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Infrared Semiconductor Laser by Subband Transition at 3μmwavelength Band

3μm波段的子带跃迁红外半导体激光器

基本信息

批准号：
15360196
负责人：
SUSAKI Wataru
金额：
$ 9.6万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360196/
关键词：
Super lattice laser Miniband Transition AlInAs InGaAs super lattice AlGaAsSb barrier layer MBE InP substrate Cascade laser Infrared ミニバンド間遷移

项目摘要

Lasing wavelength in semiconductor lasers between 2.5 and 4μm at room temperature has not been achieved yet so far. We have proposed a novel structure of a quantum cascade laser (QCL) to get the wavelengths. The structure is based on the AlInAs/GaInAs superlattice lattice matched to the InP substrate. Some of the AlInAs layers in the active quantum well layers are replaced by AlAsb and AlAs layers, with the conduction band offsets to the GaInAs well are 1.60 and 1.06eV, respectively, which is substantially larger than that of AlInAs, 0.52eV. These higher barriers prevent the electron overflow in the active quantum wells and enable it to attain the shorter lasing wavelength. We have also proposed a injectorless QCL to reduce the number of quantum well layers and improve the quantum efficiency for the 3μm wavelength band.Layer structures are designed by a numerical computer simulation developed for the structure. For example, two AlAsSb barriers and one AlAs barrier in the 4 quantum wells for the active layers is designed and have been indicated to be able to get the lasing wavelength less than 3μm. A injectorless structure at 3.2μm aimed for detection of CH_4 has also been designed.The growth conditions of AlInAs, GaInAs, AlAsSb lattice-matched to InP at same substrate temperature are investigated by adjusting the metal source flux from cells by precisely controlled cell heater temperature. The cell for Sb is a cracking type to get Sb_2 in spite of Sb_4, to improve the crystal quality. The lattice match condition has been measured by XRD. It is confirmed by the photoluminescence that the AlAsSb layer crystal quality has been remarkably improved with Sb_2 source.Layer structure of the conventional AlInAs/GaInAs cascade structure at 5.4μm and AlAsSb/GaInAs cascade structure at 3.2μm grown by MBE, and confirmed the thickness of each layer is precisely controlled within a monolayer by TEM observation.

在室温下，半导体激光器的激射波长在2.5 ~ 4μm之间，迄今为止还没有实现。我们提出了一种新的量子级联激光器（QCL）的结构，以获得波长。该结构基于与InP衬底匹配的AlInAs/GaInAs超晶格晶格。有源量子阱层中的一些AlInAs层被AlAsb和AlAs层取代，其导带偏移到GaInAs阱的分别为1.60和1.06eV，其显著大于AlInAs的0.52eV。这些较高的势垒阻止了有源量子威尔斯中的电子溢出，使其能够获得较短的激射波长。为了减少量子阱层数，提高3μm波段的量子效率，我们还提出了一种无注入QCL，并对该结构进行了数值模拟。例如，在有源层的4个量子威尔斯阱中设计了两个AlAsSb势垒和一个AlAs势垒，并已表明能够获得小于3μm的激射波长。设计了一种3.2μm波长的无注入结构，通过精确控制电池加热器温度，调节电池的金属源流量，研究了在相同衬底温度下AlInAs、GaInAs、AlAsSb等与InP晶格匹配的材料的生长条件。锑池为裂解式，除Sb_4外，还可得到Sb_2，提高晶体质量。用XRD测试了样品的晶格匹配情况。通过光致发光测试证实，采用Sb_2源可以显著提高AlAsSb层的晶体质量，通过MBE生长了5.4μm的常规AlInAs/GaInAs级联结构和3.2μm的AlAsSb/GaInAs级联结构的层结构，并通过TEM观察证实了各层的厚度精确控制在单层内。