Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro Lasers

InGaAs/AlGa/GaAs多层中杂质扩散无序及其在垂直腔面发射微型激光器中的应用

• 批准号: 08455168
• 负责人: SUSAKI Wataru
• 金额: $ 4.35万
• 依托单位: Osaka Electro-Communication University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455168/
• 关键词: micro laser; heterostructure; strained quantum well; InGaAs; surface emitting; disorder; diffusion; multiple reflecting film

Conventional surface emitting laser is usually fabricated by mesa etching to reduce threshold current, and the electrode is formed on the part of the light emitting surface. These difficulties to integrate electrical elemental devices such as FETs and also reduce the area of the laser, which is not desirable for high density integration OEIC and 2 dimensional laser array monolithic chips.In the study, a novel structure based on TJS planar laser formed on semi-insulating substrate are proposed for the planar micro surface emitting laser fabricated by impurity disordering in superlattices. The main results obtained are as follows.(1) A novel structure for a planar micro surface emitting laser : The laser structure has lateral conducting n and p layrs, which is inserted between GaAs/InGaAs/GaAs strained quantum well layrs and AlAs/GaAs DBR multiple reflector layrs in the TJS laser structure. Carrier injection is uniform in the quantum wells which overcomes the Joule heating due to high se … More ries resistance through hetero barriers of AlGaAs/GaAs multiple reflectors as found in conventional structures.(2) Fabrication of the layr structure of the laser by MBE with water cooling method : The layr structure of the laser is strained single quantum well GaAs/InGaAs/GaAs sandwiched with 24 AlAs/GaAs quarter wavelength DBRs, which are formed by computer controlled MBE system with water cooling (not using liquid nitrogen cooling as in conventional one). A high efficient 0.98 mum photoluminescence for 8nm thick In_<0.2>Ga_<0.8>As is observed at room temperatire comparable with those of MOCVD growth.(3) Diffusion of Si and Zn under As pressure : Zn and Si are chosen as the impurities for disordering of the superlattices. The films for diffusion are deposited on wafers by electron beam from SiO_2 contained Zn or pure Si. After deposition, the wafers are annealed at 600 C for Zn and 850 C for Si diffusion. It is found that Si diffusion is enhanced under As pressure in an evacuated quartz tube, and the diffusion depth is 4mum for 20 hr at 850C.(4) Doping of conducting p and n GaAs layrs : n type conducting layrs by Si dopant and p type consuction layrs by Be doping are grown by the MBE,and the electron mobility exceed 2000 cm^2/V・s for typical donor conncenntration of 7x10^<17> cm^<-3> with the background other impurities less than 1x10^<17> cm^<-3>. Hole mobilities of Be-doping wafers are almost coincident with those of p-doping level between 10^<18> and 5x10^<18> cm^<-3>. These results show that the wafers will be used for lasers with carrier injection level of 10^<18> cm^<-3> or more.(5) Disordering of superlattices : Wafers with (24 AlAs/GaAs DBR) / (p-GaAs conducting layr) / (GaAs/InGaAs/GaAs strained double quantum wells) / (n conducting GaAs layr) / (5-10 AlAs/GaAs DBR), for micro laser structure are grown by the MBE with a computer controlled system successfully. Si bas been diffused under As pressure at 850C for 20 hr in an evaquated quartz tube, which followed by Zn diffusion at 600C for 4 hr using SiN films for diffusion masks. Both Si and Zn disordering have been observed by SEM,which are conirmed to be applied for fabrication of planar micro surface emitting laser with low threshold. Less

传统的表面发射激光器通常是通过台面刻蚀来降低阈值电流，电极形成在发光表面的一部分。本文针对超晶格中杂质无序平面微表面发射激光器，提出了一种基于TJS平面激光器的半绝缘衬底平面微表面发射激光器结构。主要研究结果如下：(1)一种新型的平面微表面发射激光器结构：在TJS激光器结构中，横向导电层为n层和p层，分别位于GaAsInGaAsGaAsDBR应变层和AlAs/GaAsDBR多反射层之间。载流子注入均匀，克服了高Se…引起的焦耳发热(2)水冷法分子束外延制作激光器的层结构：激光器的层结构是应变的单量子阱结构，中间夹有24个AlAs/GaAs四分之一波长DBR，由计算机控制的水冷MBE系统(不像传统的水冷液氮冷却)形成。在与MOCVD生长相当的室温下，观察到了厚度为8 nm的高效率的0.98um光致发光。(3)As压力下Si和Zn的扩散：Zn和Si被选为超晶格无序的杂质。用于扩散的薄膜是用电子束从含锌的SiO_2或纯Si中沉积在晶片上的。沉积后，对晶片进行600℃的锌退火和850℃的硅扩散退火。(4)掺杂p和n型GaAs层：用分子束外延生长了Si掺杂的n型导电层和掺Be的p型导电层，电子迁移率超过2000 cm^2/V·S，典型施主浓度为7×10^&lt；17&gt；-3&gt；本底杂质小于1×10^&lt；17&gt；cm^&lt；-3&gt；Be掺杂晶片的空穴迁移率与p掺杂浓度在10^&lt；18&lt；-3&gt；之间的空穴迁移率基本一致。(5)超晶格的无序化：利用分子束外延技术，在计算机控制系统上成功地生长出具有(24AlAs/GaAsDBR)/(p-GaAs导电层)/(GaAs/InGaAs/GaAs应变双量子阱)/(n导电GaAs层)/(5-10AlAs/GaAsDBR)的微激光结构的晶片。Si在850℃的As压力下扩散20小时，然后用SiN膜作为扩散掩膜，在600℃下扩散4小时。扫描电子显微镜观察到了硅和锌的无序化现象，为制作低阈值平面微表面发射激光器奠定了基础。较少

项目成果

須〓 渉: "1.3μmおよび1.5μm-InGaAsPレーザダイオードの再結合係数の測定" 電子情報通信学会論文誌C-1. J80-C-1. 313-318 (1997)

Wataru Su：“1.3μm 和 1.5μm-InGaAsP 激光二极管的复合系数的测量”IEICE Transactions C-1 (1997)。

須さき 渉: "1.3および1.5μm-ImGaAsPレーザダイオードの再結合係数の測定" 電子情報通信学会論文紙C-1. J80-C-1. 313-318 (1997)

Wataru Susaki：“1.3 和 1.5 μm-ImGaAsP 激光二极管的复合系数的测量”IEICE 论文 J80-C-1 (1997)。

松浦秀治: "多数キャリヤ密度の温度依存性を用いた半導体中の不純物評価法" 電子情報通信学会論文誌C-II. J80・No.3. (1997)

Hideharu Matsuura：“利用多数载流子密度的温度依赖性评估半导体中的杂质的方法”电子信息通信工程师学会学报 C-II J80·No.3（1997 年）。

Hideharu MATSUURA: "Evaluating densities and energy levels of impurities with close energy levels in semiconductor from temperature dependence of majority-carrier concentration" Jpn. J. Appl. Phys.35. 5680-5681 (1996)

Hideharu Matsuura：“根据多数载流子浓度的温度依赖性来评估半导体中具有接近能级的杂质的密度和能级”Jpn。

Hideharu MATSUURA: "A Simple Graphical Method for Determing Densities and Energy Levels of Donors and Acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration" Jpn.J.Appl.Phys.36. 341-3547 (1997)

Hideharu Matsuura：“根据多数载流子浓度的温度依赖性确定半导体中施主和受主的密度和能级的简单图形方法”Jpn.J.Appl.Phys.36。