权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

PREPARATION OF HIGHLY SENSITIVE AND STABLE GAS SENSING FILM BY USING HYDROTHERMALLY TREATED SEMICONDUCTING OXIDE COLLOIDAL PARTICLE

水热处理半导体氧化物胶体颗粒制备高灵敏稳定气敏膜

基本信息

批准号：
10450324
负责人：
YAMAZOE Noboru
金额：
$ 9.02万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450324/
关键词：
Hydrothermal treatment Semiconducting oxide Tin-oxide sol Thin film sensor High sensitivity Stability Small particle Grain size 酸化スズコロイド粒子結晶子径

项目摘要

Thin film semiconductor gas sensors have been an intensive research target owing to their indispensable advantages such as high sensitivity, low fabrication cost and applicability for microsensors. Although there have been many attempts to fabricate thin-film sensors, none of them have been commercially available yet. It seems to be of key importance for a thin film device how the thin film can be fabricated uniform and kept stable during sensor operation. This study aims at establishing or evaluating hydrothermal treatment condition for SnOィイD22ィエD2 sol solutions, thermal growth behavior of SnOィイD22ィエD2 grains (crystallites) at elevated temperatures and gas sensing properties of the resulting this film device.1. Preparation of SnOィイD22ィエD2 sol by a hydrothermal treatment and grain growth behavior of hydrothermally treated SnOィイD22ィエD2A Hydrothermal treatment of α-stannic acid gel in ammonia water gives to a sol solution dispersing nanoparticle of SnOィイD22ィエD2 with a narrow particle si … More ze distribution (5 -7 nm). In addition, the SnOィイD22ィエD2 powder derived from the sol solution is very resistant to grain growth at evaluated temperature. This indicates that the thermal growth of crystallites is suppressed remarkably with the hydrothermal treatment. The suppression was more pronounced with decreasing SnOィイD22ィエD2 content of the sol solution, almost saturating at 1.8wt% sol content. It is seen that, at this content, crystallite size can be small as 13 nm after calcination at 900℃2. Gas sensing properties of thin film devices prepared from hydrothermally treated sol solutionsThis film SnOィイD22ィエD2 sensors were prepared from the hydrothermally treated sol solutions by a spin-coating method. This film devices proved higher sensitivity and quicker response transients compared with the conventional sintered-block type ones. These effects are expected to arise from a reduction in gas sensing layer thickness as well as smaller grain size. It was found that the HィイD22ィエD2 sensitivity decreased with an increase in film thickness. The CO sensitivity, on the other hand, was found to be almost independent on the film thickness. It seems that the observed difference in the thickness dependence reflects the difference in gas diffusion properties between HィイD22ィエD2 and CO through the micro pores of the film. Less

薄膜半导体气体传感器由于具有灵敏度高、制作成本低、适用于微型化等优点而成为研究的热点。虽然已经有许多尝试来制造薄膜传感器，但它们中没有一个已经商业化。如何使薄膜在传感器工作过程中保持均匀和稳定，对薄膜器件来说是至关重要的。本研究旨在建立或评估SnO_xD 22_xD 2溶胶溶液的水热处理条件、SnO_xD 22_xD 2晶粒（微晶）在高温下的热生长行为以及所得薄膜器件的气敏性能。水热法制备SnO_（22）SnO_（22）SnO_（22）D_2溶胶及其晶粒生长行为研究α-锡酸凝胶在氨水中的水热处理得到了分散有SnO_（22）SnO_（22）D_2纳米粒子的溶胶溶液，其粒径较窄， ...更多信息 Z e分布（5 - 7 nm）。此外，从溶胶溶液中得到的SnO纳米D22纳米D2粉末在评估温度下对晶粒生长具有很强的抵抗力。这表明水热处理显著抑制了微晶的热生长。随着溶胶溶液中SnO_xD_22_xD_2含量的降低，抑制作用更加明显，在1.8wt%溶胶含量时几乎饱和。可以看出，在此含量下，在900℃煅烧后，微晶尺寸可以小至13 nm 2。水热处理溶胶溶液制备的薄膜器件的气敏特性用旋涂法从水热处理的溶胶溶液制备了薄膜SnO_xD_22_xD_2传感器。与传统的烧结块型器件相比，这种薄膜器件具有更高的灵敏度和更快的瞬态响应。预计这些效应是由于气敏层厚度的减小以及更小的晶粒尺寸引起的。结果发现，随着膜厚度的增加，H_（60）D_（22）H_（60）D_（22）灵敏度降低。CO的灵敏度，另一方面，被发现是几乎独立的膜厚度。所观察到的厚度依赖性的差异似乎反映了通过膜的微孔的H ↓ [2] D22 ↓ [3] D2和CO之间的气体扩散性质的差异。少