PREPARATION OF HIGHLY SENSITIVE AND STABLE GAS SENSING FILM BY USING HYDROTHERMALLY TREATED SEMICONDUCTING OXIDE COLLOIDAL PARTICLE
PREPARATION OF HIGHLY SENSITIVE AND STABLE GAS SENSING FILM BY USING HYDROTHERMALLY TREATED SEMICONDUCTING OXIDE COLLOIDAL PARTICLE
批准号:
10450324
负责人:
YAMAZOE Noboru
金额:
$9.02万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
薄膜半导体气体传感器已成为一个密集的研究目标,使其能够独立地推进其敏感性高、制造成本低和微传感器的适用性。哦,还有很多尝试来制造薄膜传感器,但没有一个是商业上可用的。它似乎是一个瘦电影设备的关键重要性,如何使瘦电影成为一个制造统一的,并在传感器操作期间保持稳定。This study aims at establishing or evaluating hydrothermal treatment condition for SnOイイD22エD2 sol solutions, thermal growth behavior of SnOイD22エD2 grains (crystallites) at elevated temper\and gas sensing properties of the resulting this film device. 1。SnO D22 sol by a hydrothermal treatment and grain growth behavior of hydrothermally treated SnO D22 D2A Hydrothermal treatment of-stannic acid gel in ammonia water gives to a solution dispersing nanoparticle of SnO D22 with a narrow particle ... More ze distribution (5 - 7nm)。In addition, the SnOイイD22エD2 powder derived from the sol solution is very resistant to grain growth at evaluated temperature。这一指标表明,水晶石的热增长被低估了与水热治疗相矛盾。该抑制被认为是以减少SnO-D22-D2含量的溶液,几乎饱和于1.8重量%的溶液含量。正如所看到的,在此内容中,水晶石尺寸在900 ° C 2的计算后可能小于13纳米。Gas sensing properties of thin film devices prepared from hydrothermally treated sol solutionsThis film SnO D22 sensors were prepared from the hydrothermally treated sol solutions by a spin-coating method。此电影设备提供了较高的敏感性和快速响应瞬态与传统的交错块类型匹配。这些影响是预期的,可以从气体传感层的厚度中减少,而颗粒大小较小。它被发现是由于电影紧张度的增加而减少了H-D22的敏感性。“CO敏感性,在另一只手上,已经找到了几乎独立于电影的厚度。”It seems that the observed difference in the thickness dependence reflManagement the difference in gas diffusion properties between H-D22-D2 and CO through the Oracle pores of the film。Less(低)
英文摘要
Thin film semiconductor gas sensors have been an intensive research target owing to their indispensable advantages such as high sensitivity, low fabrication cost and applicability for microsensors. Although there have been many attempts to fabricate thin-film sensors, none of them have been commercially available yet. It seems to be of key importance for a thin film device how the thin film can be fabricated uniform and kept stable during sensor operation. This study aims at establishing or evaluating hydrothermal treatment condition for SnOィイD22ィエD2 sol solutions, thermal growth behavior of SnOィイD22ィエD2 grains (crystallites) at elevated temperatures and gas sensing properties of the resulting this film device.1. Preparation of SnOィイD22ィエD2 sol by a hydrothermal treatment and grain growth behavior of hydrothermally treated SnOィイD22ィエD2A Hydrothermal treatment of α-stannic acid gel in ammonia water gives to a sol solution dispersing nanoparticle of SnOィイD22ィエD2 with a narrow particle si … More ze distribution (5 -7 nm). In addition, the SnOィイD22ィエD2 powder derived from the sol solution is very resistant to grain growth at evaluated temperature. This indicates that the thermal growth of crystallites is suppressed remarkably with the hydrothermal treatment. The suppression was more pronounced with decreasing SnOィイD22ィエD2 content of the sol solution, almost saturating at 1.8wt% sol content. It is seen that, at this content, crystallite size can be small as 13 nm after calcination at 900℃2. Gas sensing properties of thin film devices prepared from hydrothermally treated sol solutionsThis film SnOィイD22ィエD2 sensors were prepared from the hydrothermally treated sol solutions by a spin-coating method. This film devices proved higher sensitivity and quicker response transients compared with the conventional sintered-block type ones. These effects are expected to arise from a reduction in gas sensing layer thickness as well as smaller grain size. It was found that the HィイD22ィエD2 sensitivity decreased with an increase in film thickness. The CO sensitivity, on the other hand, was found to be almost independent on the film thickness. It seems that the observed difference in the thickness dependence reflects the difference in gas diffusion properties between HィイD22ィエD2 and CO through the micro pores of the film. Less
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Nam Seok Baik: "Hydrothermal treated sol solution of tin oxide for thin-film gas sensor"Sensors and Actuators B. (in press).
Nam Seok Baik:“用于薄膜气体传感器的氧化锡水热处理溶胶溶液”传感器和执行器 B.(正在印刷中)。
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Wan-Young Chung: "Gas sensing properties of idium oxide thin film on silicon substrate prepared by spin-coating method"Japanese Journal of Applied Physics. 37. 4994-4998 (1998)
Wan-Young Chung:“旋涂法制备的硅衬底上氧化铱薄膜的气敏特性”日本应用物理学杂志。
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Nam Seok Bail: "Gas Sensing Properties of tin oxide thin-films form hydrothermally treated sol solution"Technical Diagest of 7th International Meeting on Chemical Sensors. 362-364 (1998)
Nam Seok Bail:“水热处理溶胶溶液中氧化锡薄膜的气敏特性”第七届国际化学传感器会议技术摘要。
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W.-Y.Chung: "Gas Sensing Properties of Indium Oxide Thin Film on Alumina and Silicon Substrates" Technical Digest of 7-IMCS. 410-412 (1998)
W.-Y.Chung:“氧化铝和硅基板上氧化铟薄膜的气敏特性”7-IMCS 技术文摘。
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共 18 条
Design for ultra sensitive oxide semiconductor gas sensor by controlling meso-pore and high order structure
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批准号:13450354
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.54万
-
财政年份:2001
-
负责人:YAMAZOE Noboru
-
依托单位:
DEVELOPMENT OF GAS SENSORS AND DECOMPOSITION CATALYST SYSTEM FOR NITROUS OXIDE USED IN OPERATING ROOMS
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批准号:11559015
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$8.7万
-
财政年份:1999
-
负责人:YAMAZOE Noboru
-
依托单位:
Development of NOx and CO_2 gas sensor for on-site real-time monitoring
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批准号:07555576
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$4.29万
-
财政年份:1995
-
负责人:YAMAZOE Noboru
-
依托单位:
Design of High-Performance Environmental Gas Sensors Using Solid Electrolytes and Multi-Component Auxiliary Electrodes
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批准号:03453090
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.67万
-
财政年份:1991
-
负责人:YAMAZOE Noboru
-
依托单位:
Basic Research for Development of Ceramic Odor Sensors
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批准号:01470082
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.48万
-
财政年份:1989
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负责人:YAMAZOE Noboru
-
依托单位:
Development of Oxygen Semipermeable Membrane Using Mixed Conductive Perovskite-Type Oxide
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批准号:62850145
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项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$4.67万
-
财政年份:1987
-
负责人:YAMAZOE Noboru
-
依托单位:
Development of Solid Electrolyte Sensors Operative at Ordinary Temperature
-
批准号:60850151
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$5.7万
-
财政年份:1985
-
负责人:YAMAZOE Noboru
-
依托单位:
海外基金