的。Less（低）

Conventional surface emitting laser is usually fabricated by mesa etching to reduce threshold current, and the electrode is formed on the part of the light emitting surface. These difficulties to integrate electrical elemental devices such as FETs and also reduce the area of the laser, which is not desirable for high density integration OEIC and 2 dimensional laser array monolithic chips.In the study, a novel structure based on TJS planar laser formed on semi-insulating substrate are proposed for the planar micro surface emitting laser fabricated by impurity disordering in superlattices. The main results obtained are as follows.(1) A novel structure for a planar micro surface emitting laser : The laser structure has lateral conducting n and p layrs, which is inserted between GaAs/InGaAs/GaAs strained quantum well layrs and AlAs/GaAs DBR multiple reflector layrs in the TJS laser structure. Carrier injection is uniform in the quantum wells which overcomes the Joule heating due to high se … More ries resistance through hetero barriers of AlGaAs/GaAs multiple reflectors as found in conventional structures.(2) Fabrication of the layr structure of the laser by MBE with water cooling method : The layr structure of the laser is strained single quantum well GaAs/InGaAs/GaAs sandwiched with 24 AlAs/GaAs quarter wavelength DBRs, which are formed by computer controlled MBE system with water cooling (not using liquid nitrogen cooling as in conventional one). A high efficient 0.98 mum photoluminescence for 8nm thick In_<0.2>Ga_<0.8>As is observed at room temperatire comparable with those of MOCVD growth.(3) Diffusion of Si and Zn under As pressure : Zn and Si are chosen as the impurities for disordering of the superlattices. The films for diffusion are deposited on wafers by electron beam from SiO_2 contained Zn or pure Si. After deposition, the wafers are annealed at 600 C for Zn and 850 C for Si diffusion. It is found that Si diffusion is enhanced under As pressure in an evacuated quartz tube, and the diffusion depth is 4mum for 20 hr at 850C.(4) Doping of conducting p and n GaAs layrs : n type conducting layrs by Si dopant and p type consuction layrs by Be doping are grown by the MBE,and the electron mobility exceed 2000 cm^2/V・s for typical donor conncenntration of 7x10^<17> cm^<-3> with the background other impurities less than 1x10^<17> cm^<-3>. Hole mobilities of Be-doping wafers are almost coincident with those of p-doping level between 10^<18> and 5x10^<18> cm^<-3>. These results show that the wafers will be used for lasers with carrier injection level of 10^<18> cm^<-3> or more.(5) Disordering of superlattices : Wafers with (24 AlAs/GaAs DBR) / (p-GaAs conducting layr) / (GaAs/InGaAs/GaAs strained double quantum wells) / (n conducting GaAs layr) / (5-10 AlAs/GaAs DBR), for micro laser structure are grown by the MBE with a computer controlled system successfully. Si bas been diffused under As pressure at 850C for 20 hr in an evaquated quartz tube, which followed by Zn diffusion at 600C for 4 hr using SiN films for diffusion masks. Both Si and Zn disordering have been observed by SEM,which are conirmed to be applied for fabrication of planar micro surface emitting laser with low threshold. Less